By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab-...By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.展开更多
文摘By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.
