The detailed information of the electronic structure is the key to understanding the nature of charge density wave (CDW) order and its relationship with superconducting order in the microscopic level. In this paper,...The detailed information of the electronic structure is the key to understanding the nature of charge density wave (CDW) order and its relationship with superconducting order in the microscopic level. In this paper, we present a high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) study on the three-dimensional (3D) hole-like Fermi surface around the Brillouin zone center in a prototypical quasi-one-dimensional CDW and superconducting system ZrTe3. Double Fermi surface sheets are clearly resolved for the 3D hole-like Fermi surface around the zone center. The 3D Fermi surface shows a pronounced shrinking with increasing temperature. In particular, the quasiparticle scattering rate along the 3D Fermi surface experiences an anomaly near the charge density wave transition temperature of ZrTe3 - 63 K). The signature of electron-phonon coupling is observed with a dispersion kink at -20 meV; the strength of the electron-phonon coupling around the 3D Fermi surface is rather weak. These results indicate that the 3D Fermi surface is also closely connected to the charge-density-wave transition and suggest a more global impact on the entire electronic structure induced by the CDW phase transition in ZrTe3.展开更多
The influence of electron-phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin-orbit (SO) interaction is numerically investigated. There are three leads connecting ...The influence of electron-phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin-orbit (SO) interaction is numerically investigated. There are three leads connecting to the ring at different positionsl unpolarized current is injected to one of them, and the other two are output channels with different bias voltages. The spin polarization of current in the outgoing leads shows oscillations as a function of EP coupling strength owing to the quantum interference of EP states in the ring region. As temperature increases, the oscillations are evidently suppressed, implying decoherence of the EP states. The simulation shows that the magnitude of polarized current is sensitive to the location of the lead. The polarized current depends on the connecting position of the lead in a complicated way due to the spin-sensitive quantum interference effects caused by different phases accumulated by transmitting electrons with opposite spin states along different paths.展开更多
Electron-phonon coupling (EPC) in cuprate and iron-based superconducting systems, as revealed by Raman scat- tering, is briefly reviewed. We introduce how to extract the coupling information through phonon lineshape...Electron-phonon coupling (EPC) in cuprate and iron-based superconducting systems, as revealed by Raman scat- tering, is briefly reviewed. We introduce how to extract the coupling information through phonon lineshape. Then we discuss the strength of EPC in different high-temperature superconductor (HTSC) systems and possible factors affecting the strength. A comparative study between Raman phonon theories and experiments allows us to gain insight into some crucial electronic properties, especially superconductivity. Finally, we summarize and compare EPC in the two existing HTSC systems, and discuss what role it may play in the HTSC.展开更多
Electron-phonon coupling affects the properties of two-dimensional(2D)materials significantly,leading to a series of novel phenomena.Inelastic light scattering provides a powerful experimental tool to explore electron...Electron-phonon coupling affects the properties of two-dimensional(2D)materials significantly,leading to a series of novel phenomena.Inelastic light scattering provides a powerful experimental tool to explore electron-phonon interaction in 2D materials.This review gives an overview of the basic theory and experimental advances of electron-phonon coupling in 2D materials detected by Raman and Brillouin scattering,respectively.In the Raman scattering part,we review Raman spectroscopy studies of electron-phonon coupling in graphene,transition metal disulfide compounds,van der Waals heterostructures,strongly correlated systems,and 2D magnetic materials.In the Brillouin scattering part,we extensively introduce Brillouin spectroscopy in non-van der Waals 2D structures,including temperature sensors for phonons and magnons,interfacial Dzyaloshinsky-Moriya interaction and spin torque in multilayer magnetic structures,as well as exciton-polariton in semiconductor quantum well.展开更多
With the values of parameters obtained from improved ligand-field theory,by taking into account all theirreducible representations and their components in EPI as well as all the levels and the admixtures of basic wave...With the values of parameters obtained from improved ligand-field theory,by taking into account all theirreducible representations and their components in EPI as well as all the levels and the admixtures of basic wavefunc-tions within d^3 electronic configuration,the R-line thermal broadenings(TB)of both MgO:Cr^(3+)and MgO:V^(2+)havemicroscopic-theoretically been calculated.The results are in very good agreement with the experimental data.It is foundthat the R-line TB of MgO:Cr^(3+)or MgO:V^(2+)comes from the first-order term of EPI.The elastic Raman scattering ofacoustic phonons plays a dominant role in R-line TB of MgO:Cr^(3+)or MgO:V^(2+).展开更多
A brief review of Huang–Rhys theory and Albrechtos theory is provided,and their connection and applications are discussed.The former is a first order perturbative theory on optical transitions intended for applicatio...A brief review of Huang–Rhys theory and Albrechtos theory is provided,and their connection and applications are discussed.The former is a first order perturbative theory on optical transitions intended for applications such as absorption and emission involving localized defect or impurity centers,emphasizing lattice relaxation or mixing of vibrational states due to electron–phonon coupling.The coupling strength is described by the Huang–Rhys factor.The latter theory is a second order perturbative theory on optical transitions intended for Raman scattering,and can in-principle include electron–phonon coupling in both electronic states and vibrational states.These two theories can potentially be connected through the common effect of lattice relaxation – non-orthonormal vibrational states associated with different electronic states.Because of this perceived connection,the latter theory is often used to explain resonant Raman scattering of LO phonons in bulk semiconductors and further used to describe the size dependence of electron–phonon coupling or Huang–Rhys factor in semiconductor nanostructures.Specifically,the A term in Albrechtos theory is often invoked to describe the multi-LO-phonon resonant Raman peaks in both bulk and nanostructured semiconductors in the literature,due to the misconception that a free-exciton could have a strong lattice relaxation.Without lattice relaxation,the A term will give rise to Rayleigh or elastic scattering.Lattice relaxation is only significant for highly localized defect or impurity states,and should be practically zero for either single particle states or free exciton states in a bulk semiconductor or for confined states in a semiconductor nanostructure that is not extremely small.展开更多
We have determined the Raman scattering cross sections(RSCSs) of fl-carotene for C=C and C-C stretching modes, with the 1444 cm^-1 Raman band of cyclohexane as internal standard, in different solvents at low concent...We have determined the Raman scattering cross sections(RSCSs) of fl-carotene for C=C and C-C stretching modes, with the 1444 cm^-1 Raman band of cyclohexane as internal standard, in different solvents at low concentrations by measuring Raman intensity. The results show that RSCSs of β-carotene were 10^6-10^7 times larger than the general RSCSs, we analyzed that this enhancement was caused not only by the resonance Raman effect but also by nonlinear coherent CC vibration in aqueous β-carotene. Moreover, overtone and combinations of it were also observed and their intensities were 10%-20% of those of their fundamentals when β-carotene was dissolved in non-polar solvents, respectively.展开更多
We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of t...We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2015CB921301)the National Natural Science Foundation of China(Grant Nos.11574360,11534007,and 11334010)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07020300)
文摘The detailed information of the electronic structure is the key to understanding the nature of charge density wave (CDW) order and its relationship with superconducting order in the microscopic level. In this paper, we present a high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) study on the three-dimensional (3D) hole-like Fermi surface around the Brillouin zone center in a prototypical quasi-one-dimensional CDW and superconducting system ZrTe3. Double Fermi surface sheets are clearly resolved for the 3D hole-like Fermi surface around the zone center. The 3D Fermi surface shows a pronounced shrinking with increasing temperature. In particular, the quasiparticle scattering rate along the 3D Fermi surface experiences an anomaly near the charge density wave transition temperature of ZrTe3 - 63 K). The signature of electron-phonon coupling is observed with a dispersion kink at -20 meV; the strength of the electron-phonon coupling around the 3D Fermi surface is rather weak. These results indicate that the 3D Fermi surface is also closely connected to the charge-density-wave transition and suggest a more global impact on the entire electronic structure induced by the CDW phase transition in ZrTe3.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 10474033 and 60676056)the State Key Projects of Basic Research of China (Grant Nos 2006CB0L1000 and 2005CB623605)
文摘The influence of electron-phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin-orbit (SO) interaction is numerically investigated. There are three leads connecting to the ring at different positionsl unpolarized current is injected to one of them, and the other two are output channels with different bias voltages. The spin polarization of current in the outgoing leads shows oscillations as a function of EP coupling strength owing to the quantum interference of EP states in the ring region. As temperature increases, the oscillations are evidently suppressed, implying decoherence of the EP states. The simulation shows that the magnitude of polarized current is sensitive to the location of the lead. The polarized current depends on the connecting position of the lead in a complicated way due to the spin-sensitive quantum interference effects caused by different phases accumulated by transmitting electrons with opposite spin states along different paths.
基金supported by the National Basic Research Program of China(Grant Nos.2011CBA00112 and 2012CB921701)
文摘Electron-phonon coupling (EPC) in cuprate and iron-based superconducting systems, as revealed by Raman scat- tering, is briefly reviewed. We introduce how to extract the coupling information through phonon lineshape. Then we discuss the strength of EPC in different high-temperature superconductor (HTSC) systems and possible factors affecting the strength. A comparative study between Raman phonon theories and experiments allows us to gain insight into some crucial electronic properties, especially superconductivity. Finally, we summarize and compare EPC in the two existing HTSC systems, and discuss what role it may play in the HTSC.
基金J.Z.acknowledges support from Beijing Natural Science Foundation(No.JQ18014)the National Basic Research Program of China(Nos.2016YFA0301200 and 2017YFA0303401)+1 种基金Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB28000000)the National Natural Science Foundation of China(No.51527901).
文摘Electron-phonon coupling affects the properties of two-dimensional(2D)materials significantly,leading to a series of novel phenomena.Inelastic light scattering provides a powerful experimental tool to explore electron-phonon interaction in 2D materials.This review gives an overview of the basic theory and experimental advances of electron-phonon coupling in 2D materials detected by Raman and Brillouin scattering,respectively.In the Raman scattering part,we review Raman spectroscopy studies of electron-phonon coupling in graphene,transition metal disulfide compounds,van der Waals heterostructures,strongly correlated systems,and 2D magnetic materials.In the Brillouin scattering part,we extensively introduce Brillouin spectroscopy in non-van der Waals 2D structures,including temperature sensors for phonons and magnons,interfacial Dzyaloshinsky-Moriya interaction and spin torque in multilayer magnetic structures,as well as exciton-polariton in semiconductor quantum well.
基金supported partially by National Natural Science Foundation of China under Grant No.40841012
文摘With the values of parameters obtained from improved ligand-field theory,by taking into account all theirreducible representations and their components in EPI as well as all the levels and the admixtures of basic wavefunc-tions within d^3 electronic configuration,the R-line thermal broadenings(TB)of both MgO:Cr^(3+)and MgO:V^(2+)havemicroscopic-theoretically been calculated.The results are in very good agreement with the experimental data.It is foundthat the R-line TB of MgO:Cr^(3+)or MgO:V^(2+)comes from the first-order term of EPI.The elastic Raman scattering ofacoustic phonons plays a dominant role in R-line TB of MgO:Cr^(3+)or MgO:V^(2+).
文摘A brief review of Huang–Rhys theory and Albrechtos theory is provided,and their connection and applications are discussed.The former is a first order perturbative theory on optical transitions intended for applications such as absorption and emission involving localized defect or impurity centers,emphasizing lattice relaxation or mixing of vibrational states due to electron–phonon coupling.The coupling strength is described by the Huang–Rhys factor.The latter theory is a second order perturbative theory on optical transitions intended for Raman scattering,and can in-principle include electron–phonon coupling in both electronic states and vibrational states.These two theories can potentially be connected through the common effect of lattice relaxation – non-orthonormal vibrational states associated with different electronic states.Because of this perceived connection,the latter theory is often used to explain resonant Raman scattering of LO phonons in bulk semiconductors and further used to describe the size dependence of electron–phonon coupling or Huang–Rhys factor in semiconductor nanostructures.Specifically,the A term in Albrechtos theory is often invoked to describe the multi-LO-phonon resonant Raman peaks in both bulk and nanostructured semiconductors in the literature,due to the misconception that a free-exciton could have a strong lattice relaxation.Without lattice relaxation,the A term will give rise to Rayleigh or elastic scattering.Lattice relaxation is only significant for highly localized defect or impurity states,and should be practically zero for either single particle states or free exciton states in a bulk semiconductor or for confined states in a semiconductor nanostructure that is not extremely small.
基金Supported by the National Natural Science Foundation of China(No.10774057)the Foundation of Jilin Provincial Science & Technology Department,China(No.20090534)the Opened Fund of State Key Laboratory of Integrated Optoelectronics, China(No.IOSKL-KF200908)
文摘We have determined the Raman scattering cross sections(RSCSs) of fl-carotene for C=C and C-C stretching modes, with the 1444 cm^-1 Raman band of cyclohexane as internal standard, in different solvents at low concentrations by measuring Raman intensity. The results show that RSCSs of β-carotene were 10^6-10^7 times larger than the general RSCSs, we analyzed that this enhancement was caused not only by the resonance Raman effect but also by nonlinear coherent CC vibration in aqueous β-carotene. Moreover, overtone and combinations of it were also observed and their intensities were 10%-20% of those of their fundamentals when β-carotene was dissolved in non-polar solvents, respectively.
文摘We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.