Six-junction vertically-stacked Ga As laser power converters（LPCs） with n^＋-Ga As/p^＋-Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the po...Six-junction vertically-stacked Ga As laser power converters（LPCs） with n^＋-Ga As/p^＋-Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage（I–V） characteristics under 808 nm laser illumination, and a maximum conversion efficiency ηc of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.展开更多
Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） f...Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.展开更多
基金supported by the National Natural Science Foundation of China(No.61604171)the Jiangsu Province Science Foundation for Youths(No.BK20170431)Zhongtian Technology Group Co.Ltd
文摘Six-junction vertically-stacked Ga As laser power converters（LPCs） with n^＋-Ga As/p^＋-Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage（I–V） characteristics under 808 nm laser illumination, and a maximum conversion efficiency ηc of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.
基金Project financially supported by the National Natural Science Foundation of China(No.61376065)Zhongtian Technology Group Co.Ltd
文摘Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.
