The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the e...The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm^2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm^2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.展开更多
Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP ba...Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.展开更多
报道了研制的 Al Ga N / Ga N微波功率 HEMT,该器件采用以蓝宝石为衬底的非掺杂 Al Ga N/ Ga N异质结构 ,器件工艺采用了 Ti/ Al/ Ni/ Au欧姆接触和 Ni/ Au肖特基势垒接触以及 Si N介质进行器件的钝化 .研制的 2 0 0μm栅宽 T型布局 Al ...报道了研制的 Al Ga N / Ga N微波功率 HEMT,该器件采用以蓝宝石为衬底的非掺杂 Al Ga N/ Ga N异质结构 ,器件工艺采用了 Ti/ Al/ Ni/ Au欧姆接触和 Ni/ Au肖特基势垒接触以及 Si N介质进行器件的钝化 .研制的 2 0 0μm栅宽 T型布局 Al Ga N / Ga N HEMT在 1.8GHz,Vds=30 V时输出功率为 2 8.93d Bm,输出功率密度达到 3.9W/mm ,功率增益为 15 .5 9d B,功率附加效率 (PAE)为 4 8.3% .在 6 .2 GHz,Vds=2 5 V时该器件输出功率为 2 7.0 6 d Bm ,输出功率密度为 2 .5 W/ mm ,功率增益为 10 .2 4 d B,PAE为 35 .2 % .展开更多
利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。...利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。栅极、漏极和源极的温度幅度有着非常明显的差距,器件表面以栅为中心呈现较大的温度分布梯度。器件表面栅金属温度变化幅度最高、变化速度最快,其主要温度变化发生在5μs之内。经过仔细分析,器件各部位温度差异的主要原因是器件的传热方向、不同区域与发热点的距离。展开更多
The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heat...The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.展开更多
基金Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301)National Defense Innovation Program,China(Grant No.48xx4)+2 种基金the National Key Technologies Research and Development Program of China(Grant No.2018YFA03xxx01)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ2017xxx2)the National Natural Science Foundation of China(Grant No.6150xxx6)
文摘The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm^2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm^2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.
文摘Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.
文摘报道了研制的 Al Ga N / Ga N微波功率 HEMT,该器件采用以蓝宝石为衬底的非掺杂 Al Ga N/ Ga N异质结构 ,器件工艺采用了 Ti/ Al/ Ni/ Au欧姆接触和 Ni/ Au肖特基势垒接触以及 Si N介质进行器件的钝化 .研制的 2 0 0μm栅宽 T型布局 Al Ga N / Ga N HEMT在 1.8GHz,Vds=30 V时输出功率为 2 8.93d Bm,输出功率密度达到 3.9W/mm ,功率增益为 15 .5 9d B,功率附加效率 (PAE)为 4 8.3% .在 6 .2 GHz,Vds=2 5 V时该器件输出功率为 2 7.0 6 d Bm ,输出功率密度为 2 .5 W/ mm ,功率增益为 10 .2 4 d B,PAE为 35 .2 % .
文摘利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。栅极、漏极和源极的温度幅度有着非常明显的差距,器件表面以栅为中心呈现较大的温度分布梯度。器件表面栅金属温度变化幅度最高、变化速度最快,其主要温度变化发生在5μs之内。经过仔细分析,器件各部位温度差异的主要原因是器件的传热方向、不同区域与发热点的距离。
基金supported by the Natural Science Foundation of Beijing,China (Grant No. 4092005)the National High Technology Research and Development Program of China (Grant No. 2009AA032704)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091103110006)
文摘The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.
