We measured the resonant Raman spectra of all-trans-β-carotene in solvents with different densities and concentrations at different temperatures. The results demonstrated that the Raman scattering cross section （RSC...We measured the resonant Raman spectra of all-trans-β-carotene in solvents with different densities and concentrations at different temperatures. The results demonstrated that the Raman scattering cross section （RSCS） of short-chain polymer all-trans-β-carotene is extremely high in liquid. Resonance and strong coherent weakly damped CC bond vibrating properties play important roles under these conditions. Coherent weakly damped CC bond vibration strength is associated with molecular ordered structure. All-trans-β-carotene has highly ordered structure and strong coherent weakly damped CC bond vibrating properties, which lead to large RSCS in the solvent with large density and low concentration at low temperature.展开更多
Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromo...Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years.In this paper,organic resistive switching memory(ORSM)based on(Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA)and polymer poly(N-vinylcarbazole)(PVK)composite film was prepared by spin-coating method.Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated.The ORSM based on PVK:40%(mass fraction)NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff)of 24.1,endurance of 68 times and retention time of 104 s,a“SET”voltage(Vset)of−0.55 V and a“RESET”voltage(Vreset)of 2.35 V.The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk.The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias,which caused the transforming of the conductive way of charges,that is the resistive behaviors in the macroscopic.This study provides a promising platform for the fabrication of ORSM with high performance.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 10774057 and 10974067)the Graduate Innovation Fund of Jilin University,China (Grant No. 20101046)
文摘We measured the resonant Raman spectra of all-trans-β-carotene in solvents with different densities and concentrations at different temperatures. The results demonstrated that the Raman scattering cross section （RSCS） of short-chain polymer all-trans-β-carotene is extremely high in liquid. Resonance and strong coherent weakly damped CC bond vibrating properties play important roles under these conditions. Coherent weakly damped CC bond vibration strength is associated with molecular ordered structure. All-trans-β-carotene has highly ordered structure and strong coherent weakly damped CC bond vibrating properties, which lead to large RSCS in the solvent with large density and low concentration at low temperature.
基金supported by the Ji Hua Laboratory Science Program,China (No.X190251UZ190)the Foundation of Shanxi Datong University Doctoral Research,the Graduate Education Innovation Project of Shanxi Province,China (No.2022Y761)the Graduate Education Innovation Project of Shanxi Datong University,China (Nos.22CX02,22CX16).
文摘Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years.In this paper,organic resistive switching memory(ORSM)based on(Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA)and polymer poly(N-vinylcarbazole)(PVK)composite film was prepared by spin-coating method.Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated.The ORSM based on PVK:40%(mass fraction)NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff)of 24.1,endurance of 68 times and retention time of 104 s,a“SET”voltage(Vset)of−0.55 V and a“RESET”voltage(Vreset)of 2.35 V.The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk.The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias,which caused the transforming of the conductive way of charges,that is the resistive behaviors in the macroscopic.This study provides a promising platform for the fabrication of ORSM with high performance.
