Self-healing materials have been developed over the past decade with the recovery ability after damage.However,most researches focused on the self-healing process at three-dimension.Herein,we prepare monolayer self-he...Self-healing materials have been developed over the past decade with the recovery ability after damage.However,most researches focused on the self-healing process at three-dimension.Herein,we prepare monolayer self-healing hydrogen-bond-based supramolecular polymer film and explore the self-healing process at the two-dimensional limit.The healing process,which can be reversibly repeated for at least three times,is influenced by the temperature,the molecule-substrate interaction and the substrate roughness.In the application,the monolayer self-healing polymer film can be used to modify the SiO2 dielectric for copper phthalocyanine field effect transistor with improved mobility.This work will be valuable for developing two-dimensional functional self-healing materials in the future.展开更多
介绍了基于有机场效应晶体管(organic field effect transistor,OFET)技术的柔性半导体器件的工作原理和发展概况,综述了基于OFET的生物力学监测设备、文身生物监测设备、细胞检测设备等可穿戴柔性监测设备的研究现状,分析了基于OFET的...介绍了基于有机场效应晶体管(organic field effect transistor,OFET)技术的柔性半导体器件的工作原理和发展概况,综述了基于OFET的生物力学监测设备、文身生物监测设备、细胞检测设备等可穿戴柔性监测设备的研究现状,分析了基于OFET的可穿戴柔性监测设备存在的不足,指出了微型化、个性化、多元化等是未来基于OFET的可穿戴柔性监测设备的发展方向。展开更多
Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent yea...Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.展开更多
Density functional theory (DFT) calculations were carried out to investigate the organic field effect transistor (OFET) performance of the symmetrical metal-free tetrakis (1,2,5-thiadiazole) porphyrazine (S4)PzH2 and ...Density functional theory (DFT) calculations were carried out to investigate the organic field effect transistor (OFET) performance of the symmetrical metal-free tetrakis (1,2,5-thiadiazole) porphyrazine (S4)PzH2 and tetrakis (1,4-diamyloxybenzene) (A4)PzH2 as well as the low-symmetry metal-free porphy- razine with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene groups in the ratio 2:2 (cis) and 1:3, that is, (cis-S2A2)PzH2 and (SA3)PzH2, (S = 1,2,5-thiadiazole ring, A = annulated 1,4-diamyloxy-benzene ring, Pz = porphyrazine) in terms of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy, ionization energy (IE), electron affinity (EA), and their reorganization energy (λ) during the charge-transport process. On the basis of Marcus electron transfer theory, electronic couplings (V) and field effect transistor (FET) properties for the four compounds with known crystal structure have been calculated. The electron transfer mobility (μ -) is revealed to be 0.056 cm2·V-1·s-1 for (S4)PzH2. The hole transfer mobility (μ+) is 0.075, 0.098, and 8.20 cm2·V-1·s-1 for (cis-S2A2)PzH2, (SA3)PzH2, and (A4)PzH2, respectively. The present work represents the theoretical effort towards understanding the OFET properties of symmetrical and unsymmetrical porphyrazine derivatives with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene.展开更多
This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor.The organic field effect transistor was fabricated on thoroughly cleaned glass substrate,in which...This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor.The organic field effect transistor was fabricated on thoroughly cleaned glass substrate,in which the junction between the metal gate and the organic channel plays the role of gate dielectric.Thin films of organic semiconductor copper phthalocynanine（CuPc） and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes.The output and transfer characteristics of the fabricated device were performed.The effect of humidity on the drain current,drain current-drain voltage relationship, and threshold voltage was investigated.It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.展开更多
基金supported by National Program for Thousand Young Talents of China,the National Natural Science Foundation of China(Nos.51773041,21544001,21603038)Shanghai Committee of Science and Technology in China(No.18ZR1404900)Fudan University
文摘Self-healing materials have been developed over the past decade with the recovery ability after damage.However,most researches focused on the self-healing process at three-dimension.Herein,we prepare monolayer self-healing hydrogen-bond-based supramolecular polymer film and explore the self-healing process at the two-dimensional limit.The healing process,which can be reversibly repeated for at least three times,is influenced by the temperature,the molecule-substrate interaction and the substrate roughness.In the application,the monolayer self-healing polymer film can be used to modify the SiO2 dielectric for copper phthalocyanine field effect transistor with improved mobility.This work will be valuable for developing two-dimensional functional self-healing materials in the future.
文摘介绍了基于有机场效应晶体管(organic field effect transistor,OFET)技术的柔性半导体器件的工作原理和发展概况,综述了基于OFET的生物力学监测设备、文身生物监测设备、细胞检测设备等可穿戴柔性监测设备的研究现状,分析了基于OFET的可穿戴柔性监测设备存在的不足,指出了微型化、个性化、多元化等是未来基于OFET的可穿戴柔性监测设备的发展方向。
文摘Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.
基金Supported by the National Natural Science Foundation of China (Grant No. 50673051) Beijing Municipal Commission of Edueation
文摘Density functional theory (DFT) calculations were carried out to investigate the organic field effect transistor (OFET) performance of the symmetrical metal-free tetrakis (1,2,5-thiadiazole) porphyrazine (S4)PzH2 and tetrakis (1,4-diamyloxybenzene) (A4)PzH2 as well as the low-symmetry metal-free porphy- razine with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene groups in the ratio 2:2 (cis) and 1:3, that is, (cis-S2A2)PzH2 and (SA3)PzH2, (S = 1,2,5-thiadiazole ring, A = annulated 1,4-diamyloxy-benzene ring, Pz = porphyrazine) in terms of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy, ionization energy (IE), electron affinity (EA), and their reorganization energy (λ) during the charge-transport process. On the basis of Marcus electron transfer theory, electronic couplings (V) and field effect transistor (FET) properties for the four compounds with known crystal structure have been calculated. The electron transfer mobility (μ -) is revealed to be 0.056 cm2·V-1·s-1 for (S4)PzH2. The hole transfer mobility (μ+) is 0.075, 0.098, and 8.20 cm2·V-1·s-1 for (cis-S2A2)PzH2, (SA3)PzH2, and (A4)PzH2, respectively. The present work represents the theoretical effort towards understanding the OFET properties of symmetrical and unsymmetrical porphyrazine derivatives with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene.
文摘This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor.The organic field effect transistor was fabricated on thoroughly cleaned glass substrate,in which the junction between the metal gate and the organic channel plays the role of gate dielectric.Thin films of organic semiconductor copper phthalocynanine（CuPc） and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes.The output and transfer characteristics of the fabricated device were performed.The effect of humidity on the drain current,drain current-drain voltage relationship, and threshold voltage was investigated.It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.
基金supported by the National Natural Science Foundation of China(20931001)Excellent Young Scholars of Higher University ofHeilongjiang Province,China,Science+2 种基金Technology Project of Mudanjiang,ChinaDoctoral Research Fund of Mudanjiang Teachers College,China(MSB:200902)Research Fund of Mudanjiang Teachers College,China(KY:200902)~~
