The developments of aeronautics and astronautics require engines of higher quality. The temperature distribution in combustion engine is highly influenced by the thermal conduct resistance. To predict the temperature ...The developments of aeronautics and astronautics require engines of higher quality. The temperature distribution in combustion engine is highly influenced by the thermal conduct resistance. To predict the temperature field of the hot-end assemblies of combustion engine, the thermal contact resistance must be considered. The object of the study is to propose a model of high application including in conditions of high temperature and high pressure. Up to date, many models and empirical or semi-empirical correlations have been developed, also researchers designed different test equipments according to specific conditions. This paper presents several representative models and test equipments, compares the merits and drawbacks with each other, and gives recommendations for further research.展开更多
The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spat...The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spatially confined GaN nanofilms. The piezoelectric constitutive relation in GaN nanofilms is taken into account in calculating the phonon dispersion relation. The modified phonon group velocity and phonon density of state as well as the phonon thermal conductivity are also obtained due to the contribution of piezoelectricity. Theoretical results show that the piezoelectricity in GaN nanofilms can change significantly the phonon properties such as the phonon group velocity and density of states, resulting in the variation of the phonon thermal conductivity of GaN nanofilms remarkably. Moreover, the piezoelectricity of GaN can modify the dependence of thermal conductivity on the geometrical size and temperature. These results can be useful in modeling the thermal performance in the active region of GaN-based electronic devices.展开更多
文摘The developments of aeronautics and astronautics require engines of higher quality. The temperature distribution in combustion engine is highly influenced by the thermal conduct resistance. To predict the temperature field of the hot-end assemblies of combustion engine, the thermal contact resistance must be considered. The object of the study is to propose a model of high application including in conditions of high temperature and high pressure. Up to date, many models and empirical or semi-empirical correlations have been developed, also researchers designed different test equipments according to specific conditions. This paper presents several representative models and test equipments, compares the merits and drawbacks with each other, and gives recommendations for further research.
基金support received from the National Natural Science Foundation of China (11472243, 11302189, 11321202)the Doctoral Fund of Ministry of Education of China (20130101120175)
文摘The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spatially confined GaN nanofilms. The piezoelectric constitutive relation in GaN nanofilms is taken into account in calculating the phonon dispersion relation. The modified phonon group velocity and phonon density of state as well as the phonon thermal conductivity are also obtained due to the contribution of piezoelectricity. Theoretical results show that the piezoelectricity in GaN nanofilms can change significantly the phonon properties such as the phonon group velocity and density of states, resulting in the variation of the phonon thermal conductivity of GaN nanofilms remarkably. Moreover, the piezoelectricity of GaN can modify the dependence of thermal conductivity on the geometrical size and temperature. These results can be useful in modeling the thermal performance in the active region of GaN-based electronic devices.
