An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well struct...An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.展开更多
A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than...A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than that in the subthreshold region when the applied gate voltage is low.However,the applied gate voltage being up to 3V,the gate-induced noise is more notable with the ω/ω T increasing when the MOSFET operates in the subthreshold region than that in the strong reversion region.Between the photocurrent I D and the root mean square value of the gated-induced noise,current i 2 d presents the relation of i 2 d∝I D in the saturation region of the strong reversion and approximately i 2 d∝I D in the subthreshold region.A deta iled and rigorous study of the gate-induced noise in the reset MOSFET for the p hotodiode APS and improved photodiode APS are provided.The improvement of logari thmic response APS is analyzed and the simulation results show that the gate-in duced noise can be reduced.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60806010,60976030)the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200).
文摘An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.
文摘A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than that in the subthreshold region when the applied gate voltage is low.However,the applied gate voltage being up to 3V,the gate-induced noise is more notable with the ω/ω T increasing when the MOSFET operates in the subthreshold region than that in the strong reversion region.Between the photocurrent I D and the root mean square value of the gated-induced noise,current i 2 d presents the relation of i 2 d∝I D in the saturation region of the strong reversion and approximately i 2 d∝I D in the subthreshold region.A deta iled and rigorous study of the gate-induced noise in the reset MOSFET for the p hotodiode APS and improved photodiode APS are provided.The improvement of logari thmic response APS is analyzed and the simulation results show that the gate-in duced noise can be reduced.
