New electron donors with hydroxyl groups were synthesized and characterized spectroscopically. Their redox potentials were determined with cyclic voltammetry, and the comparison with BEDT-TTF [Bis(ethylenedithio)tetra...New electron donors with hydroxyl groups were synthesized and characterized spectroscopically. Their redox potentials were determined with cyclic voltammetry, and the comparison with BEDT-TTF [Bis(ethylenedithio)tetrathiafulvalene] in this aspect was made. These results indicated that the new electron donors had similar electron-donating capabilities as BEDT-TTF.展开更多
H10TTPR was prepared starting from terephthalaldehyde and characterized. Crystal structure of H10TTPR and an intermediate compound 11 were determined by X-ray diffraction analysis. A quasi-reversible redox wave at 1.1...H10TTPR was prepared starting from terephthalaldehyde and characterized. Crystal structure of H10TTPR and an intermediate compound 11 were determined by X-ray diffraction analysis. A quasi-reversible redox wave at 1.15 V (vs. SCE) was observed for H10TTPR, indicating that it is a weak electron donor.展开更多
The behavior of a donor in the GaAs–GaAlAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calcula...The behavior of a donor in the GaAs–GaAlAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters(De, re, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.展开更多
This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH,as well as the estimation of the passive film thickness as a...This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH,as well as the estimation of the passive film thickness as a function of the film formation potential.Mott-Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics,where the oxygen vacancies and interstitials preponderated.Based on the Mott-Schottky analysis,it was shown that the calculated donor density increases linearly with increasing the formation potential.Also,the electrochemical impedance spectroscopy(EIS)results indicated that the thickness of the passive film was decreased linearly with increasing the formation potential.The results showed that decreasing the formation potential offer better conditions for forming the passive films with higher protection behavior,due to the growth of a much thicker and less defective films.展开更多
基金the Chinese Academy of Sciences(KJ951-A1-501-03)
文摘New electron donors with hydroxyl groups were synthesized and characterized spectroscopically. Their redox potentials were determined with cyclic voltammetry, and the comparison with BEDT-TTF [Bis(ethylenedithio)tetrathiafulvalene] in this aspect was made. These results indicated that the new electron donors had similar electron-donating capabilities as BEDT-TTF.
基金Project supported by National Natural Science Foundation of China (No. 90101025) Chinese Academy of Sciences and State Key Basic Research Program (No. G2000077505) and National Science Fund for Distinguished Young Scholars..
文摘H10TTPR was prepared starting from terephthalaldehyde and characterized. Crystal structure of H10TTPR and an intermediate compound 11 were determined by X-ray diffraction analysis. A quasi-reversible redox wave at 1.15 V (vs. SCE) was observed for H10TTPR, indicating that it is a weak electron donor.
基金supported by the Turkish Science Research Council(TBTAK)the Financial Supports from Akdeniz and Nigde Universities
文摘The behavior of a donor in the GaAs–GaAlAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters(De, re, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.
文摘This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH,as well as the estimation of the passive film thickness as a function of the film formation potential.Mott-Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics,where the oxygen vacancies and interstitials preponderated.Based on the Mott-Schottky analysis,it was shown that the calculated donor density increases linearly with increasing the formation potential.Also,the electrochemical impedance spectroscopy(EIS)results indicated that the thickness of the passive film was decreased linearly with increasing the formation potential.The results showed that decreasing the formation potential offer better conditions for forming the passive films with higher protection behavior,due to the growth of a much thicker and less defective films.
