Using a unipolar pulse with the rise time and the pulse duration in the order of microsecond as the primary pulse, a nanosecond pulse with the repetitive frequency of several kilohertz is generated by a spark gap swit...Using a unipolar pulse with the rise time and the pulse duration in the order of microsecond as the primary pulse, a nanosecond pulse with the repetitive frequency of several kilohertz is generated by a spark gap switch. By varying both the inter-pulse duration and the pulse frequency, the voltage recovery rate of the spark gap switch is investigated at different working conditions such as the gas pressure, the gas composition as well as the bias voltage. The results reveal that either increase in gas pressure or addition of SF6 to the air can increase the voltage recovery rate. The effect of gas composition on the voltage recovery rate is discussed based on the transferring and distribution of the residual space charges. The repetitive nanosecond pulse source is also applied to the generation of large volume, and the discharge currents are measured to investigate the effect of pulse repetition rate on the large volume streamer discharge.展开更多
The temperature-dependent effect of residual charge carrier （no）, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor （GFET） using 7nm TiO2 as the top-gate ...The temperature-dependent effect of residual charge carrier （no）, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor （GFET） using 7nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of gOO cm^2 /V.s at room temperature and it decreases to 45 cm^2 /V.s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature.展开更多
基金National Natural Science Foundation of China(No.50477027)
文摘Using a unipolar pulse with the rise time and the pulse duration in the order of microsecond as the primary pulse, a nanosecond pulse with the repetitive frequency of several kilohertz is generated by a spark gap switch. By varying both the inter-pulse duration and the pulse frequency, the voltage recovery rate of the spark gap switch is investigated at different working conditions such as the gas pressure, the gas composition as well as the bias voltage. The results reveal that either increase in gas pressure or addition of SF6 to the air can increase the voltage recovery rate. The effect of gas composition on the voltage recovery rate is discussed based on the transferring and distribution of the residual space charges. The repetitive nanosecond pulse source is also applied to the generation of large volume, and the discharge currents are measured to investigate the effect of pulse repetition rate on the large volume streamer discharge.
文摘The temperature-dependent effect of residual charge carrier （no）, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor （GFET） using 7nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of gOO cm^2 /V.s at room temperature and it decreases to 45 cm^2 /V.s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature.
