Miniaturization has been an everlasting theme in the development of semiconductor lasers.One important breakthrough in this process in recent years is the use of metal-dielectric composite structures that made truly s...Miniaturization has been an everlasting theme in the development of semiconductor lasers.One important breakthrough in this process in recent years is the use of metal-dielectric composite structures that made truly subwavelength lasers possible.Many different designs of metallic cavity semiconductor nanolasers have been proposed and demonstrated.In this article,we will review some of the most exciting progresses in this newly emerging field.In particular,we will focus on metallic-cavity nanolasers with volume smaller than wavelength cubed under electrical injection with emphasis on high-temperature operation.Such devices will serve as an important component in the future integrated nanophotonic systems due to its ultra-small size.展开更多
A novel nanolaser structure based on a hybrid plasmonic waveguide is proposed and investigated. The coupling between the metal nanowire and the high-index semiconductor nanowire with optical gain leads to a strong fie...A novel nanolaser structure based on a hybrid plasmonic waveguide is proposed and investigated. The coupling between the metal nanowire and the high-index semiconductor nanowire with optical gain leads to a strong field enhancement in the air gap region and low propagation loss, which enables the realization of lasing at the deep subwavelength scale.By optimizing the geometric parameters of the structure, a minimal lasing threshold is achieved while maintaining the capacity of ultra-deep subwavelength mode confinement. Compared with the previous coupled nanowire pair based hybrid plasmonic structure, a lower threshold can be obtained with the same geometric parameters. The proposed nanolaser can be integrated into a miniature chip as a nanoscale light source and has the potential to be widely used in optical communication and optical sensing technology.展开更多
This review addresses ongoing discussions involving nanolaser experiments,particularly those related to thresholdless lasing or few-emitter devices.A quantum-optical(quantum-mechanical active medium and radiation fiel...This review addresses ongoing discussions involving nanolaser experiments,particularly those related to thresholdless lasing or few-emitter devices.A quantum-optical(quantum-mechanical active medium and radiation field)theory is used to examine the emission properties of nanolasers under different experimental configurations.The active medium is treated as inhomogeneously broadened semiconductor quantum dots embedded in a quantum well,where carriers are introduced via current injection.Comparisons are made between a conventional laser and a nanolaser with a spontaneous emission factor of unity,as well as a laser with only a few quantum dots providing the gain.It is found that the combined exploration of intensity,coherence time,photon autocorrelation function and carrier spectral hole burning can provide a unique and consistent picture of nanolasers in the new regimes of laser operation during the transition from thermal to coherent emission.Furthermore,by reducing the number of quantum dots in the optical cavity,a clear indication of non-classical photon statistics is observed before the single-quantum-dot limit is reached.展开更多
A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite e...A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits.展开更多
Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime.The structures are based on high-finesse GaAs/AlAs micropilla...Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime.The structures are based on high-finesse GaAs/AlAs micropillar cavities,each with an active medium consisting of a layer of InGaAs quantum dots(QDs)and the distinguishing feature of having a substantial fraction of spontaneous emission channeled into one cavity mode(highβ-factor).This paper demonstrates that the usual criterion for lasing with a conventional(lowβ-factor)cavity,that is,a sharp non-linearity in the input–output curve accompanied by noticeable linewidth narrowing,has to be reinforced by the equal-time second-order photon autocorrelation function to confirm lasing.The paper also shows that the equal-time second-order photon autocorrelation function is useful for recognizing superradiance,a manifestation of the correlations possible in high-βmicrocavities operating with QDs.In terms of consolidating the collected data and identifying the physics underlying laser action,both theory and experiment suggest a sole dependence on intracavity photon number.Evidence for this assertion comes from all our measured and calculated data on emission coherence and fluctuation,for devices ranging from light-emitting diodes(LEDs)and cavity-enhanced LEDs to lasers,lying on the same two curves:one for linewidth narrowing versus intracavity photon number and the other for g(2)(0)versus intracavity photon number.展开更多
Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation ...Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of Ⅲ–V telecom nanolaser arrays with integrated distributed Bragg reflectors(DBRs) epitaxially grown on industry-standard(001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm^2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale Ⅲ–V light emitters on Si-photonics standard(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.展开更多
With the rapid development of information and communication technology,a key objective in the field of optoelectronic integrated devices is to reduce the nano-laser size and energy consumption.Photonics nanolasers are...With the rapid development of information and communication technology,a key objective in the field of optoelectronic integrated devices is to reduce the nano-laser size and energy consumption.Photonics nanolasers are unable to exceed the diffraction limit and typically exhibit low modulation rates of several GHz.In contrast,plasmonic nanolaser utilizes highly confined surface plasmon polariton(SPP)mode that can exceed diffraction limit and their strong Purcell effect can accelerate the modulation rates to several THz.Herein,we propose a parametrically tunable artificial plasmonic nanolasers based on metal–insulator–semiconductor–insulator–metal(MISIM)structure,which demonstrates its ability to compress the mode field volume toλ/14.As the pump power increases,the proposed artificial plasmonic nanolaser exhibits 20-nm-wide output spectrum.Additionally,we investigate the effects of various cavity parameters on the nanolaser’s output threshold,offering potentials for realizing low-threshold artificial plasmonic nanolasers.Moreover,we observe a blue shift in the center wavelength of the nanolaser output with thinner gain layer thickness,predominantly attributed to the increased exciton–photon coupling strength.Our work brings inspiration to several areas,including spaser-based interconnects,nano-LEDs,spontaneous emission control,miniaturization of photon condensates,eigenmode engineering of plasmonic nanolasers,and optimal design driven by artificial intelligence(AI).展开更多
Deeply subwavelength lasers(or nanolasers)are highly demanded for compact on-chip bioimaging and sensing at the nanoscale.One of the main obstacles for the development of single-particle nanolasers with all three dime...Deeply subwavelength lasers(or nanolasers)are highly demanded for compact on-chip bioimaging and sensing at the nanoscale.One of the main obstacles for the development of single-particle nanolasers with all three dimensions shorter than the emitting wavelength in the visible range is the high lasing thresholds and the resulting overheating.Here we ex-ploit exciton-polariton condensation and mirror-image Mie modes in a cuboid CsPbBr3 nanoparticle to achieve coherent emission at the visible wavelength of around 0.53μm from its ultra-small(≈0.007μm3 or≈λ3/20)semiconductor nanocav-ity.The polaritonic nature of the emission from the nanocavity localized in all three dimensions is proven by direct com-parison with corresponding one-dimensional and two-dimensional waveguiding systems with similar material parameters.Such a deeply subwavelength nanolaser is enabled not only by the high values for exciton binding energy(≈35 meV),re-fractive index(>2.5 at low temperature),and luminescence quantum yield of CsPbBr3,but also by the optimization of po-laritons condensation on the Mie resonances with quality factors improved by the metallic substrate.Moreover,the key parameters for optimal lasing conditions are intermode free spectral range and phonons spectrum in CsPbBr3,which govern polaritons condensation path.Such chemically synthesized colloidal CsPbBr3 nanolasers can be potentially de-posited on arbitrary surfaces,which makes them a versatile tool for integration with various on-chip systems.展开更多
A new nanolaser concept using silicon quantum dots （QDs） is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on S...A new nanolaser concept using silicon quantum dots （QDs） is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional （2D） photonic crystal can be used to select the model in the nanolaser.展开更多
基金Research reported in this article in the authors group was supported by the Defense Advanced Research Project Agency program Nanoscale Architectures of Coherent Hyper-Optical Sources(grant no.W911-NF07-1-0314)by the Air Force Office of Scientific Research(grant no.FA9550-10-1-0444,Gernot Pomrenke)We thank Martin Hill for his collaboration over the last few years.
文摘Miniaturization has been an everlasting theme in the development of semiconductor lasers.One important breakthrough in this process in recent years is the use of metal-dielectric composite structures that made truly subwavelength lasers possible.Many different designs of metallic cavity semiconductor nanolasers have been proposed and demonstrated.In this article,we will review some of the most exciting progresses in this newly emerging field.In particular,we will focus on metallic-cavity nanolasers with volume smaller than wavelength cubed under electrical injection with emphasis on high-temperature operation.Such devices will serve as an important component in the future integrated nanophotonic systems due to its ultra-small size.
基金Project supported by the National Natural Science Foundation of China(Grant No.61172044)the Natural Science Foundation of Hebei Province,China(Grant No.F2014501150)
文摘A novel nanolaser structure based on a hybrid plasmonic waveguide is proposed and investigated. The coupling between the metal nanowire and the high-index semiconductor nanowire with optical gain leads to a strong field enhancement in the air gap region and low propagation loss, which enables the realization of lasing at the deep subwavelength scale.By optimizing the geometric parameters of the structure, a minimal lasing threshold is achieved while maintaining the capacity of ultra-deep subwavelength mode confinement. Compared with the previous coupled nanowire pair based hybrid plasmonic structure, a lower threshold can be obtained with the same geometric parameters. The proposed nanolaser can be integrated into a miniature chip as a nanoscale light source and has the potential to be widely used in optical communication and optical sensing technology.
基金supported by the National Natural Science Foundation of China(62090035,U19A2090,61905071)the Key Program of the Hunan Provincial Science and Technology Department(2019XK2001,2020XK2001)+2 种基金the International Science and Technology Innovation Cooperation Base of Hunan Province(2018WK4004)the China Postdoctoral Science Foundation(2022TQ0100)the National Key Research and 288 Development Program of China(2022YFB3604701).
基金funded by the US Department of Energy,Office of Science,Office of Basic Energy Sciences.FJ and CG acknowledge financial support from the Deutsche Forschungsgemeinschaft.
文摘This review addresses ongoing discussions involving nanolaser experiments,particularly those related to thresholdless lasing or few-emitter devices.A quantum-optical(quantum-mechanical active medium and radiation field)theory is used to examine the emission properties of nanolasers under different experimental configurations.The active medium is treated as inhomogeneously broadened semiconductor quantum dots embedded in a quantum well,where carriers are introduced via current injection.Comparisons are made between a conventional laser and a nanolaser with a spontaneous emission factor of unity,as well as a laser with only a few quantum dots providing the gain.It is found that the combined exploration of intensity,coherence time,photon autocorrelation function and carrier spectral hole burning can provide a unique and consistent picture of nanolasers in the new regimes of laser operation during the transition from thermal to coherent emission.Furthermore,by reducing the number of quantum dots in the optical cavity,a clear indication of non-classical photon statistics is observed before the single-quantum-dot limit is reached.
基金Project supported by the National Basic Research Program of China (973 Program) (Grant No. 2011CBA00608)the National Natural Science Foundation of China (Grant Nos. 61036010,60906027,60906028,and 61036010)
文摘A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits.
基金the European Research Council under the Seventh Framework ERC Grant Agreement No.615613 of the European Unionthe German Research Foundation via the projects RE2974/5-1,Ka23187-1 and JA 619/10-3+3 种基金the US Department of Energy under Contract No.DE-AC04-94AL85000the Technical University Berlin for hospitality and the German Research Foundation via collaborative research center 787 for travel supportsupport from the German Science Foundation(DFG)support from the German Federal Ministry of Education and Research(BMBF).
文摘Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime.The structures are based on high-finesse GaAs/AlAs micropillar cavities,each with an active medium consisting of a layer of InGaAs quantum dots(QDs)and the distinguishing feature of having a substantial fraction of spontaneous emission channeled into one cavity mode(highβ-factor).This paper demonstrates that the usual criterion for lasing with a conventional(lowβ-factor)cavity,that is,a sharp non-linearity in the input–output curve accompanied by noticeable linewidth narrowing,has to be reinforced by the equal-time second-order photon autocorrelation function to confirm lasing.The paper also shows that the equal-time second-order photon autocorrelation function is useful for recognizing superradiance,a manifestation of the correlations possible in high-βmicrocavities operating with QDs.In terms of consolidating the collected data and identifying the physics underlying laser action,both theory and experiment suggest a sole dependence on intracavity photon number.Evidence for this assertion comes from all our measured and calculated data on emission coherence and fluctuation,for devices ranging from light-emitting diodes(LEDs)and cavity-enhanced LEDs to lasers,lying on the same two curves:one for linewidth narrowing versus intracavity photon number and the other for g(2)(0)versus intracavity photon number.
基金Research Grants Council,University Grants Committee(16212115,16245216,AoE/P02/12)Innovation and Technology Fund(ITS/273/16FP)William Mong Institute of Nano Science and Technology(WMINST19/SC04)
文摘Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of Ⅲ–V telecom nanolaser arrays with integrated distributed Bragg reflectors(DBRs) epitaxially grown on industry-standard(001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm^2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale Ⅲ–V light emitters on Si-photonics standard(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12174037,12204061,12204030,and 62375003)the Fundamental Research Funds for the Central Universities,China(Grant No.2022XD-A09)the Fund from the State Key Laboratory of Information Photonics and Optical Communication,China(Grant No.IPOC2021ZZ02)。
文摘With the rapid development of information and communication technology,a key objective in the field of optoelectronic integrated devices is to reduce the nano-laser size and energy consumption.Photonics nanolasers are unable to exceed the diffraction limit and typically exhibit low modulation rates of several GHz.In contrast,plasmonic nanolaser utilizes highly confined surface plasmon polariton(SPP)mode that can exceed diffraction limit and their strong Purcell effect can accelerate the modulation rates to several THz.Herein,we propose a parametrically tunable artificial plasmonic nanolasers based on metal–insulator–semiconductor–insulator–metal(MISIM)structure,which demonstrates its ability to compress the mode field volume toλ/14.As the pump power increases,the proposed artificial plasmonic nanolaser exhibits 20-nm-wide output spectrum.Additionally,we investigate the effects of various cavity parameters on the nanolaser’s output threshold,offering potentials for realizing low-threshold artificial plasmonic nanolasers.Moreover,we observe a blue shift in the center wavelength of the nanolaser output with thinner gain layer thickness,predominantly attributed to the increased exciton–photon coupling strength.Our work brings inspiration to several areas,including spaser-based interconnects,nano-LEDs,spontaneous emission control,miniaturization of photon condensates,eigenmode engineering of plasmonic nanolasers,and optimal design driven by artificial intelligence(AI).
基金supported by the Federal Program'Priority 2030'and NSFC(Project 62350610272)A.K.Samusev acknowledges Deutsche Forschungsgemeinschaft-project No.529710370。
文摘Deeply subwavelength lasers(or nanolasers)are highly demanded for compact on-chip bioimaging and sensing at the nanoscale.One of the main obstacles for the development of single-particle nanolasers with all three dimensions shorter than the emitting wavelength in the visible range is the high lasing thresholds and the resulting overheating.Here we ex-ploit exciton-polariton condensation and mirror-image Mie modes in a cuboid CsPbBr3 nanoparticle to achieve coherent emission at the visible wavelength of around 0.53μm from its ultra-small(≈0.007μm3 or≈λ3/20)semiconductor nanocav-ity.The polaritonic nature of the emission from the nanocavity localized in all three dimensions is proven by direct com-parison with corresponding one-dimensional and two-dimensional waveguiding systems with similar material parameters.Such a deeply subwavelength nanolaser is enabled not only by the high values for exciton binding energy(≈35 meV),re-fractive index(>2.5 at low temperature),and luminescence quantum yield of CsPbBr3,but also by the optimization of po-laritons condensation on the Mie resonances with quality factors improved by the metallic substrate.Moreover,the key parameters for optimal lasing conditions are intermode free spectral range and phonons spectrum in CsPbBr3,which govern polaritons condensation path.Such chemically synthesized colloidal CsPbBr3 nanolasers can be potentially de-posited on arbitrary surfaces,which makes them a versatile tool for integration with various on-chip systems.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60966002)the National Key Laboratory Fund of Surface Physics at Fudan University,(Grant No. 20090606)
文摘A new nanolaser concept using silicon quantum dots （QDs） is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional （2D） photonic crystal can be used to select the model in the nanolaser.
