III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende and wurtzite structures. So far, this polytypism has impeded the determination of the electronic properties of the me...III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende and wurtzite structures. So far, this polytypism has impeded the determination of the electronic properties of the metastable wurtzite phase of GaAs, which thus remain highly controversial. In an effort to obtain new insights into this topic, we cross-correlate nanoscale spectral imaging by near-field scanning optical microscopy with a transmission electron microscopy analysis of the very same polytypic GaAs nanowire dispersed onto a Si wafer. Thus, spatially resolved photoluminescence spectra could be unambiguously assigned to nanowire segments whose structure is known with lattice-resolved accuracy. An emission energy of 1.528 eV was observed from extended zincblende segments, revealing that the dispersed nanowire was under uniaxial strain presumably due to interaction with its supporting substrate. These crucial information and the emission energy obtained for extended pure wurtzite segments were used to perform envelope function calculations of zincblende quantum disks in a wurtzite matrix as well as the inverse structure. In these calculations, we varied the fundamental bandgap, the electron mass, and the band offset between zincblende and wurtzite GaAs. From this multi-parameter comparison with the experimental data, we deduced that the bandgap between the F8 conduction and A valence band ranges from 1.532 to 1.539 eV in strain-free wurtzite GaAs, and estimated values of 1.507 to 1.514 eV for the F7-A bandgap.展开更多
Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by ...Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on the α-Al2O3 （0001） surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift （Δf）.展开更多
We have studied the influence of probe-sample interaction in a scanning near-field optical microscopy （SNOM） in the far field by using samples with a step structure. For a sample with a step height of - λ/4, the SN...We have studied the influence of probe-sample interaction in a scanning near-field optical microscopy （SNOM） in the far field by using samples with a step structure. For a sample with a step height of - λ/4, the SNOM image contrast between the two sides of the step changes periodically at different scan heights. For a step height of-λ/2, the image contrast remains approximately the same. The probe-sample interaction determines the SNOM image contrast here. The influence of different refractive indices of the sample has been also analysed by using a simple theoretical model.展开更多
文摘III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende and wurtzite structures. So far, this polytypism has impeded the determination of the electronic properties of the metastable wurtzite phase of GaAs, which thus remain highly controversial. In an effort to obtain new insights into this topic, we cross-correlate nanoscale spectral imaging by near-field scanning optical microscopy with a transmission electron microscopy analysis of the very same polytypic GaAs nanowire dispersed onto a Si wafer. Thus, spatially resolved photoluminescence spectra could be unambiguously assigned to nanowire segments whose structure is known with lattice-resolved accuracy. An emission energy of 1.528 eV was observed from extended zincblende segments, revealing that the dispersed nanowire was under uniaxial strain presumably due to interaction with its supporting substrate. These crucial information and the emission energy obtained for extended pure wurtzite segments were used to perform envelope function calculations of zincblende quantum disks in a wurtzite matrix as well as the inverse structure. In these calculations, we varied the fundamental bandgap, the electron mass, and the band offset between zincblende and wurtzite GaAs. From this multi-parameter comparison with the experimental data, we deduced that the bandgap between the F8 conduction and A valence band ranges from 1.532 to 1.539 eV in strain-free wurtzite GaAs, and estimated values of 1.507 to 1.514 eV for the F7-A bandgap.
文摘Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on the α-Al2O3 （0001） surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift （Δf）.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 90206003, 10374005, 10434020, 10521002, 10328407 and 90101027） and the Research Fund for the Doctoral Program of Higher Education of China （Grant No 20040001012）.
文摘We have studied the influence of probe-sample interaction in a scanning near-field optical microscopy （SNOM） in the far field by using samples with a step structure. For a sample with a step height of - λ/4, the SNOM image contrast between the two sides of the step changes periodically at different scan heights. For a step height of-λ/2, the image contrast remains approximately the same. The probe-sample interaction determines the SNOM image contrast here. The influence of different refractive indices of the sample has been also analysed by using a simple theoretical model.
