Purpose HPGe detectors can be used for both dark matter search and neutrinoless double beta decay experiments.However,signal amplitudes of these two experiments are quite different.This paper presents the development ...Purpose HPGe detectors can be used for both dark matter search and neutrinoless double beta decay experiments.However,signal amplitudes of these two experiments are quite different.This paper presents the development of a wide dynamic range CMOS preamplifier for HPGe detectors,which can also be used for low light level photon detection.Methods The structure of a dual-stage dual-gain amplifier was adopted to receive the signals with charges ranging from~0.01 fC to 500 fC.A novel“pre-reset”technique has been proposed to reduce the dead time ratio for large signals.A prototype chip was fabricated and tested.Results A minimum ENC of 43 electrons has been achieved for the high-gain channel at 77 K and the maximum charge of the input signal could be up to 500 fC for the low-gain channel,corresponding to a dynamic range above 90 dB.Conclusions The dual-gain structure of the preamplifier and the“pre-reset”method have been successfully verified,which can be used for HPGe detectors for dark matter and neutrino experiments in the future.展开更多
We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).P...We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250.The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio(SNR)is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08µW.By combining of the inductor and capacitance,the alternating current(AC)and direct current(DC)branches of the PD can operate linearly in a dynamic range from 25.06µW to 17.50 mW.The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.展开更多
Abs A method to judge complete charger transfer is proposed for a four-transistor CMOS image sensor with a large pixel size. Based on the emission current theory, a qualitative photoresponse model is established to th...Abs A method to judge complete charger transfer is proposed for a four-transistor CMOS image sensor with a large pixel size. Based on the emission current theory, a qualitative photoresponse model is established to the preliminary prediction. Further analysis of noise for incomplete charge transfer predicts the noise variation. The test pixels were fabricated in a specialized 0.18 #m CMOS image sensor process and two different processes of buried N layer implantation are compared. The trend prediction corresponds with the test results, especially as it can distinguish an unobvious incomplete charge transfer. The method helps us judge whether the charge transfer time satisfies the requirements of the readout circuit for the given process especially for pixels of a large size.展开更多
To meet the demands for a number of LEDs,a novel charge pump circuit with current mode control is proposed.Regulation is achieved by operating the current mirrors and the output current of the operational transconduct...To meet the demands for a number of LEDs,a novel charge pump circuit with current mode control is proposed.Regulation is achieved by operating the current mirrors and the output current of the operational transconductance amplifier.In the steady state,the input current from power voltage retains constant,so reducing the noise induced on the input voltage source and improving the output voltage ripple.The charge pump small-signal model is used to describe the device’s dynamic behavior and stability.Analytical predictions were verified by Hspice simulation and testing.Load driving is up to 800 mA with a power voltage of 3.6 V,and the output voltage ripple is less than 45 mV.The output response time is less than 8μs,and the load current jumps from 400 to 800 mA.展开更多
In wireless sensor network （WSN）, the communication node is the heart of the whole system. Negative bias temperature instability （NBTI） is becoming one of the most important factors that decide the life time of no...In wireless sensor network （WSN）, the communication node is the heart of the whole system. Negative bias temperature instability （NBTI） is becoming one of the most important factors that decide the life time of node chips, especially with the feature size declining. In this paper, the NBTI impact on the front-end circuits in the WSN nodes is studied, such as voltage-controlled oscillator （VCO）, charge pump （CP）, low noise amplifier （LNA）, and even the whole transceiver system. The circuit level NBTI degeneration models are built for the key modules and the entire transceiver. It is shown that the phase noise of the VCO will be deteriorated, the current mismatch of the CP and the noise figure of the LNA will both be increased, and the sensitivity and the adjacent channel selectivity （ACS） will be depressed by NBTI. The conclusions are proved by simulation results using HJTC 0.18 μm technology.展开更多
基金supported in part by NSFC under Grant 11975140 and in part by the National Key Research and Development Project under Grant 2017YFA0402202.
文摘Purpose HPGe detectors can be used for both dark matter search and neutrinoless double beta decay experiments.However,signal amplitudes of these two experiments are quite different.This paper presents the development of a wide dynamic range CMOS preamplifier for HPGe detectors,which can also be used for low light level photon detection.Methods The structure of a dual-stage dual-gain amplifier was adopted to receive the signals with charges ranging from~0.01 fC to 500 fC.A novel“pre-reset”technique has been proposed to reduce the dead time ratio for large signals.A prototype chip was fabricated and tested.Results A minimum ENC of 43 electrons has been achieved for the high-gain channel at 77 K and the maximum charge of the input signal could be up to 500 fC for the low-gain channel,corresponding to a dynamic range above 90 dB.Conclusions The dual-gain structure of the preamplifier and the“pre-reset”method have been successfully verified,which can be used for HPGe detectors for dark matter and neutrino experiments in the future.
基金Project supported by the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(STIP)(Nos.2021L562 and 2022L573)the Key Research and Development Projects for Attarcting High-Level Scientific and Technological Talents to Lvliang City(No.2021RC-2-27)+3 种基金the Open Fund of the Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques(South China University of Technology)(No.2021-06)the Key Research and Development Projects in the Field of Social Development of Lvliang City(No.2022SHFZ43)Higher Education Reform and Innovation Project of Shanxi Province,China(Nos.J2021718,J2021744,and J2021717)the Innovation and Entrepreneurship Training Program for College Students,China(No.202310812012)。
文摘We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250.The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio(SNR)is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08µW.By combining of the inductor and capacitance,the alternating current(AC)and direct current(DC)branches of the PD can operate linearly in a dynamic range from 25.06µW to 17.50 mW.The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.
基金supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
文摘Abs A method to judge complete charger transfer is proposed for a four-transistor CMOS image sensor with a large pixel size. Based on the emission current theory, a qualitative photoresponse model is established to the preliminary prediction. Further analysis of noise for incomplete charge transfer predicts the noise variation. The test pixels were fabricated in a specialized 0.18 #m CMOS image sensor process and two different processes of buried N layer implantation are compared. The trend prediction corresponds with the test results, especially as it can distinguish an unobvious incomplete charge transfer. The method helps us judge whether the charge transfer time satisfies the requirements of the readout circuit for the given process especially for pixels of a large size.
基金supported by the National Natural Science Foundation of China(No.60876023)
文摘To meet the demands for a number of LEDs,a novel charge pump circuit with current mode control is proposed.Regulation is achieved by operating the current mirrors and the output current of the operational transconductance amplifier.In the steady state,the input current from power voltage retains constant,so reducing the noise induced on the input voltage source and improving the output voltage ripple.The charge pump small-signal model is used to describe the device’s dynamic behavior and stability.Analytical predictions were verified by Hspice simulation and testing.Load driving is up to 800 mA with a power voltage of 3.6 V,and the output voltage ripple is less than 45 mV.The output response time is less than 8μs,and the load current jumps from 400 to 800 mA.
基金supported in party by the National Key Technological Program of China under Grant No.2008ZX01035-001supported by National Natural Science Foundation of China under Grant No.60870001
文摘In wireless sensor network （WSN）, the communication node is the heart of the whole system. Negative bias temperature instability （NBTI） is becoming one of the most important factors that decide the life time of node chips, especially with the feature size declining. In this paper, the NBTI impact on the front-end circuits in the WSN nodes is studied, such as voltage-controlled oscillator （VCO）, charge pump （CP）, low noise amplifier （LNA）, and even the whole transceiver system. The circuit level NBTI degeneration models are built for the key modules and the entire transceiver. It is shown that the phase noise of the VCO will be deteriorated, the current mismatch of the CP and the noise figure of the LNA will both be increased, and the sensitivity and the adjacent channel selectivity （ACS） will be depressed by NBTI. The conclusions are proved by simulation results using HJTC 0.18 μm technology.
