Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain.However,high-performance broadband self-driven photodetectors ...Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain.However,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction.Here,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface recombination.The device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as 377.45.The R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of photocurrent.It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.展开更多
基金supported by the National Key Research and Development Program of China(No.2019YFA0705201)the National Natural Science Foundation of China(No.U2032129).
文摘Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain.However,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction.Here,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface recombination.The device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as 377.45.The R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of photocurrent.It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.
