A 0.7–7 GHz wideband RF receiver front-end So C is designed using the CMOS process. The front-end is composed of two main blocks: a single-ended wideband low noise amplifier（LNA） and an in-phase/quadrature（I/Q） v...A 0.7–7 GHz wideband RF receiver front-end So C is designed using the CMOS process. The front-end is composed of two main blocks: a single-ended wideband low noise amplifier（LNA） and an in-phase/quadrature（I/Q） voltage-driven passive mixer with IF amplifiers. Based on a self-biased resistive negative feedback topology,the LNA adopts shunt-peaking inductors and a gate inductor to boost the bandwidth. The passive down-conversion mixer includes two parts: passive switches and IF amplifiers. The measurement results show that the frontend works well at different LO frequencies, and this chip is reconfigurable among 0.7 to 7 GHz by tuning the LO frequency. The measured results under 2.5-GHz LO frequency show that the front-end SoC achieves a maximum conversion gain of 26 dB, a minimum noise figure（NF） of 3.2 dB, with an IF bandwidth of greater than 500 MHz.The chip area is 1.67 × 1.08 mm;.展开更多
A Ka-band sub-harmonically pumped resistive mixer （SHPRM） was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor （CMOS） technology. An area-effective asymmetric broadside c...A Ka-band sub-harmonically pumped resistive mixer （SHPRM） was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor （CMOS） technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance （balun） with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation （LO） signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of -15- -12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency （RF） bandwidth of 28 35 GHz. The in-band LO-intermediate freqency （IF）, RF-IF, and LO-RF isolations are better than 31, 34, and 36 dB, respectively. Besides, the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB, respectively. The measured input referred PIdB and 3rd-order inter-modulation intercept point （IIP3） are 0.5 and 10.5 dBm, respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm^2 including pads.展开更多
An integrated fully differential ultra-wideband CMOS RF front-end for 6-9 GHz is presented.A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF fr...An integrated fully differential ultra-wideband CMOS RF front-end for 6-9 GHz is presented.A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF front-end. The ESD protected chip is fabricated in a TSMC 0.13μm RF CMOS process and achieves a maximum voltage gain of 23-26 dB and a minimum voltage gain of 16-19 dB,an averaged total noise figure of 3.3-4.6 dB while operating in the high gain mode and an in-band IIP3 of-12.6 dBm while in the low gain mode.This RF front-end consumes 17 mA from a 1.2 V supply voltage.展开更多
文摘A 0.7–7 GHz wideband RF receiver front-end So C is designed using the CMOS process. The front-end is composed of two main blocks: a single-ended wideband low noise amplifier（LNA） and an in-phase/quadrature（I/Q） voltage-driven passive mixer with IF amplifiers. Based on a self-biased resistive negative feedback topology,the LNA adopts shunt-peaking inductors and a gate inductor to boost the bandwidth. The passive down-conversion mixer includes two parts: passive switches and IF amplifiers. The measurement results show that the frontend works well at different LO frequencies, and this chip is reconfigurable among 0.7 to 7 GHz by tuning the LO frequency. The measured results under 2.5-GHz LO frequency show that the front-end SoC achieves a maximum conversion gain of 26 dB, a minimum noise figure（NF） of 3.2 dB, with an IF bandwidth of greater than 500 MHz.The chip area is 1.67 × 1.08 mm;.
基金Project supported by the National Basic Research Program (973) of China (No. 2010CB327404)the National High-Tech R&D Program (863) of China (No. 2011AA10305)the National Natural Science Foundation of China (No. 60901012)
文摘A Ka-band sub-harmonically pumped resistive mixer （SHPRM） was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor （CMOS） technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance （balun） with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation （LO） signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of -15- -12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency （RF） bandwidth of 28 35 GHz. The in-band LO-intermediate freqency （IF）, RF-IF, and LO-RF isolations are better than 31, 34, and 36 dB, respectively. Besides, the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB, respectively. The measured input referred PIdB and 3rd-order inter-modulation intercept point （IIP3） are 0.5 and 10.5 dBm, respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm^2 including pads.
基金Project supported by the National Science & Technology Major Projects of China(Nos.2009ZX03006-007-01,2009ZX03007-001, 2009ZX03006-009)the National High Technology Research & Development Program of China(No.2009AA01Z261)
文摘An integrated fully differential ultra-wideband CMOS RF front-end for 6-9 GHz is presented.A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF front-end. The ESD protected chip is fabricated in a TSMC 0.13μm RF CMOS process and achieves a maximum voltage gain of 23-26 dB and a minimum voltage gain of 16-19 dB,an averaged total noise figure of 3.3-4.6 dB while operating in the high gain mode and an in-band IIP3 of-12.6 dBm while in the low gain mode.This RF front-end consumes 17 mA from a 1.2 V supply voltage.
