A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in w...A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.展开更多
We investigate the quantum-mechanical effects on the electrical properties of the double-gate j unction- less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the thre...We investigate the quantum-mechanical effects on the electrical properties of the double-gate j unction- less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.展开更多
文摘A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.
文摘We investigate the quantum-mechanical effects on the electrical properties of the double-gate j unction- less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.
