Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the comm...Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.展开更多
人工智能与物联网时代,大数据模型驱动的应用场景和计算任务层出不穷,极大促进了国家数字化发展.然而,传统冯·诺依曼(John von Neumann)体系架构的硬件系统由于存算分离的结构特点导致存储墙瓶颈,在数据密集型应用中消耗了大量的...人工智能与物联网时代,大数据模型驱动的应用场景和计算任务层出不穷,极大促进了国家数字化发展.然而,传统冯·诺依曼(John von Neumann)体系架构的硬件系统由于存算分离的结构特点导致存储墙瓶颈,在数据密集型应用中消耗了大量的数据搬运成本,抑制了能效性能提升.存算一体技术是后摩尔(Moore)时代背离传统架构系统的新型计算范式,利用存储单元器件、电路内在特性,将基本的计算逻辑任务融入存储单元之中,从而消除数据搬运开销,有望实现智能计算硬件平台能效性能的显著提升.本文以契合存算一体技术的存储器件电路为切入点,概述基于传统互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)和新型非易失存储器件代表铁电晶体管的存算一体电路,并从器件、架构芯片、算法应用等层次讨论存算一体电路的跨层次协同设计优化方法.展开更多
Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel poten...Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel potential profile by solving the Poisson equation with the Landau-Khalatnikov（LK） equation. Moreover, the effects of the channel mobile charges on the potential are also taken into account. We also analyze the dependences of the channel potential and the on-state current on the device parameters by changing the thickness of ferroelectric layer,ferroelectric material and also verify the simulation results accord with commercial TCAD. The results show that the device can obtain better characteristics when the thickness of the ferroelectric layer is larger as it can reduce the shortest tunneling length.展开更多
基金supported by the Scientific Research Foundation of Hunan Provincial Education Department(20C1784)the National Natural Science Foundation of China(61804130,62104267,and 11832016)+4 种基金Hunan Provincial Science and Technology Innovation Major Project(2020GK2014)the National Key Research and Development Plan(2021YFB4000800)the Cultivation Projects of National Major R&D Project(92164108)the Key Projects of National Natural Science Foundation of China(11835008)the Foundation of Innovation Center of Radiation Application(KFZC2020020901).
基金supported by the National Key Technologies R&D Program,China(Grant No.2009ZX02302-002)the National Natural Science Foundation of China(Grant Nos.61376108,61076076,and 61076068)+2 种基金NSAF,China(Grant No.U1430106)the Science and Technology Commission of Shanghai Municipality,China(Grant No.13NM1400600)Zhuo Xue Plan in Fudan University,China
文摘Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.
文摘人工智能与物联网时代,大数据模型驱动的应用场景和计算任务层出不穷,极大促进了国家数字化发展.然而,传统冯·诺依曼(John von Neumann)体系架构的硬件系统由于存算分离的结构特点导致存储墙瓶颈,在数据密集型应用中消耗了大量的数据搬运成本,抑制了能效性能提升.存算一体技术是后摩尔(Moore)时代背离传统架构系统的新型计算范式,利用存储单元器件、电路内在特性,将基本的计算逻辑任务融入存储单元之中,从而消除数据搬运开销,有望实现智能计算硬件平台能效性能的显著提升.本文以契合存算一体技术的存储器件电路为切入点,概述基于传统互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)和新型非易失存储器件代表铁电晶体管的存算一体电路,并从器件、架构芯片、算法应用等层次讨论存算一体电路的跨层次协同设计优化方法.
基金Project supported by the University Natural Science Research Key Project of Anhui Province(No.KJ2017A502)the Talents Project of Anhui Science and Technology University(No.DQYJ201603)the Excellent Talents Supported Project of Colleges and Universities(No.gxyq2018048)
文摘Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel potential profile by solving the Poisson equation with the Landau-Khalatnikov（LK） equation. Moreover, the effects of the channel mobile charges on the potential are also taken into account. We also analyze the dependences of the channel potential and the on-state current on the device parameters by changing the thickness of ferroelectric layer,ferroelectric material and also verify the simulation results accord with commercial TCAD. The results show that the device can obtain better characteristics when the thickness of the ferroelectric layer is larger as it can reduce the shortest tunneling length.
