Zero-energy topological states,which are protected by chiral symmetry against certain perturbations topologically,localize at interfaces between trivial and non-trivial phases in the Su–Schrieffer–Heeger(SSH)chain m...Zero-energy topological states,which are protected by chiral symmetry against certain perturbations topologically,localize at interfaces between trivial and non-trivial phases in the Su–Schrieffer–Heeger(SSH)chain model.Here,we propose and demonstrate a method to manipulate chiral symmetry itself to improve the localized interfaces and enlarge the mode volume of topological states in the SSH model,thus optimizing the lasing performance of localized interfaces.As multiple defects corresponding to off-diagonal perturbations in an eigenmatrix are introduced,the topological state expands and extends to extra defects at the topological interface without breaking chiral symmetry.We apply the proposed method in electrical pumping semiconductor laser arrays to verify our theoretical prediction and optimize the output characteristics of the devices.The measured results of the proposed multi-defect SSH laser array show that the output power has been increased by 27%,and the series resistance and far-field divergence have been reduced by half compared to the traditional SSH laser array,establishing a high-performance light source for integrated silicon photonics,infrared light detection and ranging,and so on.Our work demonstrates that the proposed method is capable of improving topological localized interfaces and redistributing zero-energy topological states.Furthermore,our method can be applied to other platforms and inspire optimizations of more devices in broader areas.展开更多
It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of th...It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.展开更多
基金National Key Research and Development Program of China(2021YFA1400604,2021YFB2801400)National Natural Science Foundation of China(62075213,62135001,62205328,91850206)。
文摘Zero-energy topological states,which are protected by chiral symmetry against certain perturbations topologically,localize at interfaces between trivial and non-trivial phases in the Su–Schrieffer–Heeger(SSH)chain model.Here,we propose and demonstrate a method to manipulate chiral symmetry itself to improve the localized interfaces and enlarge the mode volume of topological states in the SSH model,thus optimizing the lasing performance of localized interfaces.As multiple defects corresponding to off-diagonal perturbations in an eigenmatrix are introduced,the topological state expands and extends to extra defects at the topological interface without breaking chiral symmetry.We apply the proposed method in electrical pumping semiconductor laser arrays to verify our theoretical prediction and optimize the output characteristics of the devices.The measured results of the proposed multi-defect SSH laser array show that the output power has been increased by 27%,and the series resistance and far-field divergence have been reduced by half compared to the traditional SSH laser array,establishing a high-performance light source for integrated silicon photonics,infrared light detection and ranging,and so on.Our work demonstrates that the proposed method is capable of improving topological localized interfaces and redistributing zero-energy topological states.Furthermore,our method can be applied to other platforms and inspire optimizations of more devices in broader areas.
文摘It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.
