Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to me...Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to meet these requirements. A dual-path PAM is designed for high-power mode （HPM）, medium-power mode （MPM）, and low-power mode （LPM） operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor （HBT） process and the 0.18-μm complementary metal-oxide semiconductor （CMOS） process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and 240 dBc adjacent channel leakage ratio 1 （ACLR1）. In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1.展开更多
A reconfigurable multi-mode direct-conversion transmitter （TX） with integrated frequency synthe sizer （FS） is presented. The TX as well as the FS is designed with a flexible architecture and frequency plan, which ...A reconfigurable multi-mode direct-conversion transmitter （TX） with integrated frequency synthe sizer （FS） is presented. The TX as well as the FS is designed with a flexible architecture and frequency plan, which helps to support all the 433/868/915 MHz ISM band signals, with the reconfigurable bandwidth from 250 kHz to 2 MHz. In order to save power and chip area, only one 1.8 GHz VCO is adopted to cover the whole frequency range. All the operation modes can be regulated in real time by configuring the integrated register-bank through an SPI interface. Implemented in 180 nm CMOS, the FS achieves a frequency coverage of 320-460 MHz and 620- 920 MHz. The lowest phase noise can be -107 dBc/Hz at a 100 kHz offset and-126 dBc/Hz at a 1 MHz offset. The transmitter features a 10.2 dBm peak output power with a ＋9.5 dBm 1-dB-compression point and 250 kHz/500 kHz/1 MHz/2 MHz reconfigurable signal bandwidth.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61201244)
文摘Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to meet these requirements. A dual-path PAM is designed for high-power mode （HPM）, medium-power mode （MPM）, and low-power mode （LPM） operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor （HBT） process and the 0.18-μm complementary metal-oxide semiconductor （CMOS） process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and 240 dBc adjacent channel leakage ratio 1 （ACLR1）. In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1.
文摘A reconfigurable multi-mode direct-conversion transmitter （TX） with integrated frequency synthe sizer （FS） is presented. The TX as well as the FS is designed with a flexible architecture and frequency plan, which helps to support all the 433/868/915 MHz ISM band signals, with the reconfigurable bandwidth from 250 kHz to 2 MHz. In order to save power and chip area, only one 1.8 GHz VCO is adopted to cover the whole frequency range. All the operation modes can be regulated in real time by configuring the integrated register-bank through an SPI interface. Implemented in 180 nm CMOS, the FS achieves a frequency coverage of 320-460 MHz and 620- 920 MHz. The lowest phase noise can be -107 dBc/Hz at a 100 kHz offset and-126 dBc/Hz at a 1 MHz offset. The transmitter features a 10.2 dBm peak output power with a ＋9.5 dBm 1-dB-compression point and 250 kHz/500 kHz/1 MHz/2 MHz reconfigurable signal bandwidth.
