Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and ato...Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and atomic-force microscopy reveal that the coatings obtained are of nanocluster structure with the cubic ordering.In this case the nanoclusters reach several hundreds of nanometers in size.An assumption was made that on laser ablation of ZrO2 thermostabilization may take place where a minimum of the surface energy is attained just at cubic ordering.展开更多
分别对 P 型单晶硅电解掺氢的电极制作、实验装置、电解液的选择、电解后浅杂质浓度的分布等进行了研究。并用 G—V 法证明了分别以 H_2SO_4和H_3PO_4为电解掖时对 P 型单晶硅电解掺氢都能使硅片表面附近几个微米范围内浅杂质浓度下降,...分别对 P 型单晶硅电解掺氢的电极制作、实验装置、电解液的选择、电解后浅杂质浓度的分布等进行了研究。并用 G—V 法证明了分别以 H_2SO_4和H_3PO_4为电解掖时对 P 型单晶硅电解掺氢都能使硅片表面附近几个微米范围内浅杂质浓度下降,在 H_3PO_4中掺氢效果较 H_2SO_4中更为显著。展开更多
基金This work is financially supported by the Russian Foundation for Basic Research (No 04-02-9700and 06-02-9600)by the Presidium of the Far Eastern Branch of the Russian Academy of Sciences(No 06-III-A-02-034)
文摘Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and atomic-force microscopy reveal that the coatings obtained are of nanocluster structure with the cubic ordering.In this case the nanoclusters reach several hundreds of nanometers in size.An assumption was made that on laser ablation of ZrO2 thermostabilization may take place where a minimum of the surface energy is attained just at cubic ordering.
文摘分别对 P 型单晶硅电解掺氢的电极制作、实验装置、电解液的选择、电解后浅杂质浓度的分布等进行了研究。并用 G—V 法证明了分别以 H_2SO_4和H_3PO_4为电解掖时对 P 型单晶硅电解掺氢都能使硅片表面附近几个微米范围内浅杂质浓度下降,在 H_3PO_4中掺氢效果较 H_2SO_4中更为显著。
