A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. ...A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.展开更多
As two independent problems,scheduling for parts fabrication line and sequencing for mixed-model assembly line have been addressed respectively by many researchers.However,these two problems should be considered simul...As two independent problems,scheduling for parts fabrication line and sequencing for mixed-model assembly line have been addressed respectively by many researchers.However,these two problems should be considered simultaneously to improve the efficiency of the whole fabrication/assembly systems.By far,little research effort is devoted to sequencing problems for mixed-model fabrication/assembly systems.This paper is concerned about the sequencing problems in pull production systems which are composed of one mixed-model assembly line with limited intermediate buffers and two flexible parts fabrication flow lines with identical parallel machines and limited intermediate buffers.Two objectives are considered simultaneously：minimizing the total variation in parts consumption in the assembly line and minimizing the total makespan cost in the fabrication/assembly system.The integrated optimization framework,mathematical models and the method to construct the complete schedules for the fabrication lines according to the production sequences for the first stage in fabrication lines are presented.Since the above problems are non-deterministic polynomial-hard（NP-hard）,a modified multi-objective genetic algorithm is proposed for solving the models,in which a method to generate the production sequences for the fabrication lines from the production sequences for the assembly line and a method to generate the initial population are put forward,new selection,crossover and mutation operators are designed,and Pareto ranking method and sharing function method are employed to evaluate the individuals＇ fitness.The feasibility and efficiency of the multi-objective genetic algorithm is shown by computational comparison with a multi-objective simulated annealing algorithm.The sequencing problems for mixed-model production systems can be solved effectively by the proposed modified multi-objective genetic algorithm.展开更多
In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the...In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing （PDA） times. The equivalent oxide thickness （EOT） decreases when the annealing time（s） change from 1 to 2. Furthermore, the characteristics of SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied systematically. The increase of the PDA time（s） from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.展开更多
基金supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601)the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)
文摘A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.
基金supported by National Natural Science Foundation of China (Grant No.50875101)National Hi-tech Research and Development Program of China (863 Program,Grant No.2007AA04Z186)
文摘As two independent problems,scheduling for parts fabrication line and sequencing for mixed-model assembly line have been addressed respectively by many researchers.However,these two problems should be considered simultaneously to improve the efficiency of the whole fabrication/assembly systems.By far,little research effort is devoted to sequencing problems for mixed-model fabrication/assembly systems.This paper is concerned about the sequencing problems in pull production systems which are composed of one mixed-model assembly line with limited intermediate buffers and two flexible parts fabrication flow lines with identical parallel machines and limited intermediate buffers.Two objectives are considered simultaneously：minimizing the total variation in parts consumption in the assembly line and minimizing the total makespan cost in the fabrication/assembly system.The integrated optimization framework,mathematical models and the method to construct the complete schedules for the fabrication lines according to the production sequences for the first stage in fabrication lines are presented.Since the above problems are non-deterministic polynomial-hard（NP-hard）,a modified multi-objective genetic algorithm is proposed for solving the models,in which a method to generate the production sequences for the fabrication lines from the production sequences for the assembly line and a method to generate the initial population are put forward,new selection,crossover and mutation operators are designed,and Pareto ranking method and sharing function method are employed to evaluate the individuals＇ fitness.The feasibility and efficiency of the multi-objective genetic algorithm is shown by computational comparison with a multi-objective simulated annealing algorithm.The sequencing problems for mixed-model production systems can be solved effectively by the proposed modified multi-objective genetic algorithm.
基金supported by the National High Technology Research and Development Program of China(Grant No.2015AA016501)the National Natural Science Foundation of China(Grant No.61306129)
文摘In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing （PDA） times. The equivalent oxide thickness （EOT） decreases when the annealing time（s） change from 1 to 2. Furthermore, the characteristics of SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied systematically. The increase of the PDA time（s） from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.
