针对无人机测控应用设计了一种S波段窄带带通体声波(BAW)滤波器,其技术指标为:中心频率2.46 GHz,带宽41 MHz,带内插损大于-3 d B,带内纹波小于1 d B,带外抑制小于-40 d B@2.385 GHz和2.506 GHz。采用Mason模型设计了BAW滤波器中各薄膜...针对无人机测控应用设计了一种S波段窄带带通体声波(BAW)滤波器,其技术指标为:中心频率2.46 GHz,带宽41 MHz,带内插损大于-3 d B,带内纹波小于1 d B,带外抑制小于-40 d B@2.385 GHz和2.506 GHz。采用Mason模型设计了BAW滤波器中各薄膜体声波谐振器(FBAR)的叠层结构;使用变迹法设计了各FBAR(电极)的形状;采用一种自行开发的自动布局方法得到紧凑的BAW滤波器布局;建立了BAW滤波器的声-电磁协同仿真模型,通过这种高保真的多物理场仿真方法对设计结果进行了性能验证。该设计流程是通用的,并且有两个特点:采用声-电磁协同仿真方法对设计阶段的BAW滤波器进行最终性能检验,可以及早发现并拒绝1D Mason模型过于乐观的设计;滤波器布局设计中采用了一种新的自动化布局方法,大大简化了在此阶段的反复尝试工作,也为声-电磁协同仿真模型输出了必需的面内结构信息。展开更多
This paper investigates the issues on acoustic energy reflection of flexible film bulk acoustic resonators(FBARs). The flexible FBAR was fabricated with an air cavity in the polymer substrate, which endowed the resona...This paper investigates the issues on acoustic energy reflection of flexible film bulk acoustic resonators(FBARs). The flexible FBAR was fabricated with an air cavity in the polymer substrate, which endowed the resonator with efficient acoustic reflection and high electrical performance. The acoustic wave propagation and reflection in FBAR were first analyzed by Mason model, and then flexible FBARs of 2.66 GHz series resonance in different configurations were fabricated. To validate efficient acoustic reflection of flexible resonators, FBARs were transferred onto different polymer substrates without air cavities. Experimental results indicate that efficient acoustic reflection can be efficiently predicted by Mason model. Flexible FBARs with air cavities exhibit a higher figure of merit(FOM). Our demonstration provides a feasible solution to flexible MEMS devices with highly efficient acoustic reflection(i.e. energy preserving) and free-moving cavities, achieving both high flexibility and high electrical performance.展开更多
In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integ...In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integrated chip,the thin-film FBAR sits directly over the CMOS chip,between which a 4μm-thick SU-8 layer provides a robust adhesion and acoustic reflection cavity.The proposed system-on-chip(SoC)integration features a simple fabrication process,small size,and excellent performance.The oscillator outputs 2.024 GHz oscillations of-13.79 dB m and exhibits phase noises of-63,-120,and-136 dB c/Hz at 1 kHz,100 kHz,and far-from-carrier offset,respectively.FlexMEMS technology guarantees compact and accurate assembly,process compatibility,and high performance,thereby demonstrating its great potential in SoC hetero-integration applications.展开更多
High mass resolution of sensors based on film bulk acoustic resonators （FBARs） is required for the detection of small molecules with the low concentration. An active control scheme is presented to improve the mass r...High mass resolution of sensors based on film bulk acoustic resonators （FBARs） is required for the detection of small molecules with the low concentration. An active control scheme is presented to improve the mass resolution of the FBAR sen- sors by adding a feedback voltage onto the driving voltage between two electrodes of the FBAR sensors, The feedback voltage is obtained by giving a constant gain and a constant phase shift to the current on the electrodes of the FBAR sensors. The acoustic energy produced by the feedback voltage partly compensates the acoustic energy loss due to the material damping and the acoustic scattering, and thus improves the quality factor and the mass resolution of the FBAR sensors. An explicit expression relating to the impedance and the frequency for an FBAR sensor with the active control is derived based on the continuum theory by neglecting the influence of the electrodes. Numerical simulations show that the impedance of the FBAR sensor strongly depends on the gain and the phase shift of the feedback voltage, and the mass resolution of the FBAR sensor can greatly be improved when the appropriate gain and the phase shift of the feedback voltage are used. The active control scheme also provides an effective solution to improve the resolution of the quartz crystal microbalance （QCM）.展开更多
本文研制了一种基于磁控溅射掺镁氧化锌(Mg_xZn_(1-x)O)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR)。相比传统的氧化锌(ZnO)薄膜,Mg_xZn_(1-x)O具有高纵波声速,高电阻率优点,而且Mg原子以替位或填隙的方式进入晶格,没有改变ZnO...本文研制了一种基于磁控溅射掺镁氧化锌(Mg_xZn_(1-x)O)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR)。相比传统的氧化锌(ZnO)薄膜,Mg_xZn_(1-x)O具有高纵波声速,高电阻率优点,而且Mg原子以替位或填隙的方式进入晶格,没有改变ZnO的铅锌矿结构。通过优化磁控溅射参数的方法,获得了c轴方向生长良好的Mg_xZn_(1-x)O薄膜,并成功制得了串联谐振频率以及并联谐振频率分别在2.416 GHz和2.456 GHz的谐振器,测得其有效机电耦合系数为4.081%,回波损耗(S11)为-23.89 d B。这种SMR机械强度高、可靠性高、尺寸小,具有可立体集成到CMOS芯片表面的优势。展开更多
文摘针对无人机测控应用设计了一种S波段窄带带通体声波(BAW)滤波器,其技术指标为:中心频率2.46 GHz,带宽41 MHz,带内插损大于-3 d B,带内纹波小于1 d B,带外抑制小于-40 d B@2.385 GHz和2.506 GHz。采用Mason模型设计了BAW滤波器中各薄膜体声波谐振器(FBAR)的叠层结构;使用变迹法设计了各FBAR(电极)的形状;采用一种自行开发的自动布局方法得到紧凑的BAW滤波器布局;建立了BAW滤波器的声-电磁协同仿真模型,通过这种高保真的多物理场仿真方法对设计结果进行了性能验证。该设计流程是通用的,并且有两个特点:采用声-电磁协同仿真方法对设计阶段的BAW滤波器进行最终性能检验,可以及早发现并拒绝1D Mason模型过于乐观的设计;滤波器布局设计中采用了一种新的自动化布局方法,大大简化了在此阶段的反复尝试工作,也为声-电磁协同仿真模型输出了必需的面内结构信息。
基金supported by National Natural Science Foundation of China(Grant No.51375341)the National High Technology Research and Development Program of China(“863”Program,Grant No.2015AA042603)the 111 Project(Grant No.B07014)
文摘This paper investigates the issues on acoustic energy reflection of flexible film bulk acoustic resonators(FBARs). The flexible FBAR was fabricated with an air cavity in the polymer substrate, which endowed the resonator with efficient acoustic reflection and high electrical performance. The acoustic wave propagation and reflection in FBAR were first analyzed by Mason model, and then flexible FBARs of 2.66 GHz series resonance in different configurations were fabricated. To validate efficient acoustic reflection of flexible resonators, FBARs were transferred onto different polymer substrates without air cavities. Experimental results indicate that efficient acoustic reflection can be efficiently predicted by Mason model. Flexible FBARs with air cavities exhibit a higher figure of merit(FOM). Our demonstration provides a feasible solution to flexible MEMS devices with highly efficient acoustic reflection(i.e. energy preserving) and free-moving cavities, achieving both high flexibility and high electrical performance.
基金supported by SciTech Found of the CAEP Key Laboratory of Precision Manufacturing Technology(2012CJMZZ00009,2014ZA001)Visiting Scholar Found of the State Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology(Chongqing University)(2013MS04)+1 种基金IEE CAEP SciTech Innovation Found(S20141203)SWUST Postgraduate Innovation Found(13YCJJ36,14YCX107,14YCX109,14YCX111)
基金supported by National High Technology Research and Development Program of China(863 Program)under Grant No.2015AA042603the 111 Project under Grant No.B07014Nanchang Institute for Microtechnology of Tianjin University
文摘In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integrated chip,the thin-film FBAR sits directly over the CMOS chip,between which a 4μm-thick SU-8 layer provides a robust adhesion and acoustic reflection cavity.The proposed system-on-chip(SoC)integration features a simple fabrication process,small size,and excellent performance.The oscillator outputs 2.024 GHz oscillations of-13.79 dB m and exhibits phase noises of-63,-120,and-136 dB c/Hz at 1 kHz,100 kHz,and far-from-carrier offset,respectively.FlexMEMS technology guarantees compact and accurate assembly,process compatibility,and high performance,thereby demonstrating its great potential in SoC hetero-integration applications.
基金Project supported by the National Natural Science Foundation of China (No. 61076106)the National High Technology Research and Development Program of China (863 Program) (No. 2008AA04Z310)the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China (No. 708072)
文摘High mass resolution of sensors based on film bulk acoustic resonators （FBARs） is required for the detection of small molecules with the low concentration. An active control scheme is presented to improve the mass resolution of the FBAR sen- sors by adding a feedback voltage onto the driving voltage between two electrodes of the FBAR sensors, The feedback voltage is obtained by giving a constant gain and a constant phase shift to the current on the electrodes of the FBAR sensors. The acoustic energy produced by the feedback voltage partly compensates the acoustic energy loss due to the material damping and the acoustic scattering, and thus improves the quality factor and the mass resolution of the FBAR sensors. An explicit expression relating to the impedance and the frequency for an FBAR sensor with the active control is derived based on the continuum theory by neglecting the influence of the electrodes. Numerical simulations show that the impedance of the FBAR sensor strongly depends on the gain and the phase shift of the feedback voltage, and the mass resolution of the FBAR sensor can greatly be improved when the appropriate gain and the phase shift of the feedback voltage are used. The active control scheme also provides an effective solution to improve the resolution of the quartz crystal microbalance （QCM）.
文摘本文研制了一种基于磁控溅射掺镁氧化锌(Mg_xZn_(1-x)O)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR)。相比传统的氧化锌(ZnO)薄膜,Mg_xZn_(1-x)O具有高纵波声速,高电阻率优点,而且Mg原子以替位或填隙的方式进入晶格,没有改变ZnO的铅锌矿结构。通过优化磁控溅射参数的方法,获得了c轴方向生长良好的Mg_xZn_(1-x)O薄膜,并成功制得了串联谐振频率以及并联谐振频率分别在2.416 GHz和2.456 GHz的谐振器,测得其有效机电耦合系数为4.081%,回波损耗(S11)为-23.89 d B。这种SMR机械强度高、可靠性高、尺寸小,具有可立体集成到CMOS芯片表面的优势。
