采用PC1D软件仿真分析钝化发射极及背接触（passivation emitter and rear contact,PERC）电池;模拟结果表明：降低电池的背表面复合速率有利于增强电池性能、提高电池长波响应。PERC电池由于背表面钝化可采用较低的背场厚度;背钝化层...采用PC1D软件仿真分析钝化发射极及背接触（passivation emitter and rear contact,PERC）电池;模拟结果表明：降低电池的背表面复合速率有利于增强电池性能、提高电池长波响应。PERC电池由于背表面钝化可采用较低的背场厚度;背钝化层中的表面电荷对高背表面复合速率的电池性能的提升作用显著,但在背表面复合速率较低时影响不大;实测得到PERC电池比常规全铝背接触电池的开路电压和短路电流分别增大1.56%和2.56%。展开更多
Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and ...Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.展开更多
文摘采用PC1D软件仿真分析钝化发射极及背接触（passivation emitter and rear contact,PERC）电池;模拟结果表明：降低电池的背表面复合速率有利于增强电池性能、提高电池长波响应。PERC电池由于背表面钝化可采用较低的背场厚度;背钝化层中的表面电荷对高背表面复合速率的电池性能的提升作用显著,但在背表面复合速率较低时影响不大;实测得到PERC电池比常规全铝背接触电池的开路电压和短路电流分别增大1.56%和2.56%。
基金Project supported by the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)JKW Project,China(Grant No.31512060106)
文摘Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.
