The analytical micromagnetics and numerical simulations were used to investigate the domain wall structure during the magnetization reversal in nanowires. Micromagnetic analysis shows that the domain wall structure is...The analytical micromagnetics and numerical simulations were used to investigate the domain wall structure during the magnetization reversal in nanowires. Micromagnetic analysis shows that the domain wall structure is mainly determined by the competition between the demagnetization energy and exchange energy. The wall with vortex magnetization structure in cross-section is energetically more favorable for wires with large diameter. With the reduction of diameter the exchange energy increases. At a critical diameter the vortex structure can not be sustained and the transition from vortex wall to transverse wall occurs. The critical diameters for this transition are about 40 nm for Ni wire and 20 nm for Fe wire, respectively. A series of micromagnetic simulations on the cone-shaped wire confirm the analytical results. The simulations also show that during the reversal process the vortex domain wall moves much faster than the transverse one.展开更多
Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coup...Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.展开更多
基金Foundation item: Project(60571043) supported by the National Natural Science Foundation of ChinaProject(04JJ3078) supported by the Natural Science Foundation of Hunan Province, China
文摘The analytical micromagnetics and numerical simulations were used to investigate the domain wall structure during the magnetization reversal in nanowires. Micromagnetic analysis shows that the domain wall structure is mainly determined by the competition between the demagnetization energy and exchange energy. The wall with vortex magnetization structure in cross-section is energetically more favorable for wires with large diameter. With the reduction of diameter the exchange energy increases. At a critical diameter the vortex structure can not be sustained and the transition from vortex wall to transverse wall occurs. The critical diameters for this transition are about 40 nm for Ni wire and 20 nm for Fe wire, respectively. A series of micromagnetic simulations on the cone-shaped wire confirm the analytical results. The simulations also show that during the reversal process the vortex domain wall moves much faster than the transverse one.
文摘Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.
