A design of high dynamic range linear radio frequency power detector （PD）, aimed for transmitter carrier leakage suppression is presented in this paper. Based on the logarithmic amplifier principle, this detector ut...A design of high dynamic range linear radio frequency power detector （PD）, aimed for transmitter carrier leakage suppression is presented in this paper. Based on the logarithmic amplifier principle, this detector utilizes the successive detection method to achieve a high dynamic range in the radio frequency band. In order to increase sensitivity, a low noise amplifier （LNA） is placed in the front of this detector. DC coupling is adopted in this architecture to reduce parasitics and save area, but this will unavoidably cause DC offsets in the circuit which are detrimental to the dynamic range. So a DC offset cancelling （DCOC） technique is proposed to solve the problem. Finally, this detector was fabricated in the SMIC 0.13μm CMOS process. The measured results show that it achieves a wide dynamic range of 50 dB/40 dB with log errors in 4-1 dB at 900 MHz/2 GHz, while draws 16 mA from a 1.5 V power supply. The active chip area is 0.27×0.67 mm2.展开更多
基金Project supported by the Important National Science & Technology Specific Projects,China(No.2010ZX03001-004)the National High Technology Research and Development Program of China(No.2009AA011605)
文摘A design of high dynamic range linear radio frequency power detector （PD）, aimed for transmitter carrier leakage suppression is presented in this paper. Based on the logarithmic amplifier principle, this detector utilizes the successive detection method to achieve a high dynamic range in the radio frequency band. In order to increase sensitivity, a low noise amplifier （LNA） is placed in the front of this detector. DC coupling is adopted in this architecture to reduce parasitics and save area, but this will unavoidably cause DC offsets in the circuit which are detrimental to the dynamic range. So a DC offset cancelling （DCOC） technique is proposed to solve the problem. Finally, this detector was fabricated in the SMIC 0.13μm CMOS process. The measured results show that it achieves a wide dynamic range of 50 dB/40 dB with log errors in 4-1 dB at 900 MHz/2 GHz, while draws 16 mA from a 1.5 V power supply. The active chip area is 0.27×0.67 mm2.
