本文提出了一种新颖的MEMS多掩膜工艺,实现了带有大台阶和大深宽比窄槽的衬底上的体硅精细加工。通过薄胶多次光刻在衬底上制作出氧化硅(SiO2)、氮化硅(Si3N4)、光刻胶(photo-resist,PR)等材料的多层掩膜图形,每层掩膜可以进行一次衬底...本文提出了一种新颖的MEMS多掩膜工艺,实现了带有大台阶和大深宽比窄槽的衬底上的体硅精细加工。通过薄胶多次光刻在衬底上制作出氧化硅(SiO2)、氮化硅(Si3N4)、光刻胶(photo-resist,PR)等材料的多层掩膜图形,每层掩膜可以进行一次衬底刻蚀或腐蚀,刻蚀或腐蚀完毕后去除该层掩膜。该工艺解决了MEMS工艺中的深坑涂胶和光刻问题,结合深反应离子刻蚀(Deep Re-active Ion Etching,DR IE)、湿法腐蚀等工艺可以用于多级台阶、深坑底部精细结构、微结构释放等MEMS工艺。展开更多
A new method has been developed for fabrication of copper micro-pattern by selective chemical copper deposition based on photolithographed (3-mercaptopropyl)-trimethoxysilane (MPTS) self-assembly monolayers (SAMs). A...A new method has been developed for fabrication of copper micro-pattern by selective chemical copper deposition based on photolithographed (3-mercaptopropyl)-trimethoxysilane (MPTS) self-assembly monolayers (SAMs). As confirmed by scanning electron microscopy (SEM), Cu closely replicated the mask features. The present approach makes this technic to be cheap and may be applicable to assembly of microelectronic circuits.展开更多
文摘本文提出了一种新颖的MEMS多掩膜工艺,实现了带有大台阶和大深宽比窄槽的衬底上的体硅精细加工。通过薄胶多次光刻在衬底上制作出氧化硅(SiO2)、氮化硅(Si3N4)、光刻胶(photo-resist,PR)等材料的多层掩膜图形,每层掩膜可以进行一次衬底刻蚀或腐蚀,刻蚀或腐蚀完毕后去除该层掩膜。该工艺解决了MEMS工艺中的深坑涂胶和光刻问题,结合深反应离子刻蚀(Deep Re-active Ion Etching,DR IE)、湿法腐蚀等工艺可以用于多级台阶、深坑底部精细结构、微结构释放等MEMS工艺。
基金This work was supported by the National Natural Science Foundation of the Peoples Republic of China (No. 69890220).
文摘A new method has been developed for fabrication of copper micro-pattern by selective chemical copper deposition based on photolithographed (3-mercaptopropyl)-trimethoxysilane (MPTS) self-assembly monolayers (SAMs). As confirmed by scanning electron microscopy (SEM), Cu closely replicated the mask features. The present approach makes this technic to be cheap and may be applicable to assembly of microelectronic circuits.
