The resistivity of cement specimens mixed with carbon fibres under different pressures is studied. The results reveal that when pressure becomes larger and larger, the resistivity of speciments changes. The process ca...The resistivity of cement specimens mixed with carbon fibres under different pressures is studied. The results reveal that when pressure becomes larger and larger, the resistivity of speciments changes. The process can be di-vided into three stages; reversible sensing period, balance pe-riod, and sharp increasing period. These three periods re-spectively show the closure and opening of raw flaw in speci-mens , germination of fresh cracks and cracks extending to failure. The conducting mechanism is also analyzed. Ac-cording to the above characteristic of carbon fibre-cement specimen, it can be used as an intrinsic smart material to be ap-plied in the non-destructive detection of concrete dams,ect.展开更多
We synthesized the pure and indium-doped （IZO） ZnO films with a facile composition control spray pyrolysis route. The substrate temperature （Ts） and In-doping effects on the properties of as-grown films are inves-...We synthesized the pure and indium-doped （IZO） ZnO films with a facile composition control spray pyrolysis route. The substrate temperature （Ts） and In-doping effects on the properties of as-grown films are inves- tigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a （002） preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 ℃ Moreover, the morphol- ogy of as-grown films, analyzed by AFM, shows nanostructures that have grown along the c-axis. The （3 ×3 μm2） area scanned AFM surface studies give the smooth film surface RMS 〈 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV （ZnO） and 3.31 eV （IZO） and the resistivity is reduced from 385 to 8Ω·m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.展开更多
基金Funded by National Natural Science Fundation of China key project No 59432061
文摘The resistivity of cement specimens mixed with carbon fibres under different pressures is studied. The results reveal that when pressure becomes larger and larger, the resistivity of speciments changes. The process can be di-vided into three stages; reversible sensing period, balance pe-riod, and sharp increasing period. These three periods re-spectively show the closure and opening of raw flaw in speci-mens , germination of fresh cracks and cracks extending to failure. The conducting mechanism is also analyzed. Ac-cording to the above characteristic of carbon fibre-cement specimen, it can be used as an intrinsic smart material to be ap-plied in the non-destructive detection of concrete dams,ect.
基金a part of the CNEPRU project N° D01920120039 supported by the ministry of high teaching and scientific research MESRS www.mesrs.dz
文摘We synthesized the pure and indium-doped （IZO） ZnO films with a facile composition control spray pyrolysis route. The substrate temperature （Ts） and In-doping effects on the properties of as-grown films are inves- tigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a （002） preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 ℃ Moreover, the morphol- ogy of as-grown films, analyzed by AFM, shows nanostructures that have grown along the c-axis. The （3 ×3 μm2） area scanned AFM surface studies give the smooth film surface RMS 〈 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV （ZnO） and 3.31 eV （IZO） and the resistivity is reduced from 385 to 8Ω·m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.
