In order to study the indentation size effect(ISE)of germanium single crystals,nano-indentation experiments were carried out on the(100),(110)and(111)plane-orientated germanium single crystals.The true hardness of eac...In order to study the indentation size effect(ISE)of germanium single crystals,nano-indentation experiments were carried out on the(100),(110)and(111)plane-orientated germanium single crystals.The true hardness of each crystal plane of germanium single crystals was calculated based on the Meyer equation,proportional sample resistance(PSR)model and Nix-Gao model,and the indentation size effect(ISE)factor of each crystal plane was calculated.Results show that,the germanium single crystals experience elastic deformation,plastic deformation and brittle fracture during the loading process,and the three crystal planes all show obvious ISE phenomenon.All three models can effectively describe the ISE of germanium single crystals,and the calculated value of Nix-Gao model is the most accurate.Compared with the other two crystal planes,Ge(110)has the highest size effect factor m and the highest hardness,which indicates that Ge(110)has the worst plasticity.展开更多
为提高单晶锗片抛光的表面质量和面型精度,基于ABAQUS建立了Φ9μm粒径的单晶金刚石磨粒与(111)晶向的单晶锗片作用的有限元模型,进行了变载仿真实验,分析了磨粒去除单晶锗片表面材料的机理,将单晶锗材料变形分为弹性变形、塑性变形、...为提高单晶锗片抛光的表面质量和面型精度,基于ABAQUS建立了Φ9μm粒径的单晶金刚石磨粒与(111)晶向的单晶锗片作用的有限元模型,进行了变载仿真实验,分析了磨粒去除单晶锗片表面材料的机理,将单晶锗材料变形分为弹性变形、塑性变形、脆塑转变和脆性破坏4个阶段,并得到了各阶段对应的加载力范围。进行了18、24、30和36 m N这4组恒载仿真实验,分析了单晶锗片产生边缘效应的原因,结果表明:加载力越大,边缘效应越明显。进行了加载力为58.8、78.4、98.0和117.6 N的4组抛光实验,使用原子力显微镜观察抛光后的表面三维形貌,使用粗糙度测量仪测量抛光后的表面轮廓。最终形貌呈现的材料变形规律以及轮廓呈现的加载力对边缘效应的影响规律均与仿真结果一致,证明了仿真的有效性。展开更多
基金Project(51765027)supported by the National Natural Science Foundation of China.
文摘In order to study the indentation size effect(ISE)of germanium single crystals,nano-indentation experiments were carried out on the(100),(110)and(111)plane-orientated germanium single crystals.The true hardness of each crystal plane of germanium single crystals was calculated based on the Meyer equation,proportional sample resistance(PSR)model and Nix-Gao model,and the indentation size effect(ISE)factor of each crystal plane was calculated.Results show that,the germanium single crystals experience elastic deformation,plastic deformation and brittle fracture during the loading process,and the three crystal planes all show obvious ISE phenomenon.All three models can effectively describe the ISE of germanium single crystals,and the calculated value of Nix-Gao model is the most accurate.Compared with the other two crystal planes,Ge(110)has the highest size effect factor m and the highest hardness,which indicates that Ge(110)has the worst plasticity.
文摘为提高单晶锗片抛光的表面质量和面型精度,基于ABAQUS建立了Φ9μm粒径的单晶金刚石磨粒与(111)晶向的单晶锗片作用的有限元模型,进行了变载仿真实验,分析了磨粒去除单晶锗片表面材料的机理,将单晶锗材料变形分为弹性变形、塑性变形、脆塑转变和脆性破坏4个阶段,并得到了各阶段对应的加载力范围。进行了18、24、30和36 m N这4组恒载仿真实验,分析了单晶锗片产生边缘效应的原因,结果表明:加载力越大,边缘效应越明显。进行了加载力为58.8、78.4、98.0和117.6 N的4组抛光实验,使用原子力显微镜观察抛光后的表面三维形貌,使用粗糙度测量仪测量抛光后的表面轮廓。最终形貌呈现的材料变形规律以及轮廓呈现的加载力对边缘效应的影响规律均与仿真结果一致,证明了仿真的有效性。
