The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste wer...The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing, the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.展开更多
采用化学溶液沉积法在ITO玻璃基片上制备铁酸铋Bi Fe O3薄膜。薄膜呈纯钙钛矿结构,无杂相生成。此外,薄膜表面光滑致密、没有微裂痕。薄膜得到的晶粒尺寸较小,约为45 nm。在550℃1 h退火的薄膜有良好的电学特性,在1 k Hz频率下测得的相...采用化学溶液沉积法在ITO玻璃基片上制备铁酸铋Bi Fe O3薄膜。薄膜呈纯钙钛矿结构,无杂相生成。此外,薄膜表面光滑致密、没有微裂痕。薄膜得到的晶粒尺寸较小,约为45 nm。在550℃1 h退火的薄膜有良好的电学特性,在1 k Hz频率下测得的相对介电常数、损耗因子分别约为198、3%;此外,在760 k V/cm电场驱动下,薄膜得到的剩余极化(2Pr)约为25μC/cm2,矫顽电场(2Ec)约为650 k V/cm。BFO薄膜在550℃退后,通过吸收光谱分析得到BFO薄膜的光学带隙为2.7 e V。这些结果表明,退火温度550℃制备的Bi Fe O3固溶体薄膜具有较好的性能,有望成为光电器件的候选材料。展开更多
在气体绝缘环网柜中使用环保的氮气或干燥空气取代SF6气体,又要保持紧凑和小巧的特点,必须要对环网柜绝缘结构进行优化设计。为此,就氮气的绝缘特性和氮气绝缘中压环网开关柜的典型绝缘结构（如间隙绝缘、复合绝缘、支撑绝缘子和穿墙套...在气体绝缘环网柜中使用环保的氮气或干燥空气取代SF6气体,又要保持紧凑和小巧的特点,必须要对环网柜绝缘结构进行优化设计。为此,就氮气的绝缘特性和氮气绝缘中压环网开关柜的典型绝缘结构（如间隙绝缘、复合绝缘、支撑绝缘子和穿墙套管沿面绝缘）的最大电场强度进行了分析研究。进而探索了降低氮气绝缘环网柜内电场强度的有效方法和途径：通过改善导体形状可降低气隙间电场不均匀系数至2~3;采用复合绝缘可降低氮气介质最大电场强度约20%;采用双断口结构和复合屏蔽绝缘,可实现工频耐受75 k V/1 min、雷电冲击耐受±145 k V的隔离断口绝缘水平;优化电极形状和绝缘体外形设计,可降低沿面绝缘破坏起始处电场强度,实现在工频耐受65 k V/1 min、雷电冲击耐受±125 k V的绝缘水平;通过电场屏蔽件的设计可降低局部电场集中,提高柜体整体绝缘水平。研制成功了符合IEC 62271-1和GB 11022标准绝缘水平要求的12~24 k V氮气绝缘环网柜（柜宽400 mm）并通过了型式试验,证明了环网柜采用氮气绝缘的可行性。展开更多
文摘The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing, the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.
文摘采用化学溶液沉积法在ITO玻璃基片上制备铁酸铋Bi Fe O3薄膜。薄膜呈纯钙钛矿结构,无杂相生成。此外,薄膜表面光滑致密、没有微裂痕。薄膜得到的晶粒尺寸较小,约为45 nm。在550℃1 h退火的薄膜有良好的电学特性,在1 k Hz频率下测得的相对介电常数、损耗因子分别约为198、3%;此外,在760 k V/cm电场驱动下,薄膜得到的剩余极化(2Pr)约为25μC/cm2,矫顽电场(2Ec)约为650 k V/cm。BFO薄膜在550℃退后,通过吸收光谱分析得到BFO薄膜的光学带隙为2.7 e V。这些结果表明,退火温度550℃制备的Bi Fe O3固溶体薄膜具有较好的性能,有望成为光电器件的候选材料。
文摘在气体绝缘环网柜中使用环保的氮气或干燥空气取代SF6气体,又要保持紧凑和小巧的特点,必须要对环网柜绝缘结构进行优化设计。为此,就氮气的绝缘特性和氮气绝缘中压环网开关柜的典型绝缘结构（如间隙绝缘、复合绝缘、支撑绝缘子和穿墙套管沿面绝缘）的最大电场强度进行了分析研究。进而探索了降低氮气绝缘环网柜内电场强度的有效方法和途径：通过改善导体形状可降低气隙间电场不均匀系数至2~3;采用复合绝缘可降低氮气介质最大电场强度约20%;采用双断口结构和复合屏蔽绝缘,可实现工频耐受75 k V/1 min、雷电冲击耐受±145 k V的隔离断口绝缘水平;优化电极形状和绝缘体外形设计,可降低沿面绝缘破坏起始处电场强度,实现在工频耐受65 k V/1 min、雷电冲击耐受±125 k V的绝缘水平;通过电场屏蔽件的设计可降低局部电场集中,提高柜体整体绝缘水平。研制成功了符合IEC 62271-1和GB 11022标准绝缘水平要求的12~24 k V氮气绝缘环网柜（柜宽400 mm）并通过了型式试验,证明了环网柜采用氮气绝缘的可行性。
