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层间介质(ILD)CMP工艺分析 被引量:3
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作者 詹阳 周国安 +2 位作者 王东辉 杨元元 胡兴臣 《电子工业专用设备》 2016年第6期40-44,共5页
论述了层间介质(ILD)的类型及其在集成电路设计中的作用。以典型层间介质SiO_2为例,分析其CMP(化学机械平坦化)工艺过程的化学和机械作用机理,并在此基础上阐述影响CMP工艺的各项关键因素。结合分析得出以SiO_2作为层间介质进行CMP的技... 论述了层间介质(ILD)的类型及其在集成电路设计中的作用。以典型层间介质SiO_2为例,分析其CMP(化学机械平坦化)工艺过程的化学和机械作用机理,并在此基础上阐述影响CMP工艺的各项关键因素。结合分析得出以SiO_2作为层间介质进行CMP的技术要求,工艺流程和设备结构需求。 展开更多
关键词 层间介质 平整度 抛光垫 修整器
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The brazing of diamond 被引量:2
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作者 Sung Michael Sung James C. 《金刚石与磨料磨具工程》 CAS 北大核心 2008年第S1期134-142,共9页
Diamond grits held in metal matrix(sintered or electroplated) are retained primary by mechanical locking.Because of this weak attachment,the pullouts of diamond from matrix are inevitable during the cutting process.Mo... Diamond grits held in metal matrix(sintered or electroplated) are retained primary by mechanical locking.Because of this weak attachment,the pullouts of diamond from matrix are inevitable during the cutting process.Moreover,the working grits have low protrusion heights,so the cutting speed of the tool is limited. Furthermore,the rubbing of metal matrix and the work object can cause thermal damages of diamond and other materials,and power increase for the operation. Diamond can be firmly held in a metal matrix by brazing.Because of the presence of strong chemical bonding,diamond grits can protrude twice as high without being knocked off from the matrix.As a result,the cutting speed of the tool may be doubled. When the braze melts,the carbide formers will migrate toward diamond to form carbide at the interface. This reaction may be excessive as to degrade diamond significantly.In this case,a coating on diamond may be needed to moderate the reaction. When diamond is brazed on the surface of a substrate,the melt tends to pull the grits closer together that may thicken the braze layer locally.The clustering of grits can reduce the cutting effectiveness of the diamond tool.A diamond grid design is necessary to maintain the uniform thickness of the braze layer.Moreover,the controlled melting of braze alloy can form a gentle slope around each diamond grit.Such a massive support can allow aggressive cutting of the diamond tool with a low power consumption. 展开更多
关键词 DIAMOND BRAZING DIAMOND DRESSER pad conditioner DIAMOND ADHERENCE DIAMOND distribution chemical mechanical PLANARIZATION
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The organic diamond disk(ODD)for dressing polishing pads of chemical mechanical planarization 被引量:1
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作者 Chou Cheng-Shiang Sung James C. +1 位作者 Pai Yang-Liang Sung Michael 《金刚石与磨料磨具工程》 CAS 北大核心 2008年第S1期126-129,共4页
Diamond pad conditioners can determine the efficiency of CMP processes and the quality of polished wafers.The polishing rate of a wafer is dependent on the amplitude(height) of pad asperities.The polishing uniformity ... Diamond pad conditioners can determine the efficiency of CMP processes and the quality of polished wafers.The polishing rate of a wafer is dependent on the amplitude(height) of pad asperities.The polishing uniformity is controlled by the frequency(density) of such asperities.Current diamond pad conditioners cannot dress the pad to produce microns sized asperities at high density.This is because the tips of diamond grits cannot be leveled to the same height so the grooved pad top is uneven with excessive asperities that may ruin the wafer and under sized asperities that is easily glazed. New designs of diamond pad conditioners have markedly improved the leveling of diamond tips.Organic diamond disks(ODD) are manufactured by reverse casting of polymers.Due to the uniform spacing of diamond grits and their controlled tip heights,none of the diamond grits will be overly stressed.Moreover,all diamond grits are sharing the dressing work.Consequently,the number of working grits of ODD is significantly higher than conventional designs.Moreover,because no diamond will cut pad unecessarily,the pad life is greatly lengthened.Furthermore,due to the uniform distribution of pad asperities,the slurry will be held efficiently so the run off is avoided.As a result,the slurry usage is reduced.ODD is therefore a significant savor of CMP consumables for semiconductor manufacture. 展开更多
关键词 CMP DIAMOND DRESSER pad conditioner epoxy
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The fabrication of ideal diamond disk(IDD)by casting diamond film on silicon wafer 被引量:1
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作者 Chen Ying-Tung Sung James C. +2 位作者 Kan Ming-Chi Chang Hsiao-Kuo Sung Michael 《金刚石与磨料磨具工程》 CAS 北大核心 2008年第S1期130-133,142,共5页
With the relentless densification of interconnected circuitry dictated by Moore’ s Law,the CMP manufacture of such delicate wafers requires the significant reduction of polishing pressure of integrated circuits,not o... With the relentless densification of interconnected circuitry dictated by Moore’ s Law,the CMP manufacture of such delicate wafers requires the significant reduction of polishing pressure of integrated circuits,not only globally,but also locally on every tip of the pad asperities.Conventional diamond disks used for dressing the polyurethane pads cannot produce asperities to achieve such uniformity.A new design of diamond disk was fabricated by casting diamond film on a silicon wafer that contains patterned etching pits. This silicon mold was subsequently removed by dissolution in a hydroxide solution.The diamond film followed the profile of the etching pits on silicon to form pyramids of identical in size and shape.The variation of their tip heights was in microns of single digit that was about one order of magnitude smaller than conventional diamond disks for CMP production.Moreover,the diamond film contained no metal that might contaminate the circuits on polished wafer during a CMP operation.The continuous diamond film could resist any corrosive attack by slurry of acid or base.Consequently,in-situ dressing during CMP is possible that may improve wafer uniformity and production throughput.This ideal diamond disk(IDD) is designed for the future manufacture of advanced semiconductor chips with node sizes of 32 nm or smaller. 展开更多
关键词 CMP pad conditioner DIAMOND film CVD Moore’s Law 32 nm node
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450 mm晶圆CMP设备技术现状与展望 被引量:2
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作者 柳滨 周国安 《电子工业专用设备》 2014年第3期33-36,60,共5页
分析化学机械平坦化(CMP)耗材发展现状及趋势,推断450 mm晶圆的CMP设备及技术的迫切性;在此基础上,展望450 mm晶圆将会采用系统集成技术、多区域压力控制承载器技术、抛光垫修整技术、终点检测技术、后清洗技术,并初步分析以上这些技术... 分析化学机械平坦化(CMP)耗材发展现状及趋势,推断450 mm晶圆的CMP设备及技术的迫切性;在此基础上,展望450 mm晶圆将会采用系统集成技术、多区域压力控制承载器技术、抛光垫修整技术、终点检测技术、后清洗技术,并初步分析以上这些技术的特点。最后指出随着晶圆制造厂激烈竞争和持续投资,对450 mm的CMP设备要求必有所突破。 展开更多
关键词 化学机械平坦化 集成技术 多区域压力控制 终点检测 抛光垫修整 后清洗
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CMP设备中抛光垫修整机构的研究 被引量:1
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作者 高文泉 李伟 +1 位作者 徐存良 郭强生 《电子工业专用设备》 2012年第8期1-3,30,共4页
介绍了一种新型抛光垫修整机构的功能、结构及运动原理,通过理论计算给出了修整力的计算公式,并介绍了一种原理简单,操作方便的气动控制系统。在工艺试验过程中,充分证明了其结构原理及控制系统的合理性,进而在理论和实践两个方面确定... 介绍了一种新型抛光垫修整机构的功能、结构及运动原理,通过理论计算给出了修整力的计算公式,并介绍了一种原理简单,操作方便的气动控制系统。在工艺试验过程中,充分证明了其结构原理及控制系统的合理性,进而在理论和实践两个方面确定了该机构已达到设计要求。 展开更多
关键词 抛光垫修整机构 修整力 气动控制系统
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CMP设备修整器防撞机构设计
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作者 张继静 刘福强 +1 位作者 张金环 田知玲 《电子工业专用设备》 2022年第4期65-68,共4页
介绍了一种用于晶圆化学机械抛光(CMP)设备修整器模块的防撞机构,在控制异常或控制参数设置不合理的情况下,可以精确地避免修整器与抛光头碰撞。经过大量工艺实验证明,其防撞性能稳定、可靠,而且控制效果良好。
关键词 修整器 CMP设备 防撞 失效控制
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CMP中抛光垫的性质研究 被引量:4
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作者 周国安 种宝春 +1 位作者 柳滨 王学军 《微纳电子技术》 CAS 2008年第8期488-491,共4页
以IC1000/SubaIV抛光垫为例,综述了影响抛光垫性能的各种因素,以文献相关数据为依据,着重分析了抛光温度和修整力对抛光垫性能的影响。从分析结果可以得出:IC1000/SubaIV比单层结构IC1000具有更好的抛光效果;新旧抛光垫性能在0... 以IC1000/SubaIV抛光垫为例,综述了影响抛光垫性能的各种因素,以文献相关数据为依据,着重分析了抛光温度和修整力对抛光垫性能的影响。从分析结果可以得出:IC1000/SubaIV比单层结构IC1000具有更好的抛光效果;新旧抛光垫性能在0~40℃基本相当;新、旧和没有黏合剂抛光垫的正常工作温度为-2.02~103.64℃,且玻璃过渡温度随着抛光垫厚度的减小而增加;抛光垫在0~50℃具有最小的外形变化。定性得出修整力与抛光精度成反比关系,明确了较小修整深度具备较好的平坦化效果。 展开更多
关键词 化学机械抛光 抛光垫 玻璃过渡温度 机械动力分析 热机械分析 修整器
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Diamond breakage on CMP pad conditioner
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作者 Liu Ping-Hsiao Sung James C. +1 位作者 Hsu Kai-Hung Sung Michael 《金刚石与磨料磨具工程》 CAS 北大核心 2008年第S1期115-118,共4页
Diamond grits may be thermally weakened during the high temperature cycle of brazing.This weakening may exhibit as diamond breakage.During the dressing action,taller diamond grits are more likely to break due to the h... Diamond grits may be thermally weakened during the high temperature cycle of brazing.This weakening may exhibit as diamond breakage.During the dressing action,taller diamond grits are more likely to break due to the higher stress present. 展开更多
关键词 DIAMOND BRAZING DIAMOND BREAKAGE CMP pad conditioner
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抛光垫修整系统的应用研究
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作者 张玮琪 王洪建 孙敏 《电子工业专用设备》 2015年第8期15-18,50,共5页
抛光垫修整器系统是CMP设备的重要组成部分,它可以优化CMP的工艺结果,有效延长抛光垫的寿命;通过介绍抛光垫修整器装置的整体结构、机械结构、气动控制及建立数学模型,并利用Matlab软件进行仿真,得出全抛光垫均匀修整覆盖的模型,指出今... 抛光垫修整器系统是CMP设备的重要组成部分,它可以优化CMP的工艺结果,有效延长抛光垫的寿命;通过介绍抛光垫修整器装置的整体结构、机械结构、气动控制及建立数学模型,并利用Matlab软件进行仿真,得出全抛光垫均匀修整覆盖的模型,指出今后抛光垫修整器应具备更多功能,以满足抛光垫的修整需要。 展开更多
关键词 化学机械平坦化 抛光垫修整器 抛光垫 集成电路设备
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