Samples of Ag<sub>8</sub>Ge<sub>1-x</sub>Mn<sub>x</sub>Te<sub>6</sub> solid solutions with different manganese content (x = 0, 0.05, 0.1, 0.2) were prepared by fusing an...Samples of Ag<sub>8</sub>Ge<sub>1-x</sub>Mn<sub>x</sub>Te<sub>6</sub> solid solutions with different manganese content (x = 0, 0.05, 0.1, 0.2) were prepared by fusing and further pressing their powders under the pressure of 0.6 GPa. In addition of Mn atoms to the Ag<sub>8</sub>GeTe<sub>6</sub> compound leads to compression of their lattice. All p-type samples acquire a high resistance below the transition at temperatures of 180 - 220 K. The electrical conductivity of all compositions in the range of 220 - 300 K increases due to hopping mechanism, and at temperatures T > 320 K, a semiconductor characteristic is observed. By studying impedance spectra of samples, it was established that at 80 K solid solutions behave like a homogeneous dielectric material. At high temperatures and frequencies of an external electric field, a significant role of grain boundaries in conductivity was revealed. The dielectric anomaly occurring at low frequencies is also associated with an effect that manifests itself in the grain boundary.展开更多
In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates a...In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates at room temperature. The electrical conductivity of the films was investigated in the temperature range of 15-500 K. The conductivity data in the temperature range of 400-500 K show the extended state conduction mecha- nism, while the multiphonon hopping （MPH） conduction is found to dominate the electrical transport in the tempera- ture range of 150-300 K. The films deposited at 180 s have the maximum conductivity. The conductivity at T 〈 60 K could be described in terms of variable range hopping （VRH） conduction. The localized state density around Fermi level （N（EF）） at low temperature for the films deposited at 180 s has the minimum value of about 4.02 × 10^21 cm^-3.eV^-1. The average hopping distance （Rhop） for the films deposited at 180 s has the maximum value of about 3.51 × 10^-7 cm.展开更多
Gradual localization of charge carriers is studied in a series of microsize samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C+ ions with energy 35 keV. Meas...Gradual localization of charge carriers is studied in a series of microsize samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C+ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magneto-resistance in fields up to 4 T show that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes shows a remarkably good agreement with experimental data.展开更多
The electric measurements were carried out for La0.8Sr0.2CoO3 nanoceramics by using impedance spectroscopy methods. The resistance of sample was practically independent of frequency in measurement range. Its dependenc...The electric measurements were carried out for La0.8Sr0.2CoO3 nanoceramics by using impedance spectroscopy methods. The resistance of sample was practically independent of frequency in measurement range. Its dependence on reciprocal temperature showed quite complicated mechanism of conduction. The most striking property of investigated sample was its resistance decreasing with increasing applied polarization.展开更多
This paper presents a model to describe alternating current （AC） conductivity of DNA sequences, in which DNA is considered as a one-dimensional （1D） disordered system, and electrons transport via hopping between l...This paper presents a model to describe alternating current （AC） conductivity of DNA sequences, in which DNA is considered as a one-dimensional （1D） disordered system, and electrons transport via hopping between localized states. It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises, and it takes the form of σac（ω） - ω2 ln^2（1/ω）. Also AC conductivity of DNA sequences increases with the increase of temperature, this phenomenon presents characteristics of weak temperature-dependence. Meanwhile, the AC conductivity in an offdiagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures, which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity, while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition, the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences. For p 〈 0.5, the conductivity of DNA sequence decreases with the increase of p, while for p ≥ 0.5, the conductivity increases with the increase of p.展开更多
We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in prese...We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.展开更多
Based on a tight-binding disordered model describing a single electron band, we establish a direct current （de） electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also...Based on a tight-binding disordered model describing a single electron band, we establish a direct current （de） electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at, low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm＇s law conductivity.展开更多
On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical co...On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.展开更多
Dielectric constant, ε', dielectric loss factor, ε', electric modulus, M, and ac conductivity, σac, of pure CPVC and that stabilized with 10 wt% of phenyl maleimide, PM, have been carried out. The dielectri...Dielectric constant, ε', dielectric loss factor, ε', electric modulus, M, and ac conductivity, σac, of pure CPVC and that stabilized with 10 wt% of phenyl maleimide, PM, have been carried out. The dielectric properties have been studied in the temperature and frequency ranges;310 K - 450 K and 1 kHz- 4 MHz, respectively. The incorporation of 10 wt% of PM as stabilizer for CPVC leads to reduce its Tg from 405K to 378K at 10 kHz. PM molecules within CPVC structure reduce the double bond, stabilizer effect, and cause the widely spacing between CPVC main chains, plasticizer effect.? Three dielectric relaxation processes namely ρ, α', and α were observed for pure CPVC. The first process was explained based on space charge formation or Maxwell-Wagner-Sillers, MWS, polarization. The second one is due to the segmental motion of the branching of CPVC. The third process occurs around the glass-rubber temperature, Tg, and is related to the micro-Brownian motion of the main polymer chain. Electric modulus and ac conductivity reveal that the conduction mechanism of CPVC is follow the correlated barrier hopping, CBH, while stabilized sample exhibits a quantum mechanical tunneling, QMT, type conduction.展开更多
文摘Samples of Ag<sub>8</sub>Ge<sub>1-x</sub>Mn<sub>x</sub>Te<sub>6</sub> solid solutions with different manganese content (x = 0, 0.05, 0.1, 0.2) were prepared by fusing and further pressing their powders under the pressure of 0.6 GPa. In addition of Mn atoms to the Ag<sub>8</sub>GeTe<sub>6</sub> compound leads to compression of their lattice. All p-type samples acquire a high resistance below the transition at temperatures of 180 - 220 K. The electrical conductivity of all compositions in the range of 220 - 300 K increases due to hopping mechanism, and at temperatures T > 320 K, a semiconductor characteristic is observed. By studying impedance spectra of samples, it was established that at 80 K solid solutions behave like a homogeneous dielectric material. At high temperatures and frequencies of an external electric field, a significant role of grain boundaries in conductivity was revealed. The dielectric anomaly occurring at low frequencies is also associated with an effect that manifests itself in the grain boundary.
文摘In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates at room temperature. The electrical conductivity of the films was investigated in the temperature range of 15-500 K. The conductivity data in the temperature range of 400-500 K show the extended state conduction mecha- nism, while the multiphonon hopping （MPH） conduction is found to dominate the electrical transport in the tempera- ture range of 150-300 K. The films deposited at 180 s have the maximum conductivity. The conductivity at T 〈 60 K could be described in terms of variable range hopping （VRH） conduction. The localized state density around Fermi level （N（EF）） at low temperature for the films deposited at 180 s has the minimum value of about 4.02 × 10^21 cm^-3.eV^-1. The average hopping distance （Rhop） for the films deposited at 180 s has the maximum value of about 3.51 × 10^-7 cm.
文摘Gradual localization of charge carriers is studied in a series of microsize samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C+ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magneto-resistance in fields up to 4 T show that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes shows a remarkably good agreement with experimental data.
文摘The electric measurements were carried out for La0.8Sr0.2CoO3 nanoceramics by using impedance spectroscopy methods. The resistance of sample was practically independent of frequency in measurement range. Its dependence on reciprocal temperature showed quite complicated mechanism of conduction. The most striking property of investigated sample was its resistance decreasing with increasing applied polarization.
基金supported by the Doctoral Program Foundation of Institutions of Higher Education,China (Grant No 20070533075)
文摘This paper presents a model to describe alternating current （AC） conductivity of DNA sequences, in which DNA is considered as a one-dimensional （1D） disordered system, and electrons transport via hopping between localized states. It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises, and it takes the form of σac（ω） - ω2 ln^2（1/ω）. Also AC conductivity of DNA sequences increases with the increase of temperature, this phenomenon presents characteristics of weak temperature-dependence. Meanwhile, the AC conductivity in an offdiagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures, which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity, while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition, the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences. For p 〈 0.5, the conductivity of DNA sequence decreases with the increase of p, while for p ≥ 0.5, the conductivity increases with the increase of p.
文摘We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.
文摘Based on a tight-binding disordered model describing a single electron band, we establish a direct current （de） electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at, low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm＇s law conductivity.
文摘On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.
文摘Dielectric constant, ε', dielectric loss factor, ε', electric modulus, M, and ac conductivity, σac, of pure CPVC and that stabilized with 10 wt% of phenyl maleimide, PM, have been carried out. The dielectric properties have been studied in the temperature and frequency ranges;310 K - 450 K and 1 kHz- 4 MHz, respectively. The incorporation of 10 wt% of PM as stabilizer for CPVC leads to reduce its Tg from 405K to 378K at 10 kHz. PM molecules within CPVC structure reduce the double bond, stabilizer effect, and cause the widely spacing between CPVC main chains, plasticizer effect.? Three dielectric relaxation processes namely ρ, α', and α were observed for pure CPVC. The first process was explained based on space charge formation or Maxwell-Wagner-Sillers, MWS, polarization. The second one is due to the segmental motion of the branching of CPVC. The third process occurs around the glass-rubber temperature, Tg, and is related to the micro-Brownian motion of the main polymer chain. Electric modulus and ac conductivity reveal that the conduction mechanism of CPVC is follow the correlated barrier hopping, CBH, while stabilized sample exhibits a quantum mechanical tunneling, QMT, type conduction.
