A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and...A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.展开更多
Here we reported the fabrication of efficient polymer solar cells from regioregular poly（3-hexylthiophene） （P3HT）：fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester （PC6jBM） mixtures, in which solu...Here we reported the fabrication of efficient polymer solar cells from regioregular poly（3-hexylthiophene） （P3HT）：fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester （PC6jBM） mixtures, in which solution- processed vanadium oxide （VOx） was used as a hole-extracting layer （HEL）. The obtained devices exhibited a high power conversion efficiency of 3.96%, and can be enhanced to 4.06% and 4.16%, respectively, when two types of PEDOT：PSS with different conductivities were used in conjunction with the VOx layer. All the VOx-based devices showed a high fill factor （FF） over 70%, which was ascribed to efficient hole extracting efficiency associated with the solution-processed VOx hole-extracting layer. The origins of the improvement were also studied by transmission spectra, atomic force microscope （AFM）, and capacitance-voltage characteristics.展开更多
基金Project supported by the Hunan Provincial Natural Science Foundation of China(Grant No.2021JJ30738)Scientific Research Fund of Hunan Provincial Education Department(Grant No.19K001)Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering’s Open Fund Project-2020(Grant No.202016)。
文摘A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.
基金H.-B.W.sincerely thank National Basic Research Program of China，National Natural Science Foundation of China，Program for New Century Excellent Talents in University (NCET-10-0400) for the financial support
文摘Here we reported the fabrication of efficient polymer solar cells from regioregular poly（3-hexylthiophene） （P3HT）：fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester （PC6jBM） mixtures, in which solution- processed vanadium oxide （VOx） was used as a hole-extracting layer （HEL）. The obtained devices exhibited a high power conversion efficiency of 3.96%, and can be enhanced to 4.06% and 4.16%, respectively, when two types of PEDOT：PSS with different conductivities were used in conjunction with the VOx layer. All the VOx-based devices showed a high fill factor （FF） over 70%, which was ascribed to efficient hole extracting efficiency associated with the solution-processed VOx hole-extracting layer. The origins of the improvement were also studied by transmission spectra, atomic force microscope （AFM）, and capacitance-voltage characteristics.
基金Project supported by Zhejiang Provincial Natural Science Foundation of China(Youth Talent Program:R4110030)the Program for New Century Excellent Talents in University(No.NCET-12-0494)+1 种基金the Research Fund for the Doctoral Program of Higher Education(No.20130101110123)the Program for 14th China-Japan S&T Cooperation(No.2013DFG52800)~~
