To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was inves...To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation.The best switching speed of the new structures is 120%faster than that of the rectangular 3-terminal device.The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.2009AA01 A403)the Foundation for Key Program of Ministry of Education,China(No.20091770305)the Fok Ying-Tong Education Foundation,China(No.114011)
文摘To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation.The best switching speed of the new structures is 120%faster than that of the rectangular 3-terminal device.The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.
