Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes （SCH LDs） has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quan...Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes （SCH LDs） has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well （QW）, an A1GaAs interlayer with a smaller A1 component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the A1GaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61377020,61376089,61223005,61176126)the National Science Fund for Distinguished Young Scholars(No.60925017)
文摘Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes （SCH LDs） has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well （QW）, an A1GaAs interlayer with a smaller A1 component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the A1GaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.
