To systematically incorporate multiple influencing factors,the coupled-state frequency memory(Co-SFM)network is proposed.This model integrates Copula estimation with neural networks,fusing multilevel data information,...To systematically incorporate multiple influencing factors,the coupled-state frequency memory(Co-SFM)network is proposed.This model integrates Copula estimation with neural networks,fusing multilevel data information,which is then fed into downstream learning modules.Co-SFM employs an upstream fusion module to incorporate multilevel data,thereby constructing a macro-plate-micro data structure.This configuration helps identify and integrate characteristics from different data levels,facilitating a deeper understanding of the internal links within the financial system.In the downstream model,Co-SFM uses a state-frequency memory network to mine hidden frequency information within stock prices,and the multifrequency patterns of sequential data are modeled.Empirical results show that Co-SFM s prediction accuracy for stock price trends is significantly better than that of other models.This is especially evident in multistep medium and long-term trend predictions,where integrating multilevel data results in notably improved accuracy.展开更多
As a result of the interplay between advances in computer hardware, software, and algorithm, we are now in a new era of large-scale reservoir simulation, which focuses on accurate flow description, fine reservoir char...As a result of the interplay between advances in computer hardware, software, and algorithm, we are now in a new era of large-scale reservoir simulation, which focuses on accurate flow description, fine reservoir characterization, efficient nonlinear/linear solvers, and parallel implementation. In this paper, we discuss a multilevel preconditioner in a new-generation simulator and its implementation on multicore computers. This preconditioner relies on the method of subspace corrections to solve large-scale linear systems arising from fully implicit methods in reservoir simulations. We investigate the parallel efficiency and robustness of the proposed method by applying it to million-cell benchmark problems.展开更多
Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multi...Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multilevel cell(MLC)operation,potentially causing thermal crosstalk issues and phase separation issues,respectively.To address these challenges,we propose a high-aspect-ratio(25:1)lateral nanowire(NW)PCM device with conventional chalcogenide Ge_(2)Sb_(2)Te_(5)(GST-225)to realize stable MLC operations,i.e.,low intra-and inter-cell variability and low resistance drift(coefficient=0.009).The improved MLC performance is attributed to the high aspect ratio,which enables precise control of the amorphous region because of sidewall confinement,as confirmed by transmission electron microscopy analysis.In summary,the NW devices provide guidance for the design of future high-aspect-ratio threedimensional PCM devices with MLC capability.展开更多
The recording density of multilevel photochromic memory is limited by the signal-to-noise ratio （SNR） of the readout signal. In this paper, shot noise and material noise are investigated through theoretical analysis...The recording density of multilevel photochromic memory is limited by the signal-to-noise ratio （SNR） of the readout signal. In this paper, shot noise and material noise are investigated through theoretical analysis of SNR. When the bandwidth of a system is less than 1MHz, the material noise takes a prominent position; when the bandwidth of the system is more than 10MHz, the shot noise becomes dominant. The thickness of recording layer can be optimized to maximize the SNR and reduce the influence of the bandwidth of the system on SNR.展开更多
Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability...Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.展开更多
Based on the multilevel memory architectural high performance characteristics of the most popular microprocessors, this paper summarized and discussed some key techniques for parallelization and optimization of seven ...Based on the multilevel memory architectural high performance characteristics of the most popular microprocessors, this paper summarized and discussed some key techniques for parallelization and optimization of seven typical applied codes and model physical problems under both message passing MPI and shared memory OpenMP standard parallel programming paradigms. Typical benchmark results under six parallel computers are also given in detail in this paper.展开更多
In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-ste...In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.展开更多
The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observ...The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.展开更多
基金The National Natural Science Foundation of China(No.72173018).
文摘To systematically incorporate multiple influencing factors,the coupled-state frequency memory(Co-SFM)network is proposed.This model integrates Copula estimation with neural networks,fusing multilevel data information,which is then fed into downstream learning modules.Co-SFM employs an upstream fusion module to incorporate multilevel data,thereby constructing a macro-plate-micro data structure.This configuration helps identify and integrate characteristics from different data levels,facilitating a deeper understanding of the internal links within the financial system.In the downstream model,Co-SFM uses a state-frequency memory network to mine hidden frequency information within stock prices,and the multifrequency patterns of sequential data are modeled.Empirical results show that Co-SFM s prediction accuracy for stock price trends is significantly better than that of other models.This is especially evident in multistep medium and long-term trend predictions,where integrating multilevel data results in notably improved accuracy.
基金support through PetroChina New-generation Reservoir Simulation Software (2011A-1010)the Program of Research on Continental Sedimentary Oil Reservoir Simulation (z121100004912001)+7 种基金founded by Beijing Municipal Science & Technology Commission and PetroChina Joint Research Funding12HT1050002654partially supported by the NSFC Grant 11201398Hunan Provincial Natural Science Foundation of China Grant 14JJ2063Specialized Research Fund for the Doctoral Program of Higher Education of China Grant 20124301110003partially supported by the Dean’s Startup Fund, Academy of Mathematics and System Sciences and the State High Tech Development Plan of China (863 Program 2012AA01A309partially supported by NSFC Grant 91130002Program for Changjiang Scholars and Innovative Research Team in University of China Grant IRT1179the Scientific Research Fund of the Hunan Provincial Education Department of China Grant 12A138
文摘As a result of the interplay between advances in computer hardware, software, and algorithm, we are now in a new era of large-scale reservoir simulation, which focuses on accurate flow description, fine reservoir characterization, efficient nonlinear/linear solvers, and parallel implementation. In this paper, we discuss a multilevel preconditioner in a new-generation simulator and its implementation on multicore computers. This preconditioner relies on the method of subspace corrections to solve large-scale linear systems arising from fully implicit methods in reservoir simulations. We investigate the parallel efficiency and robustness of the proposed method by applying it to million-cell benchmark problems.
基金supported by the National Natural Science Foundation of China(62174065)the Key Research and Development Plan of Hubei Province(2020BAB007)+1 种基金Hubei Provincial Natural Science Foundation(2021CFA038)the support from Hubei Key Laboratory of Advanced Memories&Hubei Engineering Research Center on Microelectronics。
文摘Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multilevel cell(MLC)operation,potentially causing thermal crosstalk issues and phase separation issues,respectively.To address these challenges,we propose a high-aspect-ratio(25:1)lateral nanowire(NW)PCM device with conventional chalcogenide Ge_(2)Sb_(2)Te_(5)(GST-225)to realize stable MLC operations,i.e.,low intra-and inter-cell variability and low resistance drift(coefficient=0.009).The improved MLC performance is attributed to the high aspect ratio,which enables precise control of the amorphous region because of sidewall confinement,as confirmed by transmission electron microscopy analysis.In summary,the NW devices provide guidance for the design of future high-aspect-ratio threedimensional PCM devices with MLC capability.
基金Project supported by the State Key Development Program For Basic Research of China （Grant No 19990330） and the National Natural Science Foundation of China （Grant No 60577035）.
文摘The recording density of multilevel photochromic memory is limited by the signal-to-noise ratio （SNR） of the readout signal. In this paper, shot noise and material noise are investigated through theoretical analysis of SNR. When the bandwidth of a system is less than 1MHz, the material noise takes a prominent position; when the bandwidth of the system is more than 10MHz, the shot noise becomes dominant. The thickness of recording layer can be optimized to maximize the SNR and reduce the influence of the bandwidth of the system on SNR.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62205231 and 22002102)the Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant No.KYCX223271)Jiangsu Key Laboratory for Environment Functional Materials。
文摘Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.
文摘Based on the multilevel memory architectural high performance characteristics of the most popular microprocessors, this paper summarized and discussed some key techniques for parallelization and optimization of seven typical applied codes and model physical problems under both message passing MPI and shared memory OpenMP standard parallel programming paradigms. Typical benchmark results under six parallel computers are also given in detail in this paper.
基金supported by the National Natural Science Foundation of China(Grant Nos.61664001,61574070,and 61306148)the Application Research and Development Plan of Gansu Academy of Sciences,China(Grant Nos.2015JK-11 and 2015JK-01)
文摘In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.
基金Project supported by the Ministry of Science and Technology of China(Grant Nos.2016YFA0203800,2016YFA0201803,and 2018YFB0407502)the National Natural Science Foundation of China(Grant Nos.61522408,61334007,and 61521064)+1 种基金Beijing Municipal Science&Technology Commission Program,China(Grant No.Z161100000216153)Huawei Data Center Technology Laboratory
文摘The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.
