Eu-doped Ca-α-SiAlON yellow phosphors, with the compositions Ca0.72Eu0.08Si9.56Al2.44O0.84N15.16, were prepared by a highly efficient combustion synthesis method. By optimizing the starting compositions of reactants ...Eu-doped Ca-α-SiAlON yellow phosphors, with the compositions Ca0.72Eu0.08Si9.56Al2.44O0.84N15.16, were prepared by a highly efficient combustion synthesis method. By optimizing the starting compositions of reactants and choosing appropriate post-annealing conditions, phase-pure, uniform and fine Ca-α-sialon：Eu2＋ phosphors possessing the particle size ranging -3-5μm, and good luminescence properties with an intense emission band that peaks at 592 nm under n-UV or blue light excitation were ob-tained. The results indicated that combustion synthesis method was an energy efficient, time saving and low cost way to prepare Ca-α-SiAlON phosphors by controlling the mass ratio of comburents. A combination with post-annealing treatment was desired for further increase of the properties of Ca-α-SiAlON phosphors.展开更多
In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat...In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.展开更多
基金Project supported by the National Natural Science Foundation of China(51302311)the National High Technology Research and Development Program of China(2009AA03Z211)
文摘Eu-doped Ca-α-SiAlON yellow phosphors, with the compositions Ca0.72Eu0.08Si9.56Al2.44O0.84N15.16, were prepared by a highly efficient combustion synthesis method. By optimizing the starting compositions of reactants and choosing appropriate post-annealing conditions, phase-pure, uniform and fine Ca-α-sialon：Eu2＋ phosphors possessing the particle size ranging -3-5μm, and good luminescence properties with an intense emission band that peaks at 592 nm under n-UV or blue light excitation were ob-tained. The results indicated that combustion synthesis method was an energy efficient, time saving and low cost way to prepare Ca-α-SiAlON phosphors by controlling the mass ratio of comburents. A combination with post-annealing treatment was desired for further increase of the properties of Ca-α-SiAlON phosphors.
基金Supported by National Natural Science Foundation of China(61106064)Science and Technology Commission of Shanghai Municipality Project(11ZR1411400,10JC1404600)
基金Project supported in part by the National Basic Research Program of China(Grant Nos.2010CB934200 and 2011CBA00600)the National Natural Science Foundation of China(Grant Nos.61176073 and 61176080)the Director’s Fund of the Institute of Microelectronics,Chinese Academy of Sciences
文摘In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.
