The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG f...The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency- dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.展开更多
针对三维集成电路中的关键技术硅通孔的电特性,使用传输线理论提取了其单位长度RLGC参数。将硅通孔等效为传输线,利用HFSS仿真结果并结合传输线理论给出了具体的参数提取方法。计算结果表明,硅通孔单位长度RLGC参数呈现较强的频变特性,...针对三维集成电路中的关键技术硅通孔的电特性,使用传输线理论提取了其单位长度RLGC参数。将硅通孔等效为传输线,利用HFSS仿真结果并结合传输线理论给出了具体的参数提取方法。计算结果表明,硅通孔单位长度RLGC参数呈现较强的频变特性,当频率从1 MHz增加到20 GHz时,单位长度的电阻和导纳分别从0.45 mΩ/μm和2.5μS/μm增加到2.5 mΩ/μm和17μS/μm,而单位长度电感和电容分别从8.7 p H/μm和8.8 f F/μm减小至7.5 p H/μm和0.2 f F/μm。与传统的阻抗矩阵和导纳矩阵提取方法相比,该方法具有结果绝对收敛和适用频率高等诸多优点,可进一步应用于三维集成电路的仿真设计。展开更多
高压直流(high voltage direct current,HVDC)输电线路两端的平波电抗器和直流滤波器构成现实的边界元件,对暂态电压高频分量呈带阻传变特性,来自直流线路区外的高频电压信号通过平波电抗器和直流滤波器后被衰减,其能量显著减小,不同频...高压直流(high voltage direct current,HVDC)输电线路两端的平波电抗器和直流滤波器构成现实的边界元件,对暂态电压高频分量呈带阻传变特性,来自直流线路区外的高频电压信号通过平波电抗器和直流滤波器后被衰减,其能量显著减小,不同频带的高频电压信号小波能量可应用小波变换求得。利用区内、外故障时于保护安装处获得的暂态电压小波能量的显著差异来构造直流输电线路区内、外故障判据;利用故障暂态电压小波变换模极大值,构造启动判据;利用正极和负极暂态电压分别与+800和-800kV的相关系数,构造雷击干扰识别判据;利用两极线极波,构造故障选极判据。给出了特高压直流(ultra high voltage direct current,UHVDC)输电线路单端电气量暂态保护方案。对该保护进行了大量仿真分析,计及了雷击干扰、边界上避雷器动作、不同过渡电阻、换相失败故障等因素的影响。仿真结果表明,该保护具有绝对选择性,能可靠有效地保护直流线路全长。展开更多
基金Project supported by the National Defense Basic Scientific Research Program of China(No.A0320132012)
文摘The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency- dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.
文摘针对三维集成电路中的关键技术硅通孔的电特性,使用传输线理论提取了其单位长度RLGC参数。将硅通孔等效为传输线,利用HFSS仿真结果并结合传输线理论给出了具体的参数提取方法。计算结果表明,硅通孔单位长度RLGC参数呈现较强的频变特性,当频率从1 MHz增加到20 GHz时,单位长度的电阻和导纳分别从0.45 mΩ/μm和2.5μS/μm增加到2.5 mΩ/μm和17μS/μm,而单位长度电感和电容分别从8.7 p H/μm和8.8 f F/μm减小至7.5 p H/μm和0.2 f F/μm。与传统的阻抗矩阵和导纳矩阵提取方法相比,该方法具有结果绝对收敛和适用频率高等诸多优点,可进一步应用于三维集成电路的仿真设计。
文摘高压直流(high voltage direct current,HVDC)输电线路两端的平波电抗器和直流滤波器构成现实的边界元件,对暂态电压高频分量呈带阻传变特性,来自直流线路区外的高频电压信号通过平波电抗器和直流滤波器后被衰减,其能量显著减小,不同频带的高频电压信号小波能量可应用小波变换求得。利用区内、外故障时于保护安装处获得的暂态电压小波能量的显著差异来构造直流输电线路区内、外故障判据;利用故障暂态电压小波变换模极大值,构造启动判据;利用正极和负极暂态电压分别与+800和-800kV的相关系数,构造雷击干扰识别判据;利用两极线极波,构造故障选极判据。给出了特高压直流(ultra high voltage direct current,UHVDC)输电线路单端电气量暂态保护方案。对该保护进行了大量仿真分析,计及了雷击干扰、边界上避雷器动作、不同过渡电阻、换相失败故障等因素的影响。仿真结果表明,该保护具有绝对选择性,能可靠有效地保护直流线路全长。
