The mechanical properties of an austenite-based Fe-Mn-Al-C lightweight steel were improved by co-precipitation of nanoscale Cu-rich and κ-carbide particles.The Fe-28Mn-9Al-0.8C-(0,3)Cu (wt.%) strips were near-rapidly...The mechanical properties of an austenite-based Fe-Mn-Al-C lightweight steel were improved by co-precipitation of nanoscale Cu-rich and κ-carbide particles.The Fe-28Mn-9Al-0.8C-(0,3)Cu (wt.%) strips were near-rapidly solidified and annealed in the temperature range from 500 ℃ to 700 ℃.The microstructure evolution and mechanical properties of the steel under different annealing processes were studied.Microstructural analysis reveals that nanoscale κ-carbides and Cu-rich particles precipitate in the austenite and ferrite of the steel in this annealing temperature range.Co-precipitation of nanoscale Cu-rich particles and κ-carbides provides an obvious increment in the yield strength.At the annealing temperature of 600 ℃,both the yield strength and ultimate tensile strength of Fe-28Mn-9Al-0.8C-3Cu (wt.%) steel strip are the highest.The total elongation is 25%,which is obviously higher than that of Cu-free steel strips,for the addition of Cu reduces the large sized κ-carbides precipitated along austenite/ferrite interfaces.When the annealing temperature rises to 700 ℃,the strength and ductility of the two steel strips deteriorate due to the formation of massive intergranular κ-carbides precipitated along austenite/ferrite interfaces.It can be concluded that a proper co-precipitation of Cu-rich particles and κ-carbides would improve the properties of austenite-based Fe-Mn-Al-C steel.展开更多
Two-dimensional(2D)carbon nitride sheets(CNs)with atomically thin structures are regarded as one of the most promising materials for solar energy conversion.However,due to their substantially enlarged bandgap caused b...Two-dimensional(2D)carbon nitride sheets(CNs)with atomically thin structures are regarded as one of the most promising materials for solar energy conversion.However,due to their substantially enlarged bandgap caused by the strong quantum size effect and their incomplete polymerisation with a large number of non-condensed surface amino groups,the practical applicability of CNs in photocatalysis is limited.In this study,CNs with broad visible-light absorption were synthesised using a 5-min fast thermal annealing.The removal of uncondensed amine groups reduces the bandgap of CNs from 3.06 eV to 2.60 eV,increasing their absorption of visible light.Interestingly,the CNs were distorted after annealing,which can differentiate the spatial positions of electrons and holes,enhancing the visible-light absorption efficiency.As a result,when exposed to visible light,the photocatalytic hydrogen production activity of atomically thin 2D CNs rose by 8.38 times.This research presents a dependable and speedy method for creating highly effective visible-light photocatalysts with narrowed bandgaps and improved visible-light absorption.展开更多
The integration of electrochemical CO_(2)reduction(CO_(2)RR) and photoelectrochemical water oxidation offers a sustainable access to valuable chemicals and fuels. Here, we develop a rapidly annealed hematite photoanod...The integration of electrochemical CO_(2)reduction(CO_(2)RR) and photoelectrochemical water oxidation offers a sustainable access to valuable chemicals and fuels. Here, we develop a rapidly annealed hematite photoanode with a photocurrent density of 2.83 mA cm^(-2)at 1.7 VRHEto drive the full-reaction. We also present Cu-alloys electrocatalysis extended from CuInSnS4, which are superior in both activity and selectivity for CO_(2)RR. Specifically, the screened CuInSn achieves a CO_(2)to HCOOH Faradaic efficiency of 93% at a cell voltage of-2.0 V by assembling into artificial photosynthesis cell. The stability test of IT exhibits less than 3% degradation over 24 h. Furthermore, in-situ Raman spectroscopy reveals that both CO_(3)^(-2)and CO_(2)are involved in CO_(2)RR as reactants. The preferential affinity of C for H in the ^(*)HCO_(2)intermediate enables an improved HCOOH-selectivity, highlighting the role of multifunctional Cu in reducing the cell voltage and enhancing the photocurrent density.展开更多
The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃...The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.展开更多
CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with...CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.展开更多
Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal application...Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.展开更多
Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperatu...Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperature annealing,the phase of nickel-silicon compound can be observed with X-ray diffraction,and the contact resistance also changes.A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing.It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing,resulting in a better ohmic-contact characteristic.展开更多
The microstructure and mechanical properties of medium carbon steel after cyclic heat treatment were in- vestigated. The effects of cyclic numbers and long time annealing on the microstructure and mechanical propertie...The microstructure and mechanical properties of medium carbon steel after cyclic heat treatment were in- vestigated. The effects of cyclic numbers and long time annealing on the microstructure and mechanical properties of the experimental steel were compared. A short duration （5 min） holding at 1023 K （above A1 temperature） and a short-duration （3 min） holding at 893 K are adopted in each cyclic heat treatment. The spheroidization is accelerated during cyclic heat treatment, and the spheroidizing ratio grows with cyclic numbers. After 12-cycle heat treatments, there are few incompletely spheroidized regions in the specimens, and cementite lamellae mostly change into cement- ite particles. The morphological character of cementite for 12 cycles is similar to that undergoing annealing for 10 h at 973 K. The strength of the experimental steel after 5-cycle heat treatment is the lowest in the following cyclic heat treatment, but it is still higher than that of specimens with subcritical annealing over a long period （10 h）. After 12- cycle heat treatment, the strength of the experimental steel is close to that of the normalized steel, and the plasticity is the best in all heat treated specimens.展开更多
Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annea...Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annealing process to stabilize nitrogen‐mesoporous carbon supported Pd single‐atom/cluster(Pd/NMC)material,which provided a catalyst with superior performance for Suzuki coupling reactions.In comparison with commercial palladium/carbon(Pd/C)catalysts,the Pd/NMC catalyst exhibited significantly boosted activity(100%selectivity and 95%yield)and excellent stability(almost no decay in activity after 10 reuse cycles)for the Suzuki coupling reactions of chlorobenzenes,together with superior yield and excellent selectivity in the fields of the board scope of the reactants.Moreover,our newly developed rapid annealing process of precursor solutions is applied as a generalized method to stabilize metal clusters(e.g.Pd,Pt,Ru),opening new possibilities in the construction of efficient highly dispersed metal atom and sub‐nanometer cluster catalysts with high performance.展开更多
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the...The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.展开更多
基金financially supported by the National Natural Science Foundation of China(No.51974184)the National MCF Energy R&D Program of China(No.2018YFE0306102)。
文摘The mechanical properties of an austenite-based Fe-Mn-Al-C lightweight steel were improved by co-precipitation of nanoscale Cu-rich and κ-carbide particles.The Fe-28Mn-9Al-0.8C-(0,3)Cu (wt.%) strips were near-rapidly solidified and annealed in the temperature range from 500 ℃ to 700 ℃.The microstructure evolution and mechanical properties of the steel under different annealing processes were studied.Microstructural analysis reveals that nanoscale κ-carbides and Cu-rich particles precipitate in the austenite and ferrite of the steel in this annealing temperature range.Co-precipitation of nanoscale Cu-rich particles and κ-carbides provides an obvious increment in the yield strength.At the annealing temperature of 600 ℃,both the yield strength and ultimate tensile strength of Fe-28Mn-9Al-0.8C-3Cu (wt.%) steel strip are the highest.The total elongation is 25%,which is obviously higher than that of Cu-free steel strips,for the addition of Cu reduces the large sized κ-carbides precipitated along austenite/ferrite interfaces.When the annealing temperature rises to 700 ℃,the strength and ductility of the two steel strips deteriorate due to the formation of massive intergranular κ-carbides precipitated along austenite/ferrite interfaces.It can be concluded that a proper co-precipitation of Cu-rich particles and κ-carbides would improve the properties of austenite-based Fe-Mn-Al-C steel.
基金supported by the National Natural Science Foundation of China(Nos.12104352 and 12204294)Fundamental Research Funds for the Central Universities(Nos.XJS_(2)12208 and 2020BJ-56)+1 种基金Foundation of State Key Laboratory of High-efficiency Utilization of Coal and Green Chemical Engineering(No.2022-K67)the Natural Science Foundation of Shaanxi Province(Nos.2019JCW-17 and 2020JCW-15).
文摘Two-dimensional(2D)carbon nitride sheets(CNs)with atomically thin structures are regarded as one of the most promising materials for solar energy conversion.However,due to their substantially enlarged bandgap caused by the strong quantum size effect and their incomplete polymerisation with a large number of non-condensed surface amino groups,the practical applicability of CNs in photocatalysis is limited.In this study,CNs with broad visible-light absorption were synthesised using a 5-min fast thermal annealing.The removal of uncondensed amine groups reduces the bandgap of CNs from 3.06 eV to 2.60 eV,increasing their absorption of visible light.Interestingly,the CNs were distorted after annealing,which can differentiate the spatial positions of electrons and holes,enhancing the visible-light absorption efficiency.As a result,when exposed to visible light,the photocatalytic hydrogen production activity of atomically thin 2D CNs rose by 8.38 times.This research presents a dependable and speedy method for creating highly effective visible-light photocatalysts with narrowed bandgaps and improved visible-light absorption.
基金financially supported by the National Key R&D Program of China (2018YFE0208500)the National Natural Science Foundation of China (Grants No. 22072022)funded by King Abdullah University of Science and Technology (KAUST) through the baseline funding (BAS/1/1413-01-01)。
文摘The integration of electrochemical CO_(2)reduction(CO_(2)RR) and photoelectrochemical water oxidation offers a sustainable access to valuable chemicals and fuels. Here, we develop a rapidly annealed hematite photoanode with a photocurrent density of 2.83 mA cm^(-2)at 1.7 VRHEto drive the full-reaction. We also present Cu-alloys electrocatalysis extended from CuInSnS4, which are superior in both activity and selectivity for CO_(2)RR. Specifically, the screened CuInSn achieves a CO_(2)to HCOOH Faradaic efficiency of 93% at a cell voltage of-2.0 V by assembling into artificial photosynthesis cell. The stability test of IT exhibits less than 3% degradation over 24 h. Furthermore, in-situ Raman spectroscopy reveals that both CO_(3)^(-2)and CO_(2)are involved in CO_(2)RR as reactants. The preferential affinity of C for H in the ^(*)HCO_(2)intermediate enables an improved HCOOH-selectivity, highlighting the role of multifunctional Cu in reducing the cell voltage and enhancing the photocurrent density.
文摘The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.
基金the financial support of the National Natural Science Foundation of China(Grant Nos.51772175 and 51872166)the Nano Projects of Suzhou City(Grant No.ZXG201445)+2 种基金the support from the Seed Funding for Top Talents in Qilu University of Technology(Shandong Academy of Sciences)the International Cooperation Research Project of Qilu University of Technology(Grant No.QLUTGJHZ2018003)the Independent Innovation Foundation of Shandong University(Grant Nos.2018JC045 and 2017ZD008).
文摘CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.
基金Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404)part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009)+4 种基金the Key R&D Program of Guangzhou (Grant No.202103020002)Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT)the Fundamental Research Funds for the Central Universities (Grant No.XJS221110)the Natural Science Foundation of Shaanxi,China (Grant No.2022JM-377)the Innovation Fund of Xidian University (Grant No.YJSJ23019)。
文摘Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.
基金supported by Shenzhen Science and Technology Program(Grant No.KQTD2017033016491218).
文摘Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperature annealing,the phase of nickel-silicon compound can be observed with X-ray diffraction,and the contact resistance also changes.A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing.It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing,resulting in a better ohmic-contact characteristic.
基金Item Sponsored by National Natural Science Foundation of China(51101137,51171161)
文摘The microstructure and mechanical properties of medium carbon steel after cyclic heat treatment were in- vestigated. The effects of cyclic numbers and long time annealing on the microstructure and mechanical properties of the experimental steel were compared. A short duration （5 min） holding at 1023 K （above A1 temperature） and a short-duration （3 min） holding at 893 K are adopted in each cyclic heat treatment. The spheroidization is accelerated during cyclic heat treatment, and the spheroidizing ratio grows with cyclic numbers. After 12-cycle heat treatments, there are few incompletely spheroidized regions in the specimens, and cementite lamellae mostly change into cement- ite particles. The morphological character of cementite for 12 cycles is similar to that undergoing annealing for 10 h at 973 K. The strength of the experimental steel after 5-cycle heat treatment is the lowest in the following cyclic heat treatment, but it is still higher than that of specimens with subcritical annealing over a long period （10 h）. After 12- cycle heat treatment, the strength of the experimental steel is close to that of the normalized steel, and the plasticity is the best in all heat treated specimens.
文摘Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annealing process to stabilize nitrogen‐mesoporous carbon supported Pd single‐atom/cluster(Pd/NMC)material,which provided a catalyst with superior performance for Suzuki coupling reactions.In comparison with commercial palladium/carbon(Pd/C)catalysts,the Pd/NMC catalyst exhibited significantly boosted activity(100%selectivity and 95%yield)and excellent stability(almost no decay in activity after 10 reuse cycles)for the Suzuki coupling reactions of chlorobenzenes,together with superior yield and excellent selectivity in the fields of the board scope of the reactants.Moreover,our newly developed rapid annealing process of precursor solutions is applied as a generalized method to stabilize metal clusters(e.g.Pd,Pt,Ru),opening new possibilities in the construction of efficient highly dispersed metal atom and sub‐nanometer cluster catalysts with high performance.
基金supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.
