For several decades,chemical mechanical polishing(CMP)has been the most widely used planarization method in integrated circuits manufacturing.The final polishing results are affected by many factors related to the car...For several decades,chemical mechanical polishing(CMP)has been the most widely used planarization method in integrated circuits manufacturing.The final polishing results are affected by many factors related to the carrier structure,the polishing pad,the slurry,and the process parameters.As both chemical and mechanical actions affect the effectiveness of CMP,and these actions are themselves affected by many factors,the CMP mechanism is complex and has been a hot research area for many years.This review provides a basic description of the development,challenges,and key technologies associated with CMP.We summarize theoretical CMP models from the perspectives of kinematics,empirical,its mechanism(from the viewpoint of the atomic scale,particle scale,and wafer scale),and its chemical-mechanical synergy.Experimental approaches to the CMP mechanism of material removal and planarization are further discussed from the viewpoint of the particle wear effect,chemical-mechanical synergy,and wafer-pad interfacial interaction.展开更多
In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two s...In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.展开更多
The roughness of the contact surface exerts a vital role in rubbing.It is still a significant challenge to understand the microscopic contact of the rough surface at the atomic level.Herein,the rough surface with a sp...The roughness of the contact surface exerts a vital role in rubbing.It is still a significant challenge to understand the microscopic contact of the rough surface at the atomic level.Herein,the rough surface with a special root mean square(RMS)value is constructed by multivariate Weierstrass–Mandelbrot(W–M)function and the rubbing process during that the chemical mechanical polishing(CMP)process of diamond is mimicked utilizing the reactive force field molecular dynamics(ReaxFF MD)simulation.It is found that the contact area A/A0 is positively related with the load,and the friction force F depends on the number of interfacial bridge bonds.Increasing the surface roughness will increase the friction force and friction coefficient.The model with low roughness and high lubrication has less friction force,and the presence of polishing liquid molecules can decrease the friction force and friction coefficient.The RMS value and the degree of damage show a functional relationship with the applied load and lubrication,i.e.,the RMS value decreases more under larger load and higher lubrication,and the diamond substrate occurs severer damage under larger load and lower lubrication.This work will generate fresh insight into the understanding of the microscopic contact of the rough surface at the atomic level.展开更多
The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing(CMP)process cannot be ignored.In this study,the material removal mechanism of cavitation in the polishi...The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing(CMP)process cannot be ignored.In this study,the material removal mechanism of cavitation in the polishing process was investigated in detail.Based on the mixed lubrication or thin film lubrication,bubble-wafer plastic deformation,spherical indentation theory,Johnson-Cook(J-C)constitutive model,and the assumption of periodic distribution of pad asperities,a new model suitable for micro-nano bubble auxiliary material removal in CMP was developed.The model integrates many parameters,including the reactant concentration,wafer hardness,polishing pad roughness,strain hardening,strain rate,micro-jet radius,and bubble radius.The model reflects the influence of active bubbles on material removal.A new and simple chemical reaction method was used to form a controllable number of micro-nano bubbles during the polishing process to assist in polishing silicon oxide wafers.The experimental results show that micro-nano bubbles can greatly increase the material removal rate(MRR)by about 400%and result in a lower surface roughness of 0.17 nm.The experimental results are consistent with the established model.In the process of verifying the model,a better understanding of the material removal mechanism involved in micro-nano bubbles in CMP was obtained.展开更多
Current three-body abrasive wear theories are based on a macroscale abrasive indentation process,and these theories claim that material wear cannot be achieved without damaging the hard mating surface.In this study,th...Current three-body abrasive wear theories are based on a macroscale abrasive indentation process,and these theories claim that material wear cannot be achieved without damaging the hard mating surface.In this study,the process of three-body nano-abrasive wear of a system including a single crystalline silicon substrate,an amorphous silica cluster,and a polyurethane pad,based on a chemical mechanical polishing(CMP)process,is investigated via molecular dynamics simulations.The cluster slid in a suspended state in smooth regions and underwent rolling impact in the asperity regions of the silicon surface,realizing non-damaging monoatomic material removal.This proves that indentation-plowing is not necessary when performing CMP material removal.Therefore,a non-indentation rolling-sliding adhesion theory for three-body nano-abrasive wear between ultrasoft/hard mating surfaces is proposed.This wear theory not only unifies current mainstream CMP material removal theories,but also clarifies that monoatomic material wear without damage can be realized when the indentation depth is less than zero,thereby perfecting the relationship between material wear and surface damage.These results provide new understanding regarding the CMP microscopic material removal mechanism as well as new research avenues for three-body abrasive wear theory at the monoatomic scale.展开更多
Ce^(3+)as the active site on the CeO_(2)abrasive surface is the key to enhancing the material removal rate(MRR).The CeO_(2)abrasives with high chemical activity were prepared by the molten salt method under a reducing...Ce^(3+)as the active site on the CeO_(2)abrasive surface is the key to enhancing the material removal rate(MRR).The CeO_(2)abrasives with high chemical activity were prepared by the molten salt method under a reducing atmosphere.The crystal structure and morphology of CeO_(2)abrasive s were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscopy(TEM),Fourier transform infrared spectroscopy(FT-IR),ultraviolet—visible diffuse reflectance spectroscopy(UV-Vis DRS),and X-ray photoelectron spectroscopy(XPS).The CeO_(2)abrasives were obtained under different atmospheres(Air,Ar,and Ar/H_(2)).With the enhancement of the reducing atmosphere,the morphology of the abrasives transforms from spherical to octahedral,while more oxygen vacancies and Ce^(3+)are generated on the surface of CeO_(2)abrasives.The CMP experiments show that the MRRs of the CeO_(2)-Air,CeO_(2)-Ar,and CeO_(2)-Ar/H_(2)abrasives on SiO_(2)substrates are 337.60,578.74,and 691.28 nm/min,respectively.Moreover,as confirmed by atomic force microscopy(AFM),the substrate surfaces exhibit low roughness(20.5 nm)after being polished using all of the prepared samples.Especially,the MRR of CeO_(2)-Ar/H_(2)abrasives is increased by 104.76%compared with CeO_(2)-air abrasives.The improved CMP performance is attributed to the increased Ce^(3+)concentration and the octahedral morphology of the abrasives enhancing the chemical reaction and mechanical removal at the abrasive-substrate interface.展开更多
Ethylenediamine with two-NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing(CMP)slurries for a high carbon chromium GCr15 bearing steel(equivalent to AISI 52100).The polishi...Ethylenediamine with two-NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing(CMP)slurries for a high carbon chromium GCr15 bearing steel(equivalent to AISI 52100).The polishing performance and corresponding mechanism of-NH2 functional groups were thoroughly investigated as a function of pH.It is revealed that,when polished with ethylenediamine and H2O2-based slurries,the material removal rate(MRR)and surface roughness Ra of GCr15 steel gradually decrease as pH increases.Compared with acidic pH of 4.0,at alkaline pH of 10.0,the surface film of GCr15 steel has much higher corrosion resistance and wear resistance,and thus the material removal caused by the pure corrosion and corrosion-enhanced wear are greatly inhibited,resulting in much lower MRR and Ra.Moreover,it is confirmed that a more protective composite film,consisting of more Fe3+hydroxides/oxyhydroxides and complex compounds with-NH2 functional groups of ethylenediamine,can be formed at pH of 10.0.Additionally,the polishing performance of pure iron and a medium carbon 45 steel exhibits a similar trend as GCr15 steel.The findings suggest that acidic pH could be feasible for amine groups-based complexing agents to achieve efficient CMP of iron-based metals.展开更多
基金support provided by the Science Fund for Creative Research Groups(Grant No.51021064)the National Natural Science Foundation of China(Grant No.51305227)。
文摘For several decades,chemical mechanical polishing(CMP)has been the most widely used planarization method in integrated circuits manufacturing.The final polishing results are affected by many factors related to the carrier structure,the polishing pad,the slurry,and the process parameters.As both chemical and mechanical actions affect the effectiveness of CMP,and these actions are themselves affected by many factors,the CMP mechanism is complex and has been a hot research area for many years.This review provides a basic description of the development,challenges,and key technologies associated with CMP.We summarize theoretical CMP models from the perspectives of kinematics,empirical,its mechanism(from the viewpoint of the atomic scale,particle scale,and wafer scale),and its chemical-mechanical synergy.Experimental approaches to the CMP mechanism of material removal and planarization are further discussed from the viewpoint of the particle wear effect,chemical-mechanical synergy,and wafer-pad interfacial interaction.
基金This project is supported by National Basic Research Program of China (973 Program, N0.2003CB716201)National Natural Science Foundation of China (No.50575131)Science Foundation of Shanghai Municipal Commission of Science and Technology, China(No.0452nm013).
文摘In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.
基金the National Key R&D Program of China(2022YFB3404304)the National Natural Science Foundation of China(No.5217052183).
文摘The roughness of the contact surface exerts a vital role in rubbing.It is still a significant challenge to understand the microscopic contact of the rough surface at the atomic level.Herein,the rough surface with a special root mean square(RMS)value is constructed by multivariate Weierstrass–Mandelbrot(W–M)function and the rubbing process during that the chemical mechanical polishing(CMP)process of diamond is mimicked utilizing the reactive force field molecular dynamics(ReaxFF MD)simulation.It is found that the contact area A/A0 is positively related with the load,and the friction force F depends on the number of interfacial bridge bonds.Increasing the surface roughness will increase the friction force and friction coefficient.The model with low roughness and high lubrication has less friction force,and the presence of polishing liquid molecules can decrease the friction force and friction coefficient.The RMS value and the degree of damage show a functional relationship with the applied load and lubrication,i.e.,the RMS value decreases more under larger load and higher lubrication,and the diamond substrate occurs severer damage under larger load and lower lubrication.This work will generate fresh insight into the understanding of the microscopic contact of the rough surface at the atomic level.
基金supported by the National Natural Science Foundation of China(No.51975343)Science and Technology Major Project of Inner Mongolia Autonomous Region in China(No.2021ZD0028)+1 种基金Shanghai Technical Service Center for Advanced Ceramics Structure Design and Precision Manufacturing(No.20DZ2294000)the China Scholarship Council.
文摘The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing(CMP)process cannot be ignored.In this study,the material removal mechanism of cavitation in the polishing process was investigated in detail.Based on the mixed lubrication or thin film lubrication,bubble-wafer plastic deformation,spherical indentation theory,Johnson-Cook(J-C)constitutive model,and the assumption of periodic distribution of pad asperities,a new model suitable for micro-nano bubble auxiliary material removal in CMP was developed.The model integrates many parameters,including the reactant concentration,wafer hardness,polishing pad roughness,strain hardening,strain rate,micro-jet radius,and bubble radius.The model reflects the influence of active bubbles on material removal.A new and simple chemical reaction method was used to form a controllable number of micro-nano bubbles during the polishing process to assist in polishing silicon oxide wafers.The experimental results show that micro-nano bubbles can greatly increase the material removal rate(MRR)by about 400%and result in a lower surface roughness of 0.17 nm.The experimental results are consistent with the established model.In the process of verifying the model,a better understanding of the material removal mechanism involved in micro-nano bubbles in CMP was obtained.
基金This work was supported by the National Natural Science Foundation of China(Nos.51375291 and 91323302)the Natural Science Foundation of Shanghai(No.19ZR1401500).
文摘Current three-body abrasive wear theories are based on a macroscale abrasive indentation process,and these theories claim that material wear cannot be achieved without damaging the hard mating surface.In this study,the process of three-body nano-abrasive wear of a system including a single crystalline silicon substrate,an amorphous silica cluster,and a polyurethane pad,based on a chemical mechanical polishing(CMP)process,is investigated via molecular dynamics simulations.The cluster slid in a suspended state in smooth regions and underwent rolling impact in the asperity regions of the silicon surface,realizing non-damaging monoatomic material removal.This proves that indentation-plowing is not necessary when performing CMP material removal.Therefore,a non-indentation rolling-sliding adhesion theory for three-body nano-abrasive wear between ultrasoft/hard mating surfaces is proposed.This wear theory not only unifies current mainstream CMP material removal theories,but also clarifies that monoatomic material wear without damage can be realized when the indentation depth is less than zero,thereby perfecting the relationship between material wear and surface damage.These results provide new understanding regarding the CMP microscopic material removal mechanism as well as new research avenues for three-body abrasive wear theory at the monoatomic scale.
基金the National Natural Science Foundation of China(51905324)the Scientific Research Program Funded by Shaanxi Provincial Education Department(20JK0545)the Doctoral Scientific Research Startup Foundation of Shaanxi University of Science and Technology(2018BJ-14)。
文摘Ce^(3+)as the active site on the CeO_(2)abrasive surface is the key to enhancing the material removal rate(MRR).The CeO_(2)abrasives with high chemical activity were prepared by the molten salt method under a reducing atmosphere.The crystal structure and morphology of CeO_(2)abrasive s were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscopy(TEM),Fourier transform infrared spectroscopy(FT-IR),ultraviolet—visible diffuse reflectance spectroscopy(UV-Vis DRS),and X-ray photoelectron spectroscopy(XPS).The CeO_(2)abrasives were obtained under different atmospheres(Air,Ar,and Ar/H_(2)).With the enhancement of the reducing atmosphere,the morphology of the abrasives transforms from spherical to octahedral,while more oxygen vacancies and Ce^(3+)are generated on the surface of CeO_(2)abrasives.The CMP experiments show that the MRRs of the CeO_(2)-Air,CeO_(2)-Ar,and CeO_(2)-Ar/H_(2)abrasives on SiO_(2)substrates are 337.60,578.74,and 691.28 nm/min,respectively.Moreover,as confirmed by atomic force microscopy(AFM),the substrate surfaces exhibit low roughness(20.5 nm)after being polished using all of the prepared samples.Especially,the MRR of CeO_(2)-Ar/H_(2)abrasives is increased by 104.76%compared with CeO_(2)-air abrasives.The improved CMP performance is attributed to the increased Ce^(3+)concentration and the octahedral morphology of the abrasives enhancing the chemical reaction and mechanical removal at the abrasive-substrate interface.
基金The authors are grateful for the financial supports by National Natural Science Foundation of China(51975488,51991373,and 51605396)National Key R&D Program of China(2018YFB2000400)+2 种基金Science Challenge Project(TZ2018006)Tribology Science Fund of State Key Laboratory of Tribology(SKLTKF16A02)Laboratory of Precision Manufacturing Technology CAEP(ZD17005).
文摘Ethylenediamine with two-NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing(CMP)slurries for a high carbon chromium GCr15 bearing steel(equivalent to AISI 52100).The polishing performance and corresponding mechanism of-NH2 functional groups were thoroughly investigated as a function of pH.It is revealed that,when polished with ethylenediamine and H2O2-based slurries,the material removal rate(MRR)and surface roughness Ra of GCr15 steel gradually decrease as pH increases.Compared with acidic pH of 4.0,at alkaline pH of 10.0,the surface film of GCr15 steel has much higher corrosion resistance and wear resistance,and thus the material removal caused by the pure corrosion and corrosion-enhanced wear are greatly inhibited,resulting in much lower MRR and Ra.Moreover,it is confirmed that a more protective composite film,consisting of more Fe3+hydroxides/oxyhydroxides and complex compounds with-NH2 functional groups of ethylenediamine,can be formed at pH of 10.0.Additionally,the polishing performance of pure iron and a medium carbon 45 steel exhibits a similar trend as GCr15 steel.The findings suggest that acidic pH could be feasible for amine groups-based complexing agents to achieve efficient CMP of iron-based metals.
