The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-gene...The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite （CsPbBr3, CPB）. The devices have electric field-induced bipolar resistive switching （ReS） and memory behaviors with a large on/off ratio （〉105）, low working voltage （〈1 V） and energy consumption, long data retention （〉104 s）, and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed （〈1 ms）, which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.展开更多
Organic-inorganic halide perovskites(OHPs)have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%.The unique electrical and optical properties of OHPs have led to the...Organic-inorganic halide perovskites(OHPs)have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%.The unique electrical and optical properties of OHPs have led to their use in optoelectronic device applications beyond photovoltaics,such as light-emitting diodes,photodetectors,transistors.New information storage technologies and computing architectures are being researched extensively with the aim of addressing the growing challenge of approaching end of Moore's law and von Neumann bottleneck.As the fourth basic circuit element,memristor is a leading candidate with powerful capabilities in information storage and neuromorphic computing applications.Recently,OHPs have received growing attention as promising materials for memristors.In particular,their mixed ionic-electronic conduction ability paired with light sensitivity provide OHPs with the opportunity to display novel functions such as optical-erase memory,optogenetics-inspired synaptic functions,and lightaccelerated learning capability.This review covers recent advances in OHP-based memristors development including memristive mechanism and analytical models,universal memristive characteristics for memory and neuromorphic computing applications,and novel multi-functionalization.Challenges and future prospects of OHP-based memristors are also discussed.展开更多
Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation...Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy.Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing attention.At present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices.Here,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere.This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with light.Moreover,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism.Hence,this study is an important step towards the next generation of artificial visual systems.展开更多
The bleaching effect, i.e. the crystal shows that decoloration after it is illuminated by ultraviolet light, has been observed in congruent LiNbO3:Fe:Cu crystals. Based on this bleaching effect, a new technique includ...The bleaching effect, i.e. the crystal shows that decoloration after it is illuminated by ultraviolet light, has been observed in congruent LiNbO3:Fe:Cu crystals. Based on this bleaching effect, a new technique including the recording phase by two interfering red beams and fixing phase by both UV light and a coherent red beam has been experimentally investigated to realize nonvolatile holographic storage in LiNbO3:Fe:Cu. The results of proof-of-concept experiments confirm that bleaching effect becomes an alternative physical mechanism for nonvolatile holographic storage with high recording sensitivity and weak light-induced scattering noise.展开更多
Neuromorphic computing aims to achieve artificial intelligence by mimicking the mechanisms of biological neurons and synapses that make up the human brain.However,the possibility of using one reconfigurable memristor ...Neuromorphic computing aims to achieve artificial intelligence by mimicking the mechanisms of biological neurons and synapses that make up the human brain.However,the possibility of using one reconfigurable memristor as both artificial neuron and synapse still requires intensive research in detail.In this work,Ag/SrTiO_(3)(STO)/Pt memristor with low operating voltage is manufactured and reconfigurable as both neuron and synapse for neuromorphic computing chip.By modulating the compliance current,two types of resistance switching,volatile and nonvolatile,can be obtained in amorphous STO thin film.This is attributed to the manipulation of the Ag conductive filament.Furthermore,through regulating electrical pulses and designing bionic circuits,the neuronal functions of leaky integrate and fire,as well as synaptic biomimicry with spike-timing-dependent plasticity and paired-pulse facilitation neural regulation,are successfully realized.This study shows that the reconfigurable devices based on STO thin film are promising for the application of neuromorphic computing systems.展开更多
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibi...Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.展开更多
In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theor...In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.展开更多
Low-power reconfigurable optical circuits are highly demanded to satisfy a variety of different applications. Conventional electro-optic and thermo-optic refractive index tuning methods in silicon photonics are not su...Low-power reconfigurable optical circuits are highly demanded to satisfy a variety of different applications. Conventional electro-optic and thermo-optic refractive index tuning methods in silicon photonics are not suitable for reconfiguration of optical circuits due to their high static power consumption and volatility. We propose and demonstrate a nonvolatile tuning method by utilizing the reversible phase change property of GST integrated on top of the silicon waveguide. The phase change is enabled by applying electrical pulses to the lm-sized GST active region in a sandwich structure. The experimental results show that the optical transmission of the silicon waveguide can be tuned by controlling the phase state of GST.展开更多
Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional p...Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor(CMOS)-compatibility and limited scalability.Next-generation cost-efficient,high-density FeRAM shall therefore rely on a material revolution.Since the discovery of ferroelectricity in Si:HfO_(2)thin films in 2011,HfO_(2)-based materials have aroused widespread interest in the field of FeRAM,because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm.A review on this new class of ferroelectric materials is therefore of great interest.In this paper,the most appealing topics about ferroelectric HfO_(2)-based materials including origins of ferroelectricity,advantageous material properties,and current and potential applications in FeRAM,are briefly reviewed.展开更多
Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of co...Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale.As a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)miniaturization.Recently,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of miniaturization.Soon,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were demon-strated.However,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still lacking.Here,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are reviewed.Furthermore,the correlations among the structures,the properties,and the device performance are analyzed.Finally,several crucial problems or challenges and possible research directions are put forward.We hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.展开更多
文摘The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite （CsPbBr3, CPB）. The devices have electric field-induced bipolar resistive switching （ReS） and memory behaviors with a large on/off ratio （〉105）, low working voltage （〈1 V） and energy consumption, long data retention （〉104 s）, and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed （〈1 ms）, which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.
基金supported by the National Natural Science Foundation of China(NSFC)for Excellent Young Scholars(No.51422201)the NSFC Program(Nos.51701037,51732003,61774031,51872043,and 61574031)+3 种基金the“111”Project(No.B13013)the Fund from People's Government of Jilin Province(Nos.20180520186JH,and JJKH20190275KJ)the Project Funded by China Postdoctoral Science Foundation(No.2017M621189)Fundamental Research Funds for the Central Universities(No.JGPY201909).
文摘Organic-inorganic halide perovskites(OHPs)have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%.The unique electrical and optical properties of OHPs have led to their use in optoelectronic device applications beyond photovoltaics,such as light-emitting diodes,photodetectors,transistors.New information storage technologies and computing architectures are being researched extensively with the aim of addressing the growing challenge of approaching end of Moore's law and von Neumann bottleneck.As the fourth basic circuit element,memristor is a leading candidate with powerful capabilities in information storage and neuromorphic computing applications.Recently,OHPs have received growing attention as promising materials for memristors.In particular,their mixed ionic-electronic conduction ability paired with light sensitivity provide OHPs with the opportunity to display novel functions such as optical-erase memory,optogenetics-inspired synaptic functions,and lightaccelerated learning capability.This review covers recent advances in OHP-based memristors development including memristive mechanism and analytical models,universal memristive characteristics for memory and neuromorphic computing applications,and novel multi-functionalization.Challenges and future prospects of OHP-based memristors are also discussed.
基金This work was supported in part by the National Natural Science Foundation of China(U20A20209 and 61874125)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB32050204)+1 种基金the Zhejiang Provincial Natural Science Foundation of China(LD19E020001 and LQ22F040003)the State Key Laboratory of Silicon Materials(SKL2021-03).
文摘Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy.Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing attention.At present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices.Here,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere.This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with light.Moreover,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism.Hence,this study is an important step towards the next generation of artificial visual systems.
基金This work was supported by the National Natural Science Foundation of China (Grant No. 60177016)the Science Committee of Shanghai (Grant No. 012261011)the National Outstanding Youth Foundation of China (Grant No. 60125512).
文摘The bleaching effect, i.e. the crystal shows that decoloration after it is illuminated by ultraviolet light, has been observed in congruent LiNbO3:Fe:Cu crystals. Based on this bleaching effect, a new technique including the recording phase by two interfering red beams and fixing phase by both UV light and a coherent red beam has been experimentally investigated to realize nonvolatile holographic storage in LiNbO3:Fe:Cu. The results of proof-of-concept experiments confirm that bleaching effect becomes an alternative physical mechanism for nonvolatile holographic storage with high recording sensitivity and weak light-induced scattering noise.
基金supported by the National Key R&D Program of China (Grant No.2018AAA0103300)the National Key R&D Plan“Nano Frontier”Key Special Project (Grant No.2021YFA1200502)+13 种基金the Cultivation Projects of National Major R&D Project (Grant No.92164109)the National Natural Science Foundation of China (Grant Nos.61874158,62004056,and 62104058)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences (Grant No.XDB44000000-7)Hebei Basic Research Special Key Project (Grant No.F2021201045)the Support Program for the Top Young Talents of Hebei Province (Grant No.70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (Grant No.SLRC2019018)the Interdisciplinary Research Program of Natural Science of Hebei University (No.DXK202101)Institute of Life Sciences and Green Development (No.521100311)the Natural Science Foundation of Hebei Province (Nos.F2022201054 and F2021201022)the Outstanding Young Scientific Research and Innovation team of Hebei University (Grant No.605020521001)Special Support Funds for National High Level Talents (Grant No.041500120001)High-level Talent Research Startup Project of Hebei University (Grant No.521000981426)the Science and Technology Project of Hebei Education Department (Grant Nos.QN2020178 and QN2021026)Baoding Science and Technology Plan Project (Nos.2172P011 and 2272P014).
文摘Neuromorphic computing aims to achieve artificial intelligence by mimicking the mechanisms of biological neurons and synapses that make up the human brain.However,the possibility of using one reconfigurable memristor as both artificial neuron and synapse still requires intensive research in detail.In this work,Ag/SrTiO_(3)(STO)/Pt memristor with low operating voltage is manufactured and reconfigurable as both neuron and synapse for neuromorphic computing chip.By modulating the compliance current,two types of resistance switching,volatile and nonvolatile,can be obtained in amorphous STO thin film.This is attributed to the manipulation of the Ag conductive filament.Furthermore,through regulating electrical pulses and designing bionic circuits,the neuronal functions of leaky integrate and fire,as well as synaptic biomimicry with spike-timing-dependent plasticity and paired-pulse facilitation neural regulation,are successfully realized.This study shows that the reconfigurable devices based on STO thin film are promising for the application of neuromorphic computing systems.
基金fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055)National Key Research and Development program of China(No.2021YFA1200700)+1 种基金Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100)the Fundamental Research Funds for the Central Universities.
文摘Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.
文摘In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.
基金supported by the National Natural Science Foundation of China(61535006,61705129 and 61661130155)Shanghai Municipal Science and Technology Major Project(2017SHZDZX03)
文摘Low-power reconfigurable optical circuits are highly demanded to satisfy a variety of different applications. Conventional electro-optic and thermo-optic refractive index tuning methods in silicon photonics are not suitable for reconfiguration of optical circuits due to their high static power consumption and volatility. We propose and demonstrate a nonvolatile tuning method by utilizing the reversible phase change property of GST integrated on top of the silicon waveguide. The phase change is enabled by applying electrical pulses to the lm-sized GST active region in a sandwich structure. The experimental results show that the optical transmission of the silicon waveguide can be tuned by controlling the phase state of GST.
基金the Singapore National Research Foundation under CRP Award No.NRF-CRP10-2012-02.
文摘Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor(CMOS)-compatibility and limited scalability.Next-generation cost-efficient,high-density FeRAM shall therefore rely on a material revolution.Since the discovery of ferroelectricity in Si:HfO_(2)thin films in 2011,HfO_(2)-based materials have aroused widespread interest in the field of FeRAM,because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm.A review on this new class of ferroelectric materials is therefore of great interest.In this paper,the most appealing topics about ferroelectric HfO_(2)-based materials including origins of ferroelectricity,advantageous material properties,and current and potential applications in FeRAM,are briefly reviewed.
基金China Postdoctoral Science Foundation,Grant/Award Number:2019M661200National Natural Science Foundation of China,Grant/Award Numbers:11874171,11904118,61922035Fundamental Research Funds for the Central Universities。
文摘Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale.As a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)miniaturization.Recently,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of miniaturization.Soon,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were demon-strated.However,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still lacking.Here,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are reviewed.Furthermore,the correlations among the structures,the properties,and the device performance are analyzed.Finally,several crucial problems or challenges and possible research directions are put forward.We hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.
