In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemic...In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemical vapor deposition(MOCVD)technique,and the growth parameters,including the AlGaN growth temperature,preheating temperature of the p-GaN layer,and NH3/N2 flow rate,are optimized to improve the quality of the epilayer.The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density.The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse.With a p-GaN of 1µm,the UV PD demonstrates a significant switching ratio and transconductance of 107 and 127.3 mS mm^(-1),respectively.Acting as a UV PD,it also exhibits a high light on/off ratio(I_(light)/I_(dark))of 6.35×10^(5),a high responsivity(R)of 48.11 A W^(-1),and a detectivity(D*)of 6.85×10^(12)Jones under 365-nm UV illumination with light power density of 86.972 mW cm^(-2).The high-performance HEMT and UV detectors,which incorporate p-GaN etchless technology,have been refined through advancements in epitaxial growth and structural design.These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.展开更多
基金supported by the National Natural Science Foundation of China(11904108)Guangdong Basic and Applied Basic Research Foundation(2020B1515020032)"The pearl River Talent Recruitment Program"(2019ZT08X639)。
文摘In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemical vapor deposition(MOCVD)technique,and the growth parameters,including the AlGaN growth temperature,preheating temperature of the p-GaN layer,and NH3/N2 flow rate,are optimized to improve the quality of the epilayer.The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density.The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse.With a p-GaN of 1µm,the UV PD demonstrates a significant switching ratio and transconductance of 107 and 127.3 mS mm^(-1),respectively.Acting as a UV PD,it also exhibits a high light on/off ratio(I_(light)/I_(dark))of 6.35×10^(5),a high responsivity(R)of 48.11 A W^(-1),and a detectivity(D*)of 6.85×10^(12)Jones under 365-nm UV illumination with light power density of 86.972 mW cm^(-2).The high-performance HEMT and UV detectors,which incorporate p-GaN etchless technology,have been refined through advancements in epitaxial growth and structural design.These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.
