期刊文献+
共找到14篇文章
< 1 >
每页显示 20 50 100
P掺杂β-FeSi_(2)材料的制备与热电输运性能
1
作者 程俊 张家伟 +2 位作者 仇鹏飞 陈立东 史迅 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2024年第8期895-902,I0003,共9页
β-FeSi_(2)作为一种绿色环保、高温抗氧化的热电材料,在工业余热回收领域具有潜在的应用价值。虽然磷(P)是一种理想的β-FeSi_(2)硅(Si)位的n型掺杂元素,但是P掺杂β-FeSi_(2)易出现第二相,从而限制了其热电性能的提升。本研究采用感... β-FeSi_(2)作为一种绿色环保、高温抗氧化的热电材料,在工业余热回收领域具有潜在的应用价值。虽然磷(P)是一种理想的β-FeSi_(2)硅(Si)位的n型掺杂元素,但是P掺杂β-FeSi_(2)易出现第二相,从而限制了其热电性能的提升。本研究采用感应熔炼法合成了一系列FeSi_(2)-xPx(x=0,0.02,0.04,0.06)样品,极大程度地避免了第二相的产生,并系统研究了P掺杂对β-FeSi_(2)热电输运性能的影响。结果表明,P在β-FeSi_(2)中的掺杂极限约为0.04,与前期的理论缺陷计算结果相符。此外,P掺杂优化了β-FeSi_(2)的热电性能,在850 K时,FeSi1.96P0.04的最高热电优值ZT约为0.12,远高于已有的研究结果(673 K,最高ZT仅为0.03)。然而,与同为n型Co和Ir掺杂的β-FeSi_(2)相比(其载流子浓度可达10^(22)cm^(-3)),P掺杂β-FeSi_(2)的载流子浓度较低,最高仅为10^(20)cm^(-3),这导致其电声散射效应较弱,从而限制了整体热电性能的提升。若能提高其载流子浓度,则热电性能有望得到进一步提升。 展开更多
关键词 β-FeSi_(2) 热电材料 P掺杂 感应熔炼 载流子浓度 电声散射
下载PDF
La_(0.67)Sr_xMnO_(3-δ)的制备及表征 被引量:3
2
作者 周圣明 李爱侠 +3 位作者 刘艳美 汪洪 吴桂芳 赵宗彦 《安徽大学学报(自然科学版)》 CAS 2000年第2期61-64,共4页
利用固态反应法制得名义组份为La0 .67SrxMnO3-δ(x=0 .33,0 .2 8,0 .2 3,0 .1 8和 0 .1 3)的多晶样品。X射线衍射表明当 0 .1 8≤x≤ 0 .33时样品是单相的钙钛矿型结构 ,这表明A位可以存在较多的空位。红外吸收光谱显示 ,随着A位空位增... 利用固态反应法制得名义组份为La0 .67SrxMnO3-δ(x=0 .33,0 .2 8,0 .2 3,0 .1 8和 0 .1 3)的多晶样品。X射线衍射表明当 0 .1 8≤x≤ 0 .33时样品是单相的钙钛矿型结构 ,这表明A位可以存在较多的空位。红外吸收光谱显示 ,随着A位空位增多 ,MnO6 八面体基团的伸缩振动模 (波数约为 60 0cm- 1 )的红外活性增强 ,同时电声子散射也随之增强。 展开更多
关键词 电声子散射 钙钛矿型结构 LAMNO3 巨磁电阻材料
下载PDF
因瓦效应与中子散射 被引量:2
3
作者 鲜于泽 卢志超 《东北大学学报(自然科学版)》 EI CAS CSCD 1995年第3期328-332,共5页
概述了作者十几年来用非弹性中子散射和光电子能谱等方法在非晶态因瓦合金的自旋波动力学、晶格动力学和电子结构方面所进行的实验研究.基于实验事实,提出了统一解释因瓦效应的电子-声子相互作用机制.以此展示中子散射等近代物理实... 概述了作者十几年来用非弹性中子散射和光电子能谱等方法在非晶态因瓦合金的自旋波动力学、晶格动力学和电子结构方面所进行的实验研究.基于实验事实,提出了统一解释因瓦效应的电子-声子相互作用机制.以此展示中子散射等近代物理实验方法在凝聚态物理研究中的重要地位. 展开更多
关键词 因瓦效应 自旋波动力学 铁磁合金 中子散射
下载PDF
强场下界面声子的增益 被引量:1
4
作者 冯澎 陈难先 《北京科技大学学报》 EI CAS CSCD 北大核心 1992年第3期393-398,共6页
首次讨论了强场下界面声子的增益。依据局域界面声子模的基本特征,即随离开界面距离,原子振幅呈衰减形式,用二次量子化方法,给出了声子数变化率的具体表达式。研究结果表明:当平行于界面的波矢超过衰减常数,场强超过某一阈值时,界面光... 首次讨论了强场下界面声子的增益。依据局域界面声子模的基本特征,即随离开界面距离,原子振幅呈衰减形式,用二次量子化方法,给出了声子数变化率的具体表达式。研究结果表明:当平行于界面的波矢超过衰减常数,场强超过某一阈值时,界面光学声子数随时间指数增加。还对场强阈值及所需激光器功率密度进行了估计,同时讨论了可能的应用。 展开更多
关键词 界面声子 声子增益 强场
下载PDF
纤锌矿氮化镓基阶梯量子阱中界面声子的色散谱与散射率 被引量:1
5
作者 张立 《光散射学报》 北大核心 2016年第2期131-139,共9页
本文理论分析了纤锌矿GaN-基阶梯量子阱中的电子-界面光学声子散射性质。阶梯量子阱中的解析的界面声子态及Frhlich电子-声子相互作用哈密顿被导出了。在考虑强内建电场效应及能带的非抛物性特性的情况下,阶梯量子阱结构精确解析的电... 本文理论分析了纤锌矿GaN-基阶梯量子阱中的电子-界面光学声子散射性质。阶梯量子阱中的解析的界面声子态及Frhlich电子-声子相互作用哈密顿被导出了。在考虑强内建电场效应及能带的非抛物性特性的情况下,阶梯量子阱结构精确解析的电子本征态也被给出了。以一个四层纤锌矿AlN-基阶梯量子阱为例进行了数值计算。结果发现,系统中存在四支界面光学声子模,这一观察明显不同于对称的GaN/AlN单量子阱与双量子阱的情况。这一差异被归结为阶梯量子结构的非对称性。GaN-基阶梯量子阱中的子带内散射率与子带间散射率比GaAs-基阶梯量子阱的结果大一个数量级,这被归因于GaN-基晶体大的电子-声子耦合常数。GaN-基阶梯量子阱的子带内散射率表现出与GaAs-基体系类似的结构参数依赖关系,但两类体系的子带间散射率对阶梯量子阱结构参数依赖则明显不同,这被归结为GaN-基阶梯量子阱结构中强的内建电场效应及带的非抛物性。结果还表明,高频界面声子模相对于低频界面声子模,对散射率的贡献更大。 展开更多
关键词 电子-声子散射率 界面声子模 纤锌矿阶梯量子阱 内建电场 带非抛物性
下载PDF
Detailed electronic structure of three-dimensional Fermi surface and its sensitivity to charge density wave transition in ZrTe3 revealed by high resolution laser-based angle-resolved photoemission spectroscopy
6
作者 Shou-Peng Lyu Li Yu +9 位作者 Jian-Wei Huang Cheng-Tian Lin Qiang Gao Jing Liu Guo-Dong Liu Lin Zhao Jie Yuan Chuang-Tian Chen Zu-Yan Xu Xing-Jiang Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期535-542,共8页
The detailed information of the electronic structure is the key to understanding the nature of charge density wave (CDW) order and its relationship with superconducting order in the microscopic level. In this paper,... The detailed information of the electronic structure is the key to understanding the nature of charge density wave (CDW) order and its relationship with superconducting order in the microscopic level. In this paper, we present a high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) study on the three-dimensional (3D) hole-like Fermi surface around the Brillouin zone center in a prototypical quasi-one-dimensional CDW and superconducting system ZrTe3. Double Fermi surface sheets are clearly resolved for the 3D hole-like Fermi surface around the zone center. The 3D Fermi surface shows a pronounced shrinking with increasing temperature. In particular, the quasiparticle scattering rate along the 3D Fermi surface experiences an anomaly near the charge density wave transition temperature of ZrTe3 - 63 K). The signature of electron-phonon coupling is observed with a dispersion kink at -20 meV; the strength of the electron-phonon coupling around the 3D Fermi surface is rather weak. These results indicate that the 3D Fermi surface is also closely connected to the charge-density-wave transition and suggest a more global impact on the entire electronic structure induced by the CDW phase transition in ZrTe3. 展开更多
关键词 angle-resolved photoemission spectroscopy ZrTe3 scattering rate electron-phonon coupling
下载PDF
Polarized spin transport in mesoscopic quantum rings with electron phonon and Rashba spin-orbit coupling
7
作者 刘平 熊诗杰 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第12期5414-5419,共6页
The influence of electron-phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin-orbit (SO) interaction is numerically investigated. There are three leads connecting ... The influence of electron-phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin-orbit (SO) interaction is numerically investigated. There are three leads connecting to the ring at different positionsl unpolarized current is injected to one of them, and the other two are output channels with different bias voltages. The spin polarization of current in the outgoing leads shows oscillations as a function of EP coupling strength owing to the quantum interference of EP states in the ring region. As temperature increases, the oscillations are evidently suppressed, implying decoherence of the EP states. The simulation shows that the magnitude of polarized current is sensitive to the location of the lead. The polarized current depends on the connecting position of the lead in a complicated way due to the spin-sensitive quantum interference effects caused by different phases accumulated by transmitting electrons with opposite spin states along different paths. 展开更多
关键词 electron-phonon scattering Rashba spin-orbit coupling mesoscopic ring spin polarized transport
下载PDF
Electron-phonon coupling in cuprate and iron-based superconductors revealed by Raman scattering
8
作者 张安民 张清明 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第8期51-62,共12页
Electron-phonon coupling (EPC) in cuprate and iron-based superconducting systems, as revealed by Raman scat- tering, is briefly reviewed. We introduce how to extract the coupling information through phonon lineshape... Electron-phonon coupling (EPC) in cuprate and iron-based superconducting systems, as revealed by Raman scat- tering, is briefly reviewed. We introduce how to extract the coupling information through phonon lineshape. Then we discuss the strength of EPC in different high-temperature superconductor (HTSC) systems and possible factors affecting the strength. A comparative study between Raman phonon theories and experiments allows us to gain insight into some crucial electronic properties, especially superconductivity. Finally, we summarize and compare EPC in the two existing HTSC systems, and discuss what role it may play in the HTSC. 展开更多
关键词 electron-phonon coupling cuprate and iron-based superconducting systems Raman scattering high-temperature superconductor
下载PDF
Detection of electron-phonon coupling in two-dimensional materials by light scattering 被引量:1
9
作者 Jia-Min Lai Ya-Ru Xie Jun Zhang 《Nano Research》 SCIE EI CAS CSCD 2021年第6期1711-1733,共23页
Electron-phonon coupling affects the properties of two-dimensional(2D)materials significantly,leading to a series of novel phenomena.Inelastic light scattering provides a powerful experimental tool to explore electron... Electron-phonon coupling affects the properties of two-dimensional(2D)materials significantly,leading to a series of novel phenomena.Inelastic light scattering provides a powerful experimental tool to explore electron-phonon interaction in 2D materials.This review gives an overview of the basic theory and experimental advances of electron-phonon coupling in 2D materials detected by Raman and Brillouin scattering,respectively.In the Raman scattering part,we review Raman spectroscopy studies of electron-phonon coupling in graphene,transition metal disulfide compounds,van der Waals heterostructures,strongly correlated systems,and 2D magnetic materials.In the Brillouin scattering part,we extensively introduce Brillouin spectroscopy in non-van der Waals 2D structures,including temperature sensors for phonons and magnons,interfacial Dzyaloshinsky-Moriya interaction and spin torque in multilayer magnetic structures,as well as exciton-polariton in semiconductor quantum well. 展开更多
关键词 electron-phonon coupling Raman scattering Brillouin scattering two-dimensional(2D)materials
原文传递
Improved Ligand-Field Theoretical Calculations of R-Line Thermal Broadenings of MgO:Cr^(3+) and MgO:V^(2+)
10
作者 ZHANG Zheng-Jie MA Dong-Ping 《Communications in Theoretical Physics》 SCIE CAS CSCD 2008年第11期1245-1248,共4页
With the values of parameters obtained from improved ligand-field theory,by taking into account all theirreducible representations and their components in EPI as well as all the levels and the admixtures of basic wave... With the values of parameters obtained from improved ligand-field theory,by taking into account all theirreducible representations and their components in EPI as well as all the levels and the admixtures of basic wavefunc-tions within d^3 electronic configuration,the R-line thermal broadenings(TB)of both MgO:Cr^(3+)and MgO:V^(2+)havemicroscopic-theoretically been calculated.The results are in very good agreement with the experimental data.It is foundthat the R-line TB of MgO:Cr^(3+)or MgO:V^(2+)comes from the first-order term of EPI.The elastic Raman scattering ofacoustic phonons plays a dominant role in R-line TB of MgO:Cr^(3+)or MgO:V^(2+). 展开更多
关键词 improved ligand-field theory electron-phonon interaction R line thermal broadening elastic Raman scattering
下载PDF
Applications of Huang–Rhys theory in semiconductor optical spectroscopy 被引量:2
11
作者 Yong Zhang 《Journal of Semiconductors》 EI CAS CSCD 2019年第9期32-40,共9页
A brief review of Huang–Rhys theory and Albrechtos theory is provided,and their connection and applications are discussed.The former is a first order perturbative theory on optical transitions intended for applicatio... A brief review of Huang–Rhys theory and Albrechtos theory is provided,and their connection and applications are discussed.The former is a first order perturbative theory on optical transitions intended for applications such as absorption and emission involving localized defect or impurity centers,emphasizing lattice relaxation or mixing of vibrational states due to electron–phonon coupling.The coupling strength is described by the Huang–Rhys factor.The latter theory is a second order perturbative theory on optical transitions intended for Raman scattering,and can in-principle include electron–phonon coupling in both electronic states and vibrational states.These two theories can potentially be connected through the common effect of lattice relaxation – non-orthonormal vibrational states associated with different electronic states.Because of this perceived connection,the latter theory is often used to explain resonant Raman scattering of LO phonons in bulk semiconductors and further used to describe the size dependence of electron–phonon coupling or Huang–Rhys factor in semiconductor nanostructures.Specifically,the A term in Albrechtos theory is often invoked to describe the multi-LO-phonon resonant Raman peaks in both bulk and nanostructured semiconductors in the literature,due to the misconception that a free-exciton could have a strong lattice relaxation.Without lattice relaxation,the A term will give rise to Rayleigh or elastic scattering.Lattice relaxation is only significant for highly localized defect or impurity states,and should be practically zero for either single particle states or free exciton states in a bulk semiconductor or for confined states in a semiconductor nanostructure that is not extremely small. 展开更多
关键词 Huang–Rhys factor electronphonon coupling SEMICONDUCTOR OPTICAL SPECTROSCOPY resonant RAMAN scattering
下载PDF
Effect of CC Coherent Vibration on Relative Raman Scattering Cross Sections of All-trans β-Carotene
12
作者 LI Zhan-long LI Dong-fei +4 位作者 SUN Cheng-lin LI Zuo-wei ZHOU Qiang CAO Jun-sheng GAO Feng-li 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2010年第4期608-611,共4页
We have determined the Raman scattering cross sections(RSCSs) of fl-carotene for C=C and C-C stretching modes, with the 1444 cm^-1 Raman band of cyclohexane as internal standard, in different solvents at low concent... We have determined the Raman scattering cross sections(RSCSs) of fl-carotene for C=C and C-C stretching modes, with the 1444 cm^-1 Raman band of cyclohexane as internal standard, in different solvents at low concentrations by measuring Raman intensity. The results show that RSCSs of β-carotene were 10^6-10^7 times larger than the general RSCSs, we analyzed that this enhancement was caused not only by the resonance Raman effect but also by nonlinear coherent CC vibration in aqueous β-carotene. Moreover, overtone and combinations of it were also observed and their intensities were 10%-20% of those of their fundamentals when β-carotene was dissolved in non-polar solvents, respectively. 展开更多
关键词 Raman scattering cross section electron-phonon coupling Coherent vibration
下载PDF
Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor
13
作者 Pushpendra Tripathi Syed Sikandar Zulqarnyn Ashraf +1 位作者 Syed Tahir Hasan Ami Chand Sharma 《World Journal of Condensed Matter Physics》 2012年第1期42-46,共5页
We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of t... We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result. 展开更多
关键词 electron-phonon scattering Rate Dynamic SCREENING Deformation Potential
下载PDF
La_(2-x)Sr_xCuO_4等大温区线性电阻率与带间空穴-声子散射
14
作者 毛善成 《沈阳大学学报(自然科学版)》 CAS 2018年第4期268-272,共5页
为了研究La_(2-x)Sr_xCuO_4等大温区铜氧面线性电阻率-温度线性依赖提出了带间电-声散射概念.利用极性晶体中慢电子的运动规律推导了高温超导材料费米面上电子-声子相互作用的状态方程,再利用索末菲电阻率公式计算出线性电阻率随温度上... 为了研究La_(2-x)Sr_xCuO_4等大温区铜氧面线性电阻率-温度线性依赖提出了带间电-声散射概念.利用极性晶体中慢电子的运动规律推导了高温超导材料费米面上电子-声子相互作用的状态方程,再利用索末菲电阻率公式计算出线性电阻率随温度上升的比例系数为0.4(μΩ·cm)·K-1,与实验测得的结果(0.4~0.5)(μΩ·cm)·K-1基本一致.高温超导材料的线性电阻率、电子自由程不随温度变化的原因用带间电-声散射概念来解释是比较合理的.高温超导材料的其他奇特性质:宽的中红外吸收峰、延伸到约1eV的拉曼光谱背景散射等也与高能带和低能带间的能量差有关. 展开更多
关键词 带间电-声散射 高温超导体 中红外吸收峰 拉曼散射 反常电阻率
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部