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Te-seeded growth of few-quintuple layer Bi2Te3 nanoplates 被引量:2
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作者 Yanyuan Zhao Maria de la Mata +6 位作者 Richard L. J. Qiu Jun Zhang Xinglin wen Cesar Magen Xuan P. A. Gao Jordi Arbiol Qihua Xiong 《Nano Research》 SCIE EI CAS CSCD 2014年第9期1243-1253,共11页
We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates (down to three quintuple layers (QL)) with large planar sizes (up to tens of micrometers) through vapor transport. Optical contrast has be... We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates (down to three quintuple layers (QL)) with large planar sizes (up to tens of micrometers) through vapor transport. Optical contrast has been systematically investigated for the as-grown Bi2Te3 nanoplates on the SiO2/Si substrates, experimentally and computationally. The high and distinct optical contrast provides a fast and convenient method for the thickness determination of few-QL Bi2Te3 nanoplates. By aberration-corrected scanning transmission electron microscopy, a hexagonal crystalline structure has been identified for the Te seeds, which form naturally during the growth process and initiate an epitaxial growth of the rhombohedral- structured Bi2Te3 nanoplates. The epitaxial relationship between Te and Bi2T% is identified to be perfect along both in-plane and out-of-plane directions of the layered nanoplate. Similar growth mechanism might be expected for other bismuth chalcogenide layered materials. 展开更多
关键词 Te nucleation seed epitaxial growth BI2TE3 few-quintuple layer TEM cross-section optical contrast
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