Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on gla...Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.展开更多
Optical metamaterials can concentrate light interaction with quantum objects. In this paper, into extremely tiny volumes to enhance their a cylindrical microcavity based on the Au-dielectric-Au sandwiched structure i...Optical metamaterials can concentrate light interaction with quantum objects. In this paper, into extremely tiny volumes to enhance their a cylindrical microcavity based on the Au-dielectric-Au sandwiched structure is proposed. Numerical study shows that the cylindrical microcavity has the strong ability of localizing light and confining 10^3- - 10^4-fold enhancement of the electromagnetic energy density, which contains the most energy of the incoming light. The enhancement factor of energy density G inside the cavity shows the regularities as the change in the thickness of the dielectric slab, dielectric constant, and the radius of gold disk. At the normal incidence of electromagnetic radiation, the obtained reflection spectra operate in the range from 4.8 μm to 6μm and with the absorption efficiency C （C=1-Rmin）, which can reach 99% by optimizing the structure＇s geometry parameters, and the dielectric constant. Due to the symmetry of the cylindrical microcavities, this structure is insensitive to the polarization of the incident wave. The proposed optical metamaterials will have potential applications in the surface enhanced spectroscopy, new plasmonic detectors, bio-sensing, solar cells, etc.展开更多
We numerically study the near field enhancement and absorption properties inside the double cylindrical microcavities based on triple-band metamaterial absorber. The compact single unit cell consists of concentric gol...We numerically study the near field enhancement and absorption properties inside the double cylindrical microcavities based on triple-band metamaterial absorber. The compact single unit cell consists of concentric gold rings each with a gold disk in the center, and a metallic ground plane separated by a dielectric layer. At the normal incidence of electromagnetic radiation, the obtained reflection spectra show that the resonance frequencies of the double microcavities are 16.65 THz, 20.65 THz, and 25.65THz, respectively. We also calculate the values of contrast C （C = 1 - Rmin）, which can reach 95%, 97%, and 95% at the corresponding frequencies by optimizing the geometry parameters of structure. Moreover, we demon- strate that the multilayer structure with subwavelength electromagnetic confinement allows 104 -105-fold enhancement of the electromagnetic energy density inside the double cavities, which contains the most energy of the incoming electro- magnetic radiation. Moreover, the proposed structure will be insensitive to the polarization of the incident wave due to the symmetry of the double cylindrical microcavities. The proposed optical metamaterial is a promising candidate as an absorbing element in scientific and technical applications because of its extreme confinement, multiband absorptions, and polarization insensitivity.展开更多
A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.
Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport th...Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted ZnO film are provided by I-V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal-seconductor-metal （M-S-M） model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.展开更多
Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. T...Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012cm Hz1∕2W-1at 5 V bias. Furthermore,the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices.展开更多
A two-dimensional model of a metal-semiconductor-metal （MSM） ZnO-based photodetector （PD） is developed. The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distri...A two-dimensional model of a metal-semiconductor-metal （MSM） ZnO-based photodetector （PD） is developed. The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distribution inside the structure, the transversal and longitudinal distributions of the electric field, and the distribution of carrier concentration. The ohmicity of the contact has been confirmed. The dark current of MSM PD based ZnO for different structural dimensions are likewise calculated. The calculations are comparable with the experimental results. Therefore, the influence with respect to parameters s （finger spacing） and w （finger width） is studied, which results in the optimization of these parameters. The best optimization found to concur with the experimental results is s = 16 μm, w = 16 μm, l = 250 μm, L = 350 μm, where l is the finger length and L is the length of the structure. This optimization provides a simulated dark current eaual to 24.5 nA at the polarization of 3 V.展开更多
Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteri...Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.展开更多
Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGa...Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.展开更多
基金support by Indo-Iraq Cultural Exchange Program of ICCR (Indian Council for Cultural Relations)
文摘Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.
文摘Optical metamaterials can concentrate light interaction with quantum objects. In this paper, into extremely tiny volumes to enhance their a cylindrical microcavity based on the Au-dielectric-Au sandwiched structure is proposed. Numerical study shows that the cylindrical microcavity has the strong ability of localizing light and confining 10^3- - 10^4-fold enhancement of the electromagnetic energy density, which contains the most energy of the incoming light. The enhancement factor of energy density G inside the cavity shows the regularities as the change in the thickness of the dielectric slab, dielectric constant, and the radius of gold disk. At the normal incidence of electromagnetic radiation, the obtained reflection spectra operate in the range from 4.8 μm to 6μm and with the absorption efficiency C （C=1-Rmin）, which can reach 99% by optimizing the structure＇s geometry parameters, and the dielectric constant. Due to the symmetry of the cylindrical microcavities, this structure is insensitive to the polarization of the incident wave. The proposed optical metamaterials will have potential applications in the surface enhanced spectroscopy, new plasmonic detectors, bio-sensing, solar cells, etc.
文摘We numerically study the near field enhancement and absorption properties inside the double cylindrical microcavities based on triple-band metamaterial absorber. The compact single unit cell consists of concentric gold rings each with a gold disk in the center, and a metallic ground plane separated by a dielectric layer. At the normal incidence of electromagnetic radiation, the obtained reflection spectra show that the resonance frequencies of the double microcavities are 16.65 THz, 20.65 THz, and 25.65THz, respectively. We also calculate the values of contrast C （C = 1 - Rmin）, which can reach 95%, 97%, and 95% at the corresponding frequencies by optimizing the geometry parameters of structure. Moreover, we demon- strate that the multilayer structure with subwavelength electromagnetic confinement allows 104 -105-fold enhancement of the electromagnetic energy density inside the double cavities, which contains the most energy of the incoming electro- magnetic radiation. Moreover, the proposed structure will be insensitive to the polarization of the incident wave due to the symmetry of the double cylindrical microcavities. The proposed optical metamaterial is a promising candidate as an absorbing element in scientific and technical applications because of its extreme confinement, multiband absorptions, and polarization insensitivity.
文摘A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11274082 and 51172194)the Excellent Young Scientist Research Award Fund of Shandong Province,China(Grant No.BS2011CL002)
文摘Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted ZnO film are provided by I-V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal-seconductor-metal （M-S-M） model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.
基金supported by the Air Force Office of Scientific Research (Grant No. FA9550-10-1-0136)NASA (Grant No. 242026-1BBX11AQ36A)+1 种基金supported by a University of Arkansas Honors College Undergraduate Research grantthe Microelectronics–Photonics program at the University of Arkansas for the COMSOL license
文摘Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012cm Hz1∕2W-1at 5 V bias. Furthermore,the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices.
文摘A two-dimensional model of a metal-semiconductor-metal （MSM） ZnO-based photodetector （PD） is developed. The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distribution inside the structure, the transversal and longitudinal distributions of the electric field, and the distribution of carrier concentration. The ohmicity of the contact has been confirmed. The dark current of MSM PD based ZnO for different structural dimensions are likewise calculated. The calculations are comparable with the experimental results. Therefore, the influence with respect to parameters s （finger spacing） and w （finger width） is studied, which results in the optimization of these parameters. The best optimization found to concur with the experimental results is s = 16 μm, w = 16 μm, l = 250 μm, L = 350 μm, where l is the finger length and L is the length of the structure. This optimization provides a simulated dark current eaual to 24.5 nA at the polarization of 3 V.
文摘Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.
基金supported by the National Natural Science Foundation of China(No.61006052)the Fundamental Research Funds for the Central Universities(No.K5051325009)
文摘Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.
