Surface passivation methods for porous Si (PS) surfaces, i.e., depositing diamond film or diamond-like carbon (DLC) film on PS surfaces, were attempted. Two emission bands, weak blue band and strong red band existed i...Surface passivation methods for porous Si (PS) surfaces, i.e., depositing diamond film or diamond-like carbon (DLC) film on PS surfaces, were attempted. Two emission bands, weak blue band and strong red band existed in the PL spectrum of diamond film coated on PS, were discovered by the photoluminescence measurements. The luminescent mechanism and stability were discussed. The results indicated that diamond film may stabilize the PL wavelength and intensity of PS, and therefore could become a promising passivation film of porous Si. The PL properties of PS coated by DLC films, including hydrogenated diamond like carbon (DLC:H) film and nitrogen doped DLC film (DLC:N) were also studied in this paper. The DLC films may stabilize the PL of PS, but the photoluminescent intensity was obviously weaker than that of diamond film coated PS.展开更多
ZnS films were deposited on porous Si （PS） substrates using a pulsed laser deposition （PLD） technique. White light emission is observed in photoluminescence （PL） spectra, and the white light is the combination o...ZnS films were deposited on porous Si （PS） substrates using a pulsed laser deposition （PLD） technique. White light emission is observed in photoluminescence （PL） spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nrn. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.展开更多
he photoluminescence spectra of porous Si have been studied. Its timere-solved luminescence spectra show a red shift of luminescencc peak with increasingdelay time after exciting and a nonexponential decay. Several sp...he photoluminescence spectra of porous Si have been studied. Its timere-solved luminescence spectra show a red shift of luminescencc peak with increasingdelay time after exciting and a nonexponential decay. Several spectral bands withdifferent Gaussian center appear by means of the decomposition of a spetrum. Theresuits of our experiments show quantum confined characters in porous Si, and wespeculate that the short wavelength band at 465 nm is the direct band froni P_(15) toP_(25)展开更多
N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostru...N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.展开更多
基金This work was financially supported by the National Natural Science Foundation of China(Grant No.60277024)Rising Star Project of Shanghai(No.02QE14018)Shanghai Foundation of Applied Materials Research&Development(0307).
文摘Surface passivation methods for porous Si (PS) surfaces, i.e., depositing diamond film or diamond-like carbon (DLC) film on PS surfaces, were attempted. Two emission bands, weak blue band and strong red band existed in the PL spectrum of diamond film coated on PS, were discovered by the photoluminescence measurements. The luminescent mechanism and stability were discussed. The results indicated that diamond film may stabilize the PL wavelength and intensity of PS, and therefore could become a promising passivation film of porous Si. The PL properties of PS coated by DLC films, including hydrogenated diamond like carbon (DLC:H) film and nitrogen doped DLC film (DLC:N) were also studied in this paper. The DLC films may stabilize the PL of PS, but the photoluminescent intensity was obviously weaker than that of diamond film coated PS.
基金supported by the Natural Science Foundation of Shandong Province of China(No.Y2002A09)the Research Foundation for Young Scientists in Innovation Engineering of Binzhou University,China(No.BZXYQNLG200703).
文摘ZnS films were deposited on porous Si （PS） substrates using a pulsed laser deposition （PLD） technique. White light emission is observed in photoluminescence （PL） spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nrn. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.
文摘he photoluminescence spectra of porous Si have been studied. Its timere-solved luminescence spectra show a red shift of luminescencc peak with increasingdelay time after exciting and a nonexponential decay. Several spectral bands withdifferent Gaussian center appear by means of the decomposition of a spetrum. Theresuits of our experiments show quantum confined characters in porous Si, and wespeculate that the short wavelength band at 465 nm is the direct band froni P_(15) toP_(25)
基金supported by the National Natural Science Foundation of China(50671042)the Ph.D.Innovation Programs Foundation of Jiangsu Province(CXZZ12_0671)
文摘N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.
