With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration o...With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration of chemical sensors.In this work,a highly sensitive and power-efficient ISFET was proposed based on a metal-ferroelectric-insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function.Along with a remotely connected EG electrode,the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.展开更多
基金the National Natural Science Foundation of China No.52073160the National Key Research and Development Program of China No.2020YFF01014706+1 种基金Beijing Municipal Science and Technology Commission(Z211100002421012)Key Laboratory of Advanced Materials(MOE).
文摘With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration of chemical sensors.In this work,a highly sensitive and power-efficient ISFET was proposed based on a metal-ferroelectric-insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function.Along with a remotely connected EG electrode,the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.
