BaTiO3 films were prepared by microarc oxidation (MAO) with an in-house built alternating current (AC) power supply in Ba(OH)2 solution in this study. The surface morphology, combinability with the substrate and phase...BaTiO3 films were prepared by microarc oxidation (MAO) with an in-house built alternating current (AC) power supply in Ba(OH)2 solution in this study. The surface morphology, combinability with the substrate and phase composition of the films were investigated by XRD, SEM and TEM. The BaTiO3 films were annealed at a temperature range of 900 to 1200℃ and phase compositions were tested thereafter. The results showed that the BaTiO3 films were mainly composed of the primitive hexagonal phase with relatively small amount of tetragonal and amorphous phases. Moreover, the amount of amorphous phase decreased with the time of annealing. The transformation of BaTiO3 from hexagonal structure to tetragonal stucture became obvious until the annealing temperature reached 1200℃. The film consisted mainly of BaTiO3 tetragonal structure with ferroelectric property. The influence of annealing on surface morphology and mechanism of phase transformation of the films were also discussed.展开更多
Intelligent robots have assisted mankind in achieving and operating thousands of functions,especially with the arrival of the artificial intelligent.However,heat dissipation and thermal management in the intelligent r...Intelligent robots have assisted mankind in achieving and operating thousands of functions,especially with the arrival of the artificial intelligent.However,heat dissipation and thermal management in the intelligent robots remain big challenges,which limit their miniaturization and performance.Electrocaloric(EC)materials,which exhibit temperature change in response to the application or withdrawal of an electric field,open a new strategy for cooling technology and have gained a flurry of research interest in recent years.Toward artificial intelligent self-cooling electronic skins,large-scale flexible materials with high EC effect near room temperature are in demand.Here,we report a large room temperature EC effect in flexible Pb_(0.82)Ba_(0.08)La_(0.1)Zr0.9Ti_(0.1)O_(3)(PBLZT)inorganic thin films via a transfer-free cost-effective sol-gel process,assisted by unique two-dimensional mica substrates.The maximum adiabatic temperature change and isothermal entropy change of the flexible PBLZT thin films reach to 22.5 K and 25.9 J K^(-1) kg^(-1) at room temperature.In particular,the flexible PBLZT thin films exhibit a stable EC effect both under bending state and after bending for 20000 times.Our flexible EC materials offer an alternative strategy to the development of cooling technologies for both artificial intelligent robots and personal wearable cooling devices.展开更多
BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric p...BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric properties.Herein,the sol-gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates,and the effects of the substitution of the elements Co,Cu,Mn(B-site)and Sm,Eu,La(A-site)on the crystal structure,ferroelectricity,and leakage current of the BFO-based thin films were invest-igated.Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films.Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure,while La is biased toward pseudo-tet-ragonal.Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180°can be realized through the prepared films.The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows:Cu>Co>Mn(B-site),Sm>La>Eu(A-site).The current density voltage curves indicated that the order for leakage contribution is as follows:Mn<Cu<Co(B-site),La<Eu<Sm(A-site).Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains,and the grain size distribution statistics proved that La element promotes the reduction of grain size,leading to the increase of grain boundaries and the reduction of leakage.Finally,a Bi_(0.985)Sm_(0.045)La_(0.03)Fe_(0.96)Co_(0.02)Cu_(0.02)O_(3)(SmLa-CoCu)thin film with a qualitative leap in the remnant polarization from 25.5(Bi_(0.985)Sm_(0.075)FeO_(3))to 98.8µC/cm^(2)(SmLa-CoCu)was prepared through the syner-gistic action of Sm,La,Co,and Cu elements.The leakage current is also drastically reduced from 160 to 8.4 mA/cm^(2)at a field strength of 150 kV/cm.Thus,based on the increasing entropy strategy of chemical engineering,this study focuses on enhancing ferroelectricity and 展开更多
Ferroelectric(FE)thin films have recently attracted renewed interest in research due to their great potential for designing novel tunable electromagnetic devices such as large intelligent surfaces(LISs).However,the me...Ferroelectric(FE)thin films have recently attracted renewed interest in research due to their great potential for designing novel tunable electromagnetic devices such as large intelligent surfaces(LISs).However,the mechanism of how a polar structure in the FE thin films contributes to desired tunable performance,especially within the microwave frequency range,which is the most widely used frequency range of electromagnetics,has not been illustrated clearly.In this paper,we described several straightforward and cost-effective methods to fabricate and characterize Ba_(0.6)Sr_(0.4)TiO_(3)(BST)thin films at microwave frequencies.The prepared BST thin films here exhibit homogenous structures and great tunability(h)in a wide frequency and temperature range when the applied field is in the out-of-plane direction.The high tunability can be attributed to high concentration of polar nanoclusters.Their response to the applied direct current(DC)field was directly visualized using a novel non-destructive near-field scanning microwave microscopy(NSMM)technique.Our results have provided some intriguing insights into the application of the FE thin films for future programmable high-frequency devices and systems.展开更多
Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode ...Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.展开更多
基金Supported by Guangdong Natural Science Foundation (Grant No. 0500649)
文摘BaTiO3 films were prepared by microarc oxidation (MAO) with an in-house built alternating current (AC) power supply in Ba(OH)2 solution in this study. The surface morphology, combinability with the substrate and phase composition of the films were investigated by XRD, SEM and TEM. The BaTiO3 films were annealed at a temperature range of 900 to 1200℃ and phase compositions were tested thereafter. The results showed that the BaTiO3 films were mainly composed of the primitive hexagonal phase with relatively small amount of tetragonal and amorphous phases. Moreover, the amount of amorphous phase decreased with the time of annealing. The transformation of BaTiO3 from hexagonal structure to tetragonal stucture became obvious until the annealing temperature reached 1200℃. The film consisted mainly of BaTiO3 tetragonal structure with ferroelectric property. The influence of annealing on surface morphology and mechanism of phase transformation of the films were also discussed.
基金the National Natural Science Foundation of China(51602156,51790492 and 11874032)the Natural Science Foundation of Jiangsu Province,China(BK20160824)the Fundamental Research Funds for the Central Universities(30916011208 and 30916011104).
文摘Intelligent robots have assisted mankind in achieving and operating thousands of functions,especially with the arrival of the artificial intelligent.However,heat dissipation and thermal management in the intelligent robots remain big challenges,which limit their miniaturization and performance.Electrocaloric(EC)materials,which exhibit temperature change in response to the application or withdrawal of an electric field,open a new strategy for cooling technology and have gained a flurry of research interest in recent years.Toward artificial intelligent self-cooling electronic skins,large-scale flexible materials with high EC effect near room temperature are in demand.Here,we report a large room temperature EC effect in flexible Pb_(0.82)Ba_(0.08)La_(0.1)Zr0.9Ti_(0.1)O_(3)(PBLZT)inorganic thin films via a transfer-free cost-effective sol-gel process,assisted by unique two-dimensional mica substrates.The maximum adiabatic temperature change and isothermal entropy change of the flexible PBLZT thin films reach to 22.5 K and 25.9 J K^(-1) kg^(-1) at room temperature.In particular,the flexible PBLZT thin films exhibit a stable EC effect both under bending state and after bending for 20000 times.Our flexible EC materials offer an alternative strategy to the development of cooling technologies for both artificial intelligent robots and personal wearable cooling devices.
基金supported by the National Natural Science Foundation of China(No.22371013)the National Key Research and Development Program of China(No.2018YFA0703700)+3 种基金the Fundamental Research Funds for the Central Universities,China(Nos.FRF-IDRY-19-007 and FRF-TP-19-055A2Z)the National Program for Support of Top-notch Young Professionals,Chinathe Young Elite Scientists Sponsorship Program by the China Association for Science and Technology(CAST),China(No.2019-2021 QNRC)the“Xiaomi Young Scholar”Funding Project,China.
文摘BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric properties.Herein,the sol-gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates,and the effects of the substitution of the elements Co,Cu,Mn(B-site)and Sm,Eu,La(A-site)on the crystal structure,ferroelectricity,and leakage current of the BFO-based thin films were invest-igated.Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films.Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure,while La is biased toward pseudo-tet-ragonal.Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180°can be realized through the prepared films.The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows:Cu>Co>Mn(B-site),Sm>La>Eu(A-site).The current density voltage curves indicated that the order for leakage contribution is as follows:Mn<Cu<Co(B-site),La<Eu<Sm(A-site).Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains,and the grain size distribution statistics proved that La element promotes the reduction of grain size,leading to the increase of grain boundaries and the reduction of leakage.Finally,a Bi_(0.985)Sm_(0.045)La_(0.03)Fe_(0.96)Co_(0.02)Cu_(0.02)O_(3)(SmLa-CoCu)thin film with a qualitative leap in the remnant polarization from 25.5(Bi_(0.985)Sm_(0.075)FeO_(3))to 98.8µC/cm^(2)(SmLa-CoCu)was prepared through the syner-gistic action of Sm,La,Co,and Cu elements.The leakage current is also drastically reduced from 160 to 8.4 mA/cm^(2)at a field strength of 150 kV/cm.Thus,based on the increasing entropy strategy of chemical engineering,this study focuses on enhancing ferroelectricity and
基金This work was supported by the“Software Defined Materials for Dynamic Control of Electromagnetic Waves”(ANIMATE)Project(QinetiQ IRAD Grant No.41025673 and EPSRC Grant No.EP/R035393/1),and the authors acknowledge QinetiQ and Engineering and Physical Sciences Research Council(EPSRC).Hanchi Ruan acknowledges EPSRC for funding the Ph.D.studentship.
文摘Ferroelectric(FE)thin films have recently attracted renewed interest in research due to their great potential for designing novel tunable electromagnetic devices such as large intelligent surfaces(LISs).However,the mechanism of how a polar structure in the FE thin films contributes to desired tunable performance,especially within the microwave frequency range,which is the most widely used frequency range of electromagnetics,has not been illustrated clearly.In this paper,we described several straightforward and cost-effective methods to fabricate and characterize Ba_(0.6)Sr_(0.4)TiO_(3)(BST)thin films at microwave frequencies.The prepared BST thin films here exhibit homogenous structures and great tunability(h)in a wide frequency and temperature range when the applied field is in the out-of-plane direction.The high tunability can be attributed to high concentration of polar nanoclusters.Their response to the applied direct current(DC)field was directly visualized using a novel non-destructive near-field scanning microwave microscopy(NSMM)technique.Our results have provided some intriguing insights into the application of the FE thin films for future programmable high-frequency devices and systems.
基金supported by the National Natural Science Foundation of China (Grant No. 50872075)the Natural Science Foundation of Shandong Province,China(Grant No. Y2007F36)
文摘Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.
