An asymmetric anthracene derivative(4-HDPA) was designed and synthesized. With the optimization of proper scenario of fabrication process, top-contact thin film devices based on 4-HDPA exhibit mobility as high as 3.59...An asymmetric anthracene derivative(4-HDPA) was designed and synthesized. With the optimization of proper scenario of fabrication process, top-contact thin film devices based on 4-HDPA exhibit mobility as high as 3.59 cm^2 V^(–1) s^(–1), while its singlecrystal devices exhibit mobility as high as 5.12 cm^2 V^(–1) s^(–1), which is higher than the symmetrical counterpart of 4-HDPA in both single-crystal and thin film devices.展开更多
A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between ...A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.展开更多
基金supported by the National Key R&D Program (2017YFA0204503, 2016YFB0401100)the National Natural Science Foundation of China (51703159, 51633006, 51733004)the Strategic Priority Research Program (XDB12030300) of the Chinese Academy of Science
文摘An asymmetric anthracene derivative(4-HDPA) was designed and synthesized. With the optimization of proper scenario of fabrication process, top-contact thin film devices based on 4-HDPA exhibit mobility as high as 3.59 cm^2 V^(–1) s^(–1), while its singlecrystal devices exhibit mobility as high as 5.12 cm^2 V^(–1) s^(–1), which is higher than the symmetrical counterpart of 4-HDPA in both single-crystal and thin film devices.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61071026 and 61177032)the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No.61021061)+1 种基金the Fundamental Research Fund for the Central Universities of Misistry of Education of China (Grant No.ZYGX2010Z004)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090185110020)
文摘A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
