Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivo...Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivolume, faster switching performance,advanced ruggedness and reliability at elevated operating temperature and extended SOA diagrams.To cover all applications in the various fields of industry,consumer,computing and automotive the device optimization is different for low voltage power MOSFET,for high voltage MOSFET,for plasma modulated devices and components based on wide bandgap(WB) material.In the paper,the main development trends will be described and discussed.展开更多
Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indic...Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indicate that the mass loss and surface erosion morphology of the electrode are related with the electrode material （conductivity σ, melting point Tin, density p and thermal capacity c） and the impulse transferred charge （or energy） per impulse for the same total impulse transferred charge. The experimental results indicate that the mass loss of stainless steel, copper-tungsten and graphite are 380.10 μg/C, 118.10 μg/C and 81.90 μg/C respectively under the condition of a total impulse transferred charge of 525 C and a transferred charge per impulse of 10.5 C. Under the same impulse transferred charge, the mass loss of copper-tungsten（118.10 μg/C） with the transferred charge per impulse at 10.5 C is far larger than the mass loss （38.61μg/C） at a 1.48 C transferred charge per impulse. The electrode erosion mechanism under high energy impulse arcs is analyzed briefly and it is suggested that by selecting high conductive metal or metal alloy as the electrode material of a high energy impulse spark gap switch and setting high erosion resistance material at the top of the electrode, the mass loss of the electrode can be reduced and the life of the switch prolonged.展开更多
文摘Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivolume, faster switching performance,advanced ruggedness and reliability at elevated operating temperature and extended SOA diagrams.To cover all applications in the various fields of industry,consumer,computing and automotive the device optimization is different for low voltage power MOSFET,for high voltage MOSFET,for plasma modulated devices and components based on wide bandgap(WB) material.In the paper,the main development trends will be described and discussed.
文摘Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indicate that the mass loss and surface erosion morphology of the electrode are related with the electrode material （conductivity σ, melting point Tin, density p and thermal capacity c） and the impulse transferred charge （or energy） per impulse for the same total impulse transferred charge. The experimental results indicate that the mass loss of stainless steel, copper-tungsten and graphite are 380.10 μg/C, 118.10 μg/C and 81.90 μg/C respectively under the condition of a total impulse transferred charge of 525 C and a transferred charge per impulse of 10.5 C. Under the same impulse transferred charge, the mass loss of copper-tungsten（118.10 μg/C） with the transferred charge per impulse at 10.5 C is far larger than the mass loss （38.61μg/C） at a 1.48 C transferred charge per impulse. The electrode erosion mechanism under high energy impulse arcs is analyzed briefly and it is suggested that by selecting high conductive metal or metal alloy as the electrode material of a high energy impulse spark gap switch and setting high erosion resistance material at the top of the electrode, the mass loss of the electrode can be reduced and the life of the switch prolonged.
