Constructing monolithic tandem solar cells (TSCs) is an effective method to break the Shockley–Queisser (S–Q) radiative efficiency limit for single-junction solar cells. Employing the wide bandgap perovskite materia...Constructing monolithic tandem solar cells (TSCs) is an effective method to break the Shockley–Queisser (S–Q) radiative efficiency limit for single-junction solar cells. Employing the wide bandgap perovskite materials and low bandgap organic materials as absorber layers for front and rear subcells, respectively, to construct perovskite/organic TSCs can complementarily absorb sunlight in ultraviolet-visible (UV-Vis) range by front perovskite and near-infrared (NIR) range by rear organic molecules, thus reducing the thermalization energy losses. Besides the subcells, the interconnection layer (ICL), which physically and electrically connects the front and rear subcells, is also an important tunnel junction to recombine charges. In this review, we summarize the optimization strategies of wide bandgap perovskites for front subcell, narrow bandgap organic material for rear subcell, and the ICLs employed in monolithic perovskite/organic TSCs.展开更多
Organic-inorganic metal-halide perovskite solar cells(PerSCs)have achieved significant progresses due to their outstanding optoelectronic charac-teristics,and the power conversion efficiency(PCE)of single-junction Per...Organic-inorganic metal-halide perovskite solar cells(PerSCs)have achieved significant progresses due to their outstanding optoelectronic charac-teristics,and the power conversion efficiency(PCE)of single-junction PerSCs has been boosted from 3.8%to a certified 25.2%.However,the efficien-cy of single-junction cells is governed by the Shockley-Queisser(S-Q)radiative limit,and fabricating all-perovskite tandem solar cells is a particularly attractive method to break the S-Q limit.Since the bandgap of lead(Pb)-based mixed halide perovskite can be tuned from 1.55 eV to 2.3 eV,and the mixed tin(Sn)-Pb perovskites have bandgap of~1.2 eV,these perovskites become the best candidates for the front and rear subcells of all-perovskite tandem device,respectively.In this review,we firstly summarize the current development progresses of two-terminal(2-T)all-perovskite tandem so-lar cells.For further optimizing the device performance,the wide bandgap mixed halide perovskites for front subcell,mixed Sn-Pb narrow bandgap perovskites for rear subcell,and the interconnection layer(ICL)of 2-T tandem device are then discussed.This review aims to open a pathway to real-ize highly efficient all-perovskite tandem solar cells.展开更多
The world record device efficiency of single-junction solar cells based on organic–inorganic hybrid perovskites has reached 25.5%.Further improvement in device power conversion efficiency(PCE)can be achieved by eithe...The world record device efficiency of single-junction solar cells based on organic–inorganic hybrid perovskites has reached 25.5%.Further improvement in device power conversion efficiency(PCE)can be achieved by either optimizing perovskite films or designing novel device structures such as perovskite/Si tandem solar cells.With the marriage of perovskite and Si solar cells,a tandem device configuration is able to achieve a PCE exceeding the Shockley–Queisser limit of single-junction solar cells by enhancing the usage of solar spectrum.After several years of development,the highest PCE of the perovskite/Si tandem cell has reached 29.5%,which is higher than that of perovskite-and Si-based singlejunction cells.Here,in this review,we will(1)first discuss the device structure and fundamental working principle of both two-terminal(2T)and four-terminal(4T)perovskite/Si tandem solar cells;(2)second,provide a brief overview of the advances of perovskite/Si tandem solar cells regarding the development of interconnection layer,perovskite active layer,tandem device structure,and lightmanagement strategies;(3)third,discuss the challenges and opportunities for further developing perovskite/Si tandem solar cells.This review article,on the one hand,provides a comprehensive understanding to readers on the development of perovskite/Si tandems.On the other hand,it proposes various novel applications that may bring such tandems into the market in a near future.展开更多
Tandem cell with structure of indium tin oxide(ITO)/molybdenum oxide(MoO_(3))/fullerene(C60)/copper phthalocyanine(CuPc)/C60/tris-8-hydroxy-quinolinato aluminum(Alq_(3))/Al was fabricated to study the effect of net ca...Tandem cell with structure of indium tin oxide(ITO)/molybdenum oxide(MoO_(3))/fullerene(C60)/copper phthalocyanine(CuPc)/C60/tris-8-hydroxy-quinolinato aluminum(Alq_(3))/Al was fabricated to study the effect of net carriers at the interconnection layer. The open circuit voltage and short circuit current were found to be 1.15 V and 0.56 mA/cm^(2),respectively. Almost the same performance(1.05 V, 0.58 mA/cm^(2)) of tandem cell with additional recombination layer(ITO/MoO_(3)/C60/Alq_(3)/Al/Ag/MoO_(3)/CuPc/C60/Alq_(3)/Al) demonstrates that the carrier balance is more crucial than carrier recombination. The net holes at the interconnection layer caused by more carrier generation from the back cell on one hand would enhance the recombination with electrons from the front cell and on the other hand would quench the excitons produced in CuPc of the back cell.展开更多
Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state ligh...Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.展开更多
总结自大马士革铜工艺建立以来,电化学工作者利用化学镀技术围绕该工艺而开展的一系列相关研究,介绍了应用化学镀沉积镍三元合金防扩散层和化学镀铜种子层的研究以及离子束沉积法(Ion ized C lus-ter Beam,ICB)形成Pd催化层后的化学镀...总结自大马士革铜工艺建立以来,电化学工作者利用化学镀技术围绕该工艺而开展的一系列相关研究,介绍了应用化学镀沉积镍三元合金防扩散层和化学镀铜种子层的研究以及离子束沉积法(Ion ized C lus-ter Beam,ICB)形成Pd催化层后的化学镀铜技术和超级化学镀铜方法.简要叙述化学镀铜技术在超大规模集成电路中的应用,总结化学镀铜技术的研究进展,并指出了今后的发展方向.展开更多
基金supported by the National Natural Science Foundation of China(Nos.51873007,21835006,51961165102 and52003022).
文摘Constructing monolithic tandem solar cells (TSCs) is an effective method to break the Shockley–Queisser (S–Q) radiative efficiency limit for single-junction solar cells. Employing the wide bandgap perovskite materials and low bandgap organic materials as absorber layers for front and rear subcells, respectively, to construct perovskite/organic TSCs can complementarily absorb sunlight in ultraviolet-visible (UV-Vis) range by front perovskite and near-infrared (NIR) range by rear organic molecules, thus reducing the thermalization energy losses. Besides the subcells, the interconnection layer (ICL), which physically and electrically connects the front and rear subcells, is also an important tunnel junction to recombine charges. In this review, we summarize the optimization strategies of wide bandgap perovskites for front subcell, narrow bandgap organic material for rear subcell, and the ICLs employed in monolithic perovskite/organic TSCs.
基金supported by the National Natural Science Foundation of China(Nos.51873007,21835006,51961165102,51772218)the Open Project of Key Laboratory of Solar Energy Utilization&Energy Saving Technology of Zhejiang Province(ZJS-OP-2020-04)the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(Grant No.LAPS20003).
文摘Organic-inorganic metal-halide perovskite solar cells(PerSCs)have achieved significant progresses due to their outstanding optoelectronic charac-teristics,and the power conversion efficiency(PCE)of single-junction PerSCs has been boosted from 3.8%to a certified 25.2%.However,the efficien-cy of single-junction cells is governed by the Shockley-Queisser(S-Q)radiative limit,and fabricating all-perovskite tandem solar cells is a particularly attractive method to break the S-Q limit.Since the bandgap of lead(Pb)-based mixed halide perovskite can be tuned from 1.55 eV to 2.3 eV,and the mixed tin(Sn)-Pb perovskites have bandgap of~1.2 eV,these perovskites become the best candidates for the front and rear subcells of all-perovskite tandem device,respectively.In this review,we firstly summarize the current development progresses of two-terminal(2-T)all-perovskite tandem so-lar cells.For further optimizing the device performance,the wide bandgap mixed halide perovskites for front subcell,mixed Sn-Pb narrow bandgap perovskites for rear subcell,and the interconnection layer(ICL)of 2-T tandem device are then discussed.This review aims to open a pathway to real-ize highly efficient all-perovskite tandem solar cells.
基金National Key Research and Development Program of China,Grant/Award Number:2017YFA0206600National Natural Science Foundation of China,Grant/Award Numbers:51773045,21772030,51922032,21961160720。
文摘The world record device efficiency of single-junction solar cells based on organic–inorganic hybrid perovskites has reached 25.5%.Further improvement in device power conversion efficiency(PCE)can be achieved by either optimizing perovskite films or designing novel device structures such as perovskite/Si tandem solar cells.With the marriage of perovskite and Si solar cells,a tandem device configuration is able to achieve a PCE exceeding the Shockley–Queisser limit of single-junction solar cells by enhancing the usage of solar spectrum.After several years of development,the highest PCE of the perovskite/Si tandem cell has reached 29.5%,which is higher than that of perovskite-and Si-based singlejunction cells.Here,in this review,we will(1)first discuss the device structure and fundamental working principle of both two-terminal(2T)and four-terminal(4T)perovskite/Si tandem solar cells;(2)second,provide a brief overview of the advances of perovskite/Si tandem solar cells regarding the development of interconnection layer,perovskite active layer,tandem device structure,and lightmanagement strategies;(3)third,discuss the challenges and opportunities for further developing perovskite/Si tandem solar cells.This review article,on the one hand,provides a comprehensive understanding to readers on the development of perovskite/Si tandems.On the other hand,it proposes various novel applications that may bring such tandems into the market in a near future.
基金supported by the National Natural Science Foundation of China (Grant Nos. 11774293, 1207432, and 61874016)。
文摘Tandem cell with structure of indium tin oxide(ITO)/molybdenum oxide(MoO_(3))/fullerene(C60)/copper phthalocyanine(CuPc)/C60/tris-8-hydroxy-quinolinato aluminum(Alq_(3))/Al was fabricated to study the effect of net carriers at the interconnection layer. The open circuit voltage and short circuit current were found to be 1.15 V and 0.56 mA/cm^(2),respectively. Almost the same performance(1.05 V, 0.58 mA/cm^(2)) of tandem cell with additional recombination layer(ITO/MoO_(3)/C60/Alq_(3)/Al/Ag/MoO_(3)/CuPc/C60/Alq_(3)/Al) demonstrates that the carrier balance is more crucial than carrier recombination. The net holes at the interconnection layer caused by more carrier generation from the back cell on one hand would enhance the recombination with electrons from the front cell and on the other hand would quench the excitons produced in CuPc of the back cell.
基金Project(11904298)supported by the National Natural Science Foundation of ChinaProject(cstc2020jcyj-msxm X0586)supported by Chongqing Natural Science Foundation,ChinaProject(S202010635001)supported by Chongqing Municipal Training Program of Innovation and Entrepreneurship for Undergraduates,China。
文摘Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.
文摘总结自大马士革铜工艺建立以来,电化学工作者利用化学镀技术围绕该工艺而开展的一系列相关研究,介绍了应用化学镀沉积镍三元合金防扩散层和化学镀铜种子层的研究以及离子束沉积法(Ion ized C lus-ter Beam,ICB)形成Pd催化层后的化学镀铜技术和超级化学镀铜方法.简要叙述化学镀铜技术在超大规模集成电路中的应用,总结化学镀铜技术的研究进展,并指出了今后的发展方向.
