The photoelectron property is directly related to the light-energy conversion efficiency of solar cells. In this paper, the photoelectron dynamic of semiconductor was analyzed. The diffusion of electrons has influence...The photoelectron property is directly related to the light-energy conversion efficiency of solar cells. In this paper, the photoelectron dynamic of semiconductor was analyzed. The diffusion of electrons has influence on the dielectric function of the solar cell material. And the amplitude variance of the imaginary and real part of the dielectric function is in direct proportion to the dynamic process of free and shallow-trapped electrons. Based on the untouched detection technique, the method is present to detect the amplitude change of the microwave signal which is passing through the material whose dielectric function changes after exposure. A 35 GHz oscillator was used as a microwave source. The absorption and dispersion microwave signals, which contain the dynamic information of free and shallow-trapped electron signal, are split respectively with phase-sensitive instrument. The photoelectron character of n-type Si(100) thin film was investigated by the novel equipment, and the lifetime of different kinds of electrons with the resolution of 1 ns was obtained. The equipment can be directly used in the study of the optoelectronic conversion mechanism of solar cells.展开更多
The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of photoelectrons in sulfur-sensitized silver halide crystals. The time-resolution spectrum of free electrons and shallow-tra...The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of photoelectrons in sulfur-sensitized silver halide crystals. The time-resolution spectrum of free electrons and shallow-trapped electrons generated in sulfur-sensitized AgBrl crystals has been obtained. The relationship of the trapping effect of sensitization centers Ag2S and sensitization time or temperature in emulsions has been duscussed. With the increase in the sensitization time and temperature, the trap effect of sulfur sensitization centers varies from hole trap to shallow electron trap, and deep electron trap.展开更多
基金This work was financially supported by the National Natural Science Foundation of China (No.10274017)the Natural Science Foundation of Hebei Province, China (No.103097, E2005000131)
文摘The photoelectron property is directly related to the light-energy conversion efficiency of solar cells. In this paper, the photoelectron dynamic of semiconductor was analyzed. The diffusion of electrons has influence on the dielectric function of the solar cell material. And the amplitude variance of the imaginary and real part of the dielectric function is in direct proportion to the dynamic process of free and shallow-trapped electrons. Based on the untouched detection technique, the method is present to detect the amplitude change of the microwave signal which is passing through the material whose dielectric function changes after exposure. A 35 GHz oscillator was used as a microwave source. The absorption and dispersion microwave signals, which contain the dynamic information of free and shallow-trapped electron signal, are split respectively with phase-sensitive instrument. The photoelectron character of n-type Si(100) thin film was investigated by the novel equipment, and the lifetime of different kinds of electrons with the resolution of 1 ns was obtained. The equipment can be directly used in the study of the optoelectronic conversion mechanism of solar cells.
基金This work was supported by the National Natural Science Foundation of China(Grant Nos.10354001,10274017)the Key Science and Technology Project of Ministry of Education of China(Grant No.01011)the Doctor Foundation of Hebei Province of China(Grant No.01547012D).
文摘The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of photoelectrons in sulfur-sensitized silver halide crystals. The time-resolution spectrum of free electrons and shallow-trapped electrons generated in sulfur-sensitized AgBrl crystals has been obtained. The relationship of the trapping effect of sensitization centers Ag2S and sensitization time or temperature in emulsions has been duscussed. With the increase in the sensitization time and temperature, the trap effect of sulfur sensitization centers varies from hole trap to shallow electron trap, and deep electron trap.
